Sapphire substrate-based multilayer gallium oxide thin film and growing method thereof

A technology of a sapphire substrate and a growth method, applied in the field of microelectronics, can solve the problems of poor surface morphology and small grain size of Ga2O3 thin films, and achieve the effects of improving surface morphology, increasing seed crystal nucleation density, and improving coverage.

Inactive Publication Date: 2015-12-02
XIDIAN UNIV
View PDF1 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, at present, the Ga2O3 thin film deposited by PLD adopts a single growth method, that is, the same process parameters are used during the growth process, including oxygen pressure, laser energy, substrate temperature, etc., so that PLD technology can be used on sapphire substrates. Poor surface morphology and small grain size of Ga2O3 films obtained by heteroepitaxial

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Sapphire substrate-based multilayer gallium oxide thin film and growing method thereof
  • Sapphire substrate-based multilayer gallium oxide thin film and growing method thereof
  • Sapphire substrate-based multilayer gallium oxide thin film and growing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Example 1, a multilayer gallium oxide thin film containing three composite layers is fabricated on a sapphire substrate.

[0024] refer to figure 1 , the multilayer gallium oxide thin film of this embodiment comprises a sapphire substrate 1, a first gallium oxide buffer layer 2, a first gallium oxide epitaxial layer 3, a second gallium oxide buffer layer 4, a second gallium oxide epitaxial layer from bottom to top 5. The third gallium oxide buffer layer 6 and the third gallium oxide epitaxial layer 7 . Wherein the substrate 1 is a sapphire substrate with (0001) orientation, the third gallium oxide epitaxial layer 7 adopts Ga2O3 material with a thickness of 25nm, the first gallium oxide buffer layer 2, the second gallium oxide buffer layer 4 and the third gallium oxide buffer layer Layer 6 is made of Ga2O3 material with a thickness of 8nm, the first gallium oxide epitaxial layer 3 is made of Ga2O3 material with a thickness of 15nm, and the second gallium oxide epitaxial...

Embodiment 2

[0047] Example 2, a multilayer gallium oxide thin film containing two composite layers is fabricated on a sapphire substrate.

[0048] refer to image 3 , the multilayer gallium oxide thin film of this embodiment comprises a sapphire substrate 1, a first gallium oxide buffer layer 2, a first gallium oxide epitaxial layer 3, a second gallium oxide buffer layer 4 and a second gallium oxide epitaxial layer from bottom to top 5. Wherein the substrate 1 is a sapphire substrate of (0001) orientation, the first gallium oxide buffer layer 2 and the second gallium oxide buffer layer 4 adopt Ga2O3 material with a thickness of 12nm, the first gallium oxide buffer layer 2 and the first gallium oxide buffer layer The epitaxial layer 3 forms the first composite layer; as described; the first gallium oxide epitaxial layer 3 adopts a Ga2O3 material with a thickness of 20nm, and the second gallium oxide epitaxial layer 5 adopts a Ga2O3 material with a thickness of 25nm. The second gallium oxi...

Embodiment 3

[0070] Example 3, a gallium oxide thin film containing four composite layers is fabricated on a sapphire substrate.

[0071] refer to Figure 5 , the multilayer gallium oxide thin film of this embodiment comprises a sapphire substrate 1, a first gallium oxide buffer layer 2, a first gallium oxide epitaxial layer 3, a second gallium oxide buffer layer 4, a second gallium oxide epitaxial layer from bottom to top 5. The third gallium oxide buffer layer 6 , the third gallium oxide epitaxial layer 7 , the fourth gallium oxide buffer layer 8 and the fourth gallium oxide epitaxial layer 9 . Wherein the substrate 1 is a sapphire substrate with (0001) orientation, the fourth gallium oxide epitaxial layer 9 adopts Ga2O3 material with a thickness of 25nm, the first gallium oxide buffer layer 2, the second gallium oxide buffer layer 4, the third gallium oxide buffer layer Layer 6 and the fourth gallium oxide buffer layer 8 adopt Ga2O3 material with a thickness of 10nm, the first gallium ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a sapphire substrate-based multilayer gallium oxide thin film and the growing method thereof, and mainly solves the problem of poor appearance and small crystal grain size of conventional gallium oxide thin films. The gallium oxide thin film comprises a sapphire substrate and gallium oxide epitaxial layers. and is characterized in that a plurality of epitaxial layers are provided, a 8-12nm of gallium oxide buffer layer is arranged under each gallium oxide epitaxial layer from top to bottom, and a composite structure of buffer layers and epitaxial layers alternatively formed is formed on the substrate. The surface roughness of a Ga2O3 is reduced, the surface appearance of the Ga2O3 is improved, and the crystal grain size of the Ga2O3 is increased. The sapphire substrate-based multilayer gallium oxide thin film can be used to manufacture a semiconductor power device.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to a method for growing semiconductor materials, in particular to a Ga2O3 thin film manufacturing method, which can be used for manufacturing semiconductor power devices. Background technique [0002] In recent years, the third-generation semiconductors represented by SiC and GaN have been widely used due to their characteristics such as large band gap, high breakdown electric field, high thermal conductivity, high saturation electron velocity and high concentration of two-dimensional electron gas at the heterojunction interface. focus on. Although the third-generation semiconductor materials and devices have made significant progress and have entered the stage of practical application, their wide-ranging applications are still limited due to many defects in SiC and GaN materials. For this reason, on the basis of the growth of SiC and GaN materials, device manufacturing and ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/24H01L21/02
CPCH01L29/0684H01L21/0242H01L21/02483H01L21/02565H01L21/02631H01L29/24
Inventor 冯倩李付国代波谢文林徐通郝跃
Owner XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap