High-energy electron injection type semiconductor laser

Abstract

The invention belongs to the technical field of instruments and equipment, and particularly relates to a high-energy electron injection type semiconductor laser. A sleeve is internally provided with a resonant cavity, an air return cavity and a discharge cavity, the air return cavity is internally provided with an air storage sleeve, an air storage bottle, an air suppression bottle and an air pressure detector are arranged on the air storage sleeve, an electromagnetic vacuum inflation valve is arranged between the air storage bottle and the gas suppression bottle, a corrugated pipe is arranged between the gas suppression bottle and the air pressure detector, the air pressure detector is partially located in the air return cavity and partially penetrates through the air return cavity to be located outside the air return cavity, a conductor anode includes an upper electrode, an upper light limiting layer, an upper waveguide layer, a lower waveguide layer, a lower light limiting layer and a back electrode layer in sequence from outside to outside, an active layer is arranged between the upper waveguide layer and the lower waveguide layer, a substrate is arranged between the lower light limiting layer and the back electrode, and the shape of a cross section of the upper light limiting layer is a ridge waveguide.

Description

technical field [0001] The invention belongs to the technical field of instruments and equipment, in particular to a high-energy electron injection semiconductor laser. Background technique [0002] A semiconductor laser is a device that produces stimulated emission by using a certain semiconductor material as a working substance. Between the energy band and the impurity (acceptor or donor) energy level, the particle number inversion of non-equilibrium carriers is realized. When a large number of electrons and holes in the particle number inversion state recombine, stimulated emission occurs. There are three main excitation methods for semiconductor lasers, namely electrical injection, optical pumping and high-energy electron beam excitation. For example, Chinese patent 201310499966.X discloses a semiconductor laser, including a heat sink, a chip and a negative electrode strip arranged on the heat sink, an insulating and heat-conducting layer is welded on the heat sink, and...

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Problems solved by technology

[0003] The present invention provides a high-energy electron injection semiconductor laser to solve the problems of low light extraction rate and short service life in the above background technology

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