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A low-power, zero-bias single-row carrier photodetector

A photodetector, single-row carrier technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as photodetector performance degradation, achieve good responsivity and response bandwidth, reduce coupling loss, and reduce power consumption Effect

Active Publication Date: 2017-03-29
BEIJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The invention aims to solve the technical problem of performance degradation of photodetectors when processing high-power optical signals, and provides a new type of single-line current-carrying device with better performance under low-power zero-bias voltage on an InP-based substrate sub-photodetector

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  • A low-power, zero-bias single-row carrier photodetector

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Embodiment Construction

[0016] figure 1 is a schematic structural view of the single row carrier photodetector described in the embodiment of the present invention, such as figure 1 As shown, the single-row carrier photodetector includes: a semi-insulating InP substrate 11, an n-type heavily doped InP sub-collection layer 12, an n-type lightly doped InP collection layer 13, a p-type lightly doped InGaAsP transition layer 14, p-type gradiently doped InGaAs absorption layer 15, p-type heavily doped InAlAs electron blocking layer 16 and p-type heavily doped InGaAs contact layer 17. The entire epitaxial structure can be monolithically grown on a semi-insulating InP substrate by techniques such as molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD), and then photolithography and wet etching or dry etching techniques A circular or other shaped photodetector and its mesas with a certain area are etched. Next, contact electrodes are vapor-deposited on the photodetector mesa by c...

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Abstract

The invention discloses a low-power consumption zero-bias uni-travelling carrier photodetector. The photodetector is formed by an InP semi-conducting substrate and an epitaxial layer arranged on the InP semi-conducting substrate. The epitaxial layer comprises the InP semi-conducting substrate, a first InGaAs corrosion-resisting layer, an InP secondary collecting layer on which an n type contact electrode is plated, a second InGaAs corrosion-resisting layer, an InP collecting layer, an InGaAsp transition layer, an InGaAs absorption layer, an InAlAs electronic blocking layer and an InGaAs contact layer on which a p type contact electrode is plated. InAlAs / InGaAs heterojunctions are optimally used on the absorption layer and the electronic blocking layer. By use of the high Fermi level and big forbidden band width of the InAlAs, high responsitivity and corresponding bandwidth in zero-bias can be obtained, and power consumption is reduced.

Description

technical field [0001] The invention relates to the technical field of optical communication and sensing, in particular to a structure of a single row carrier photodetector with low power consumption and no bias voltage required. Background technique [0002] The rapid development of optical fiber communication systems and microwave photonic applications has increased the demand for high-speed and high-power performance of photodetectors. [0003] In order to meet these demands, a single row carrier photodetector using only high-speed electrons as carriers has been proposed and has received a lot of attention in recent years. power optical signal capability. However, the normal operation of ordinary single-carrier photodetectors requires the support of high reverse bias voltage, and photodetectors will generate a large amount of Joule heat in the working environment of high-power light injection and high reverse bias voltage. What comes is higher thermal noise and thermal ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/08H01L31/0304
CPCH01L31/03046H01L31/08
Inventor 黄永清费嘉瑞段晓峰刘凯王俊任晓敏王琦蔡世伟张霞
Owner BEIJING UNIV OF POSTS & TELECOMM