Multistage Magnetic Field Arc Ion Plating Method with Adjustable Transmission Direction
A technology of arc ion plating and transmission direction, which is applied in the field of material surface treatment, can solve the problems of low arc plasma transmission efficiency, achieve the effect of avoiding large particle defects, compact crystal structure, and eliminating application restrictions
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specific Embodiment approach 1
[0014] Specific implementation mode one: the following combination figure 1 and figure 2 Describe this embodiment, the device used in the multistage magnetic field arc ion plating method with adjustable transmission direction in this embodiment includes a bias power supply 1, an arc power supply 2, an arc ion plating target source 3, a multistage magnetic field device 4, and a multistage magnetic field power supply 5. Magnetic field device with adjustable transmission direction 6. Magnetic field power supply with adjustable transmission direction 7. Vacuum chamber 8 and sample stage 9;
[0015] The method includes the following steps:
[0016] Step 1. Place the substrate workpiece to be processed on the sample stage 9 in the vacuum chamber 8, connect the workpiece to the pulse output end of the bias power supply 1, and connect the arc ion plating target source 3 installed on the vacuum chamber 8 to the arc power supply 2 , the multistage magnetic field device 4 is connected...
specific Embodiment approach 2
[0025] Specific embodiment two: the difference between this embodiment and embodiment one is that the method also includes:
[0026] Step 3. Traditional arc ion plating, pulsed cathode arc, multi-stage magnetic field filter device and transmission direction adjustable magnetic field device can be used alone for film deposition in combination with DC bias, pulse bias or DC pulse composite bias to prepare pure metal films , compound ceramic films with different element ratios, functional films and high-quality films with nano-multilayer or gradient structures.
specific Embodiment approach 3
[0027] Embodiment 3: The difference between this embodiment and Embodiment 1 is that Steps 1 to 3 are repeated to prepare multi-layered thin films with different stress states, microstructures and element ratios. Others are the same as Embodiment 1.
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