FINFET manufacturing method

A manufacturing method and part of the technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of damage to form the dielectric characteristics of the isolation layer, and achieve the effect of solving impurities and damage and improving device performance.

Inactive Publication Date: 2015-11-25
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

This method effectively reduces the defects and impurities introduced in the channel by direct ion implantation, and improves the performance of the device. However, due to

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  • FINFET manufacturing method
  • FINFET manufacturing method
  • FINFET manufacturing method

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Embodiment Construction

[0020] In order to make the object, technical solution and advantages of the present invention clearer, the embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0021] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0022] The embodiment of the present invention provides a FINFET manufacturing method, which can effectively suppress the punch-through current without affecting other characteristics of the device. Specifically, the method includes the following steps:

[0023] a. providing a semiconductor substrate 100 on which a...

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Abstract

A FINFET manufacturing method, comprising: a. providing a semiconductor substrate, and forming a first fin on the substrate; b. covering the first fin with a mask layer; c. forming a punch-through barrier layer in the semiconductor substrate; d. etching the punch-through barrier layer and a part of the semiconductor substrate in sequence by taking the first fin and the mask layer as masks, expanding the first fin into a second fin, and removing the masks; and e. forming a trench isolation structure on the semiconductor substrate, forming a source-drain region on the second fin, and forming a gate laminate and an interlayer dielectric layer on the semiconductor substrate and the second fin. A punch-through barrier layer is formed by means of lateral scattering, and at the same time, an isolation layer is formed after the punch-through barrier layer is formed using a substrate material as a carrier of scattering impurities, thereby effectively solving the problems of impurities and damage introduced during lateral scattering, and greatly improving the performance of a device.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor device, in particular to a method for manufacturing a FINFET. technical background [0002] As the size of the semiconductor device is scaled down, there arises a problem that the threshold voltage decreases with the decrease of the channel length, that is, a short channel effect is generated in the semiconductor device. To meet the challenges from semiconductor design and manufacturing, led to the development of Fin Field Effect Transistor, or FinFET. [0003] Channel punch-through effect (Channelpunch-througheffect) is a phenomenon that the source junction and the depletion region of the drain junction of the field effect transistor are connected. When the channel is penetrated, the potential barrier between the source and the drain is significantly reduced, and a large number of carriers are injected from the source to the channel, and drift through the space charge region between ...

Claims

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Application Information

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IPC IPC(8): H01L21/336
CPCH01L29/78H01L29/66803
Inventor 刘云飞尹海洲张珂珂
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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