Device and method for preparing AZO transparent conducting film through magnetron sputtering

A technology of transparent conductive film and magnetron sputtering, applied in sputtering plating, ion implantation plating, metal material coating process, etc., can solve the problems of low ionization rate of argon gas, and the photoelectric performance of film formation needs to be improved. , to achieve the effect of lowering the surface barrier

Active Publication Date: 2014-02-19
(CNBM) BENGBU DESIGN & RES INST FOR GLASS IND CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Aiming at the problems that the ionization rate of argon gas is low in the existing magnetron sputtering technology and the photoelectric performance of film formation needs to be improved, the purpose of the present invention is to provide a device and method that can significantly increase the ionization rate of argon gas to achieve high-speed deposition Obtain excellent photoelectric performance while transparent conductive film

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  • Device and method for preparing AZO transparent conducting film through magnetron sputtering

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Experimental program
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Effect test

Embodiment 1

[0020] Utilize the flow control system to control the flow rate of argon to be 200 sccm, utilize the vacuum pump group to control the process pressure to be 5Pa, the voltage of the stainless steel substrate power supply 13 is 750V, and control the current through the tungsten wire to be 25A by adjusting the voltage of the tungsten wire heating power supply 11, and pass Adjust the voltage of the coil power supply 3 to control the current through the electromagnetic coil 2 to 80A, the number of turns of the electromagnetic coil 2 to 60 turns, the substrate heating temperature to 200°C, and the composition of the AZO target: ZnO: Al 2 o 3 =98%: 2% (wt.%). Under the above process parameter conditions, the sputtering time was 30 minutes, and the AZO film was prepared with a resistivity of 5×10 -4 ohm. cm, and the average transmittance in visible light wavelengths is 86%.

Embodiment 2

[0022] Utilize the flow control system to control the flow rate of argon gas to be 200 sccm, utilize the vacuum pump group to control the process pressure to be 10Pa, and the voltage of the stainless steel base power supply 13 is 800V, and the current through the tungsten wire is controlled to be 30A by adjusting the voltage of the tungsten wire heating power supply 11, and the Adjust the voltage of the coil power supply 3 to control the current through the electromagnetic coil 2 to 90A, the number of turns of the electromagnetic coil 2 to 70 turns, the substrate heating temperature to 200°C, and the composition of the AZO target: ZnO:Al 2 o 3 =98%: 2% (wt.%). Under the conditions of the above process parameters, the sputtering time was 30 minutes, and the AZO film was prepared with a resistivity of 4.7×10 -4 ohm. cm, and the average transmittance within the visible wavelength is 86.8%.

Embodiment 3

[0024] Utilize the flow control system to control the flow rate of argon to be 200 sccm, utilize the vacuum pump group to control the process pressure to be 8Pa, the voltage of the stainless steel base power supply 13 is 600V, and control the current passing through the tungsten wire to be 20A by adjusting the voltage of the tungsten wire heating power supply 11. Adjust the voltage of the coil power supply 3 to control the current through the electromagnetic coil 2 to 60A, the number of turns of the electromagnetic coil 2 to 80 turns, the substrate heating temperature to 200°C, and the composition of the AZO target: ZnO: Al 2 o 3 =98%: 2% (wt.%). Under the conditions of the above process parameters, the sputtering time was 30 minutes, and the AZO film was prepared with a resistivity of 4.7×10 -4 ohm. cm, and the average transmittance in visible light wavelengths is 87.5%.

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Abstract

The invention discloses a device and a method for preparing an AZO transparent conducting film through magnetron sputtering. An induction mode of a magnetic field in a magnetron sputtering process is changed, the magnetic field which is orthogonal to an electric field is introduced through an electromagnetic coil; tungsten filaments of a heating power supply and a potential power supply are not externally accessed into the electromagnetic coil; the tungsten filaments are connected with the anode of the potential power supply and are connected with a grounded copper plate, so that the potential of the tungsten filaments is negative, and the electric field is formed between the tungsten filaments and a grounded vacuum chamber. The motion tracks of thermal electrons which control the tungsten filaments to emit are longer, so that the thermal electrons can effectively collide with argon molecules to perform collision ionization; a stainless steel substrate is externally connected with the cathode of the power supply, so that negative potential of the stainless steel substrate is ensured, the surface potential barrier is reduced, more electrons are generated through a field effect to collide with the argon molecules, and the ionization rate of the argon is increased to 70-80%.

Description

technical field [0001] The invention relates to the technical field of preparation of transparent conductive films, in particular to a device and method for preparing AZO films by using a magnetron sputtering method. Background technique [0002] In recent years, zinc oxide (ZnO)-based transparent conductive films have attracted a lot of attention, and typical applications include thin-film solar cells, flat panel displays, flexible electronics, etc. There are many doping elements to improve the conductivity of ZnO, but aluminum doping is one of the most promising. There are many methods for preparing aluminum-doped zinc oxide (AZO) thin films, including chemical vapor deposition (CVD), physical vapor deposition (PVD), sol-gel method, spraying method, etc. The advantages and disadvantages of each method vary. Due to its success in the preparation of electronic devices such as semiconductor integrated circuits, the magnetron sputtering method is one of the most promising la...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/08
Inventor 彭寿王芸马立云崔介东
Owner (CNBM) BENGBU DESIGN & RES INST FOR GLASS IND CO LTD
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