Unlock instant, AI-driven research and patent intelligence for your innovation.

Resist underlayer film-forming composition

A resist underlayer and composition technology, which is applied in the field of resist underlayer film forming compositions for photolithography, can solve problems such as inability to form resist patterns, and achieve the effect of suppressing bending

Active Publication Date: 2019-07-05
NISSAN CHEM IND LTD
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This photolithography process is known to have the following problems: when exposing the resist layer on the substrate with ultraviolet lasers such as KrF excimer laser and ArF excimer laser, due to the ultraviolet laser light generated on the surface of the substrate Due to the influence of standing waves caused by reflection, resist patterns with desired shapes cannot be formed

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Resist underlayer film-forming composition
  • Resist underlayer film-forming composition
  • Resist underlayer film-forming composition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0045] The weight-average molecular weights and polydispersities shown in Synthesis Examples 1 to 3, Comparative Synthesis Example 1, and Comparative Synthesis Example 2 below are based on measurements obtained by gel permeation chromatography (hereinafter, abbreviated as GPC in this specification). result. For the measurement, a GPC system manufactured by Tosoh Corporation was used, and the measurement conditions are as follows.

[0046] GPC column: TSKgel SuperMultipore [registered trademark] Hz-N (Tosoh Corporation)

[0047] Column temperature: 40°C

[0048] Solvent: Tetrahydrofuran (THF)

[0049] Flow: 0.35ml / min

[0050] Standard sample: Polystyrene (Tosoh Corporation)

Synthetic example 1

[0052] 3,3',5,5'-tetramethoxymethyl-4,4'-dihydroxybiphenyl (hereinafter, abbreviated as TMOM-BP in this specification.) (23.83g, 0.066mol, produced by Honshu Chemical Industry Co., Ltd.), pyrene (27.00g, 0.134mol, produced by Tokyo Chemical Industry Co., Ltd.), p-toluenesulfonic acid monohydrate (0.53g, 0.003mol, produced by Tokyo Chemical Industry Co., Ltd. ), further loaded into 1,4-two Alkane (119.84 g, manufactured by Kanto Chemical Co., Ltd.) was stirred, and the temperature was raised until reflux was confirmed to dissolve and start polymerization. After standing to cool to 60 degreeC after 6 hours, it reprecipitated in methanol (1000g, the Kanto Chemical Co., Ltd. product). The obtained precipitate was filtered and dried at 60° C. for 12 hours with a vacuum drier to obtain a target polymer having a structural unit represented by the following formula (3) (hereinafter, abbreviated as TMOM-Py in this specification.) 28.6g. The obtained TMOM-Py had a weight average mol...

Synthetic example 2

[0055] TMOM-BP (2.21 g, 0.006 mol, manufactured by Honshu Chemical Industry Co., Ltd.), carbazole (5.00 g, 0.030 mol, manufactured by Tokyo Chemical Industry Co., Ltd.), 1-pyrene formaldehyde (5.76 g, 0.025mol, manufactured by Sigma Aldrich), p-toluenesulfonic acid monohydrate (0.89g, 0.006mol, manufactured by Tokyo Chemical Industry Co., Ltd.), and further charged with 1,4-di Alkane (25.75 g, manufactured by Kanto Chemical Co., Ltd.) was stirred, and the temperature was raised until reflux was confirmed to dissolve it, and polymerization was started. After standing to cool to 60 degreeC after 7 hours, it reprecipitated in methanol (1000g, the Kanto Chemical Co., Ltd. product). The precipitate obtained was filtered, and dried at 60° C. for 12 hours with a decompression dryer to obtain the target polymer (hereinafter referred to as TMOM-Cz for short in this specification) with two structural units represented by the following formula (4). -PCA.) 6.3 g. The obtained TMOM-Cz-PC...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

[Problem] To provide a novel composition for forming a resist underlayer film. [Solution] A composition for forming a resist underlayer film, said composition containing a solvent and a polymer that has a constitutional unit that can be represented by formula (1). (1) (In formula (1), X1 represents a C6 - 20 divalent organic group that has at least one aromatic ring that may be substituted with a halogeno group, a nitro group, an amino group, or a hydroxy group; and X2 represents either a methoxy group or a C6 - 20 organic group that has at least one aromatic ring that may be substituted with a halogeno group, a nitro group, an amino group, or a hydroxy group.)

Description

technical field [0001] The present invention relates to a composition for forming a resist underlayer film for photolithography. In particular, it relates to a composition for forming a resist underlayer film which has high hardness and does not easily cause wiggling of a resist pattern formed by a photolithography process. Background technique [0002] In the manufacture of semiconductor devices, microfabrication is performed using a photolithography process. This photolithography process is known to have the following problems: when exposing the resist layer on the substrate with ultraviolet lasers such as KrF excimer laser and ArF excimer laser, due to the ultraviolet laser light generated on the surface of the substrate Due to the influence of standing waves generated by reflection, a resist pattern having a desired shape cannot be formed. In order to solve this problem, a method of providing a resist underlayer film (antireflection film) between the substrate and the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/11C08G61/02C08L65/00H01L21/027
CPCC08G61/02C08G61/124C08G73/026C08G2261/1422C08G2261/3241C08G2261/3424C08L65/00C08L79/02G03F7/091
Inventor 桥本圭祐西卷裕和新城彻也染谷安信柄泽凉坂本力丸
Owner NISSAN CHEM IND LTD