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Perovskite solar cell based on doped NiO hole transport layer and preparation method thereof

A solar cell and perovskite technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of attenuation, material and interface degradation, battery performance, etc., and achieve high efficiency, stable properties, and improved transmittance.

Active Publication Date: 2015-11-18
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Halide perovskite materials will react with some unstable interface materials under the conditions of light, electricity and heating, resulting in the degradation of the material and the interface, which will significantly reduce the performance of the battery.

Method used

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  • Perovskite solar cell based on doped NiO hole transport layer and preparation method thereof
  • Perovskite solar cell based on doped NiO hole transport layer and preparation method thereof
  • Perovskite solar cell based on doped NiO hole transport layer and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0039] Step (1) Select FTO glass with a square resistance of 5-25Ω and a transmittance of 70-90% as the substrate, and then clean it with detergent, distilled water, ethanol and acetone.

[0040] Step (2) Preparation of Li or Mg or Li-Mg co-doped NiO dense layer

[0041] Nickel acetylacetonate, lithium acetate or magnesium acetate is used as a source, and according to the stoichiometric ratio Ni:Li:Mg=80:5:15, it is dissolved in an acetonitrile solution with a Ni molar concentration of 0.01-0.04mol / L as a precursor solution. The conductive surface of the FTO glass is placed on a heating platform at 450-600°C, and the precursor solution is sprayed on the heated FTO substrate by atomization spraying method. Continue annealing at this temperature for 10-120 minutes after spraying. Finally, a dense layer of Li or Mg or Li-Mg co-doped NiO is deposited with a thickness of 5-50 nm. Let cool and set aside.

[0042] Step (3) perovskite film (APbX 3 , A=CH 3 NH 3 + or CH(NH 2 ) ...

Embodiment 2

[0051] Except for step two, all steps and methods are exactly the same as in the foregoing embodiment one.

[0052] Step (2) Preparation of non-doped NiO dense layer

[0053] Dissolving nickel acetylacetonate powder without Li and Mg doping raw materials in acetonitrile to obtain a precursor solution with a Ni molar concentration of 0.01-0.04mol / L. The conductive surface of the FTO glass is placed on a heating platform at 450-600°C, and the precursor solution is sprayed on the heated FTO substrate by atomization spraying method. Continue annealing at this temperature for 10-120 minutes after spraying. Finally, a non-doped NiO dense layer with a thickness of 5-50nm is deposited. Let cool and set aside.

[0054] Implementation effect: Finally, conduct a battery performance test to compare the photoelectric conversion performance of the battery; by changing the voltage scanning method, the voltage scan changes from short circuit to open circuit or from open circuit to short ci...

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Abstract

The invention discloses a trans-planar perovskite solar structure based on a doped NiO hole transport layer and a preparation method thereof, and belongs to the field of new material solar cells. The perovskite solar cell in the prior art has problems such as poor stability and poor photoelectric conversion performance. The invention provides a trans-planar perovskite solar cell based on a doped NiO hole transport layer. The preparation method of the solar cell comprises the following steps: depositing a NiO dense layer doped with Mg, Li and other hetero atoms of certain concentration on a conductive substrate as a hole transport layer; preparing a perovskite film, wherein the perovskite film is made of APbX3, A=CH3NH3+ or CH(NH2)2+ or the mixture of the two, and X=Cl-, Br- and I- or the mixture thereof; depositing an electron transport layer PCBM; depositing an interface modification layer (including one of LiF, BCP and TiOX); and finally, depositing a layer of metal electrode (Ag or Al). By using the doped NiO dense film as a hole transport layer, the cell has stable and efficient performance, and the hysteresis is small. Industrialization of the perovskite solar cell is easy to realize.

Description

technical field [0001] The invention belongs to the field of new material solar cells, and more specifically relates to a perovskite solar cell based on a doped NiO hole transport layer and a preparation method thereof. Background technique [0002] In the 21st century, the demand for energy in the economy and society is increasing, and traditional energy is increasingly unable to meet the requirements of social development due to its own limitations. As a renewable energy source, solar energy has the advantages of being inexhaustible, economical and environmentally friendly. It is an important trend in the development of new energy technology to develop solar cells, especially cheap solar cell technology, and promote photovoltaic technology to generate electricity at a par. [0003] In recent years, perovskite solar cells have been rapidly pushed up to the level of traditional crystalline silicon solar cells due to their low cost of materials, simple preparation process and...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/44H01L51/46H01L51/48
CPCH10K71/00H10K30/80H10K30/00Y02E10/549Y02P70/50
Inventor 陈炜张文君曾宪伟王欢
Owner HUAZHONG UNIV OF SCI & TECH
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