Seed crystal addition and atmosphere protection device for preparing high-purity gallium through crystallization method

Abstract

The invention discloses a seed crystal addition and atmosphere protection device for preparing high-purity gallium through the crystallization method. A threaded hole is formed in the center of an end cover, and a lifting rod is a threaded rod and installed on the end cover through the threaded hole in the center of the end cover. The end cover is connected and matched with the top end of a crystallizer in a sealed mode. A support is connected to the lower end of the lifting rod, the lower ends of vertical through pipes are fixedly connected to the support, and the upper ends of the vertical through pipes are located above the end cover through through holes formed in the end cover. Supporting feet are arranged at the outer end of the support and matched with the inner wall of the crystallizer in a contact mode. An air inlet hole way is formed between the end cover and the support. The lifting rod can be solid or hollow; when the lifting rod is hollow, the central hole way of the lifting rod is the air inlet hole way. A handle is arranged at the upper end of the lifting rod. The supporting feet are uniformly arranged. The end cover and the crystallizer are matched in shape. According to the invention, the seed crystal addition process can be effectively simplified, the production cycle can be shortened, the influence of the production environment atmosphere to the purification process can be effectively avoided, and the production cost can be saved.

Description

technical field [0001] The invention belongs to the technical field of high-purity gallium preparation, in particular to a seed crystal addition and atmosphere protection device for preparing high-purity gallium by crystallization. Background technique [0002] With the wide application of GaAs, GaP, GaN and other inorganic semiconductor materials in high-tech industries such as optoelectronics and microelectronics, the preparation method and production process of high-purity metal gallium have become one of the key research topics in the metallurgical industry. [0003] As one of the main methods for preparing high-purity gallium metal, the crystallization method is to partially solidify liquid gallium along a certain direction, and use the distribution difference of impurity elements in different phases to make impurity elements in liquid gallium and solid gallium Redistributed in the medium to obtain relatively pure gallium metal, so as to achieve the purpose of refining ...

AI Technical Summary

Problems solved by technology

[0006] ①After the residual gallium is removed at the end of each crystallization, it is necessary to melt the solid gallium before removing it from the crystallizer, and re-coat the seed crystal or add the seed crystal, which makes it inconvenient to add the seed crystal;

[0007] ②Since the crystallizer has an open structure, it needs to be operated in a dust-free workshop or in a vacuum glove box, resulting in the purification process being greatly affected by the ambient atmosphere, which is not conducive to reducing production costs

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