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chamber components

A component and chamber technology, which is applied in the field of chamber components to achieve the effects of reducing ion concentration, prolonging motion trajectory and residence time, and improving etching selectivity ratio

Active Publication Date: 2018-09-28
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Based on this, it is necessary to provide a chamber assembly for improving the etching selectivity ratio of photoresist and silicon material

Method used

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Embodiment Construction

[0026] In order to make the technical solution of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0027] see figure 2 , a chamber assembly 200, comprising a planar coil 210, a reaction chamber 220 and an air inlet assembly 230, the planar coil 210 is located at the top cover of the reaction chamber 220, and the air inlet assembly 230 is connected to the reaction chamber 220 for feeding The reaction chamber 220 is filled with gas; the initial velocity direction of the gas in the gas inlet assembly 230 passing into the reaction chamber 220 intersects with the direction of the electric field generated by the planar coil 210 .

[0028] The chamber assembly provided by the present invention prolongs the movement of ions in the reaction chamber 220 after the gas is ionized by setting the initial velocity direction of the gas in the gas inlet assembly 230 into the...

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Abstract

The invention discloses a cavity assembly which comprises a planar coil, a reaction cavity and air inlet assemblies, wherein the planar coil is placed at a cover plate at the top of the reaction cavity, the air inlet assemblies are connected with the reaction cavity, and used to fill air into the reaction cavity, and the direction of the initial velocity at which air is input into the reaction cavity via the air inlet assemblies is intersected with that of an electric field generated by the planar coil. Thus, movement track and detention time of ions in the reaction cavity after air is ionized are both increased, the concentration of ions reaching the wafer surface is reduced, and the etching selectivity ratio of photoresist and silicon material is improved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a chamber component. Background technique [0002] With the wide application of MEMS (Modern Micro Electro Mechanical System, Micro Electro Mechanical System) and MEMS devices in the field of automobiles and consumer electronics, and the broad prospects of TSV (Through Silicon Via Etching, Through Silicon Etch) technology in the future packaging field, dry The plasma silicon deep etching process has gradually become one of the most widely used processes in the field of MEMS processing and TSV technology. The main difference between the silicon deep etching process and the general silicon etching process is that the etching depth of the silicon deep etching process is much larger than that of the general silicon etching process, which requires the silicon deep etching process to have a faster Etching rate, higher selectivity and larger aspect ratio. [0003] The current mainstream ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/67B81C1/00
Inventor 谢秋实
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD