Electronic device shell with surface covered with TiN-nanometer TiO<2> film and processing method for electronic device shell
A technology for surface covering and electronic devices, which is applied in the field of electronic device casings covered with TiN-nano-TiO2 film and its processing, can solve the problems of contamination and easy dust accumulation on the casings of electronic devices, and achieve high target material utilization, Reduce the growth or spread of bacteria and improve product competitiveness
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Embodiment 1
[0038] Surface covered with TiN-nano-TiO 2 Membrane electronics housings such as figure 2 shown, including the substrate, nano-TiO covering the outer surface of the substrate 2 Membrane 103 and connecting matrix with nano-TiO 2 Preset layer of film 103; the nano-TiO 2 The film 103 is a rutile phase lattice structure or anatase phase lattice structure or a mixed lattice structure of rutile phase and anatase phase, and its thickness is 20-80nm; the substrate is a ceramic substrate 101, and the pre-set layer is TiN Preset layer 102 .
[0039] The surface covered TiN-nano TiO provided by the present invention 2 The electronic device housing of the membrane does not interfere with electronic signals, and has the characteristics of easy cleaning and self-cleaning. Nano TiO 2 The film 103 can not only make the shell look metallic, but also decompose the dust, sweat or residual organic pollutants adhering to the shell surface under the irradiation of visible light or ultraviole...
Embodiment 2
[0043] Surface covered with TiN-nano-TiO 2 A method of processing a film of an electronic device housing, such as figure 1 shown, including the following steps:
[0044] Step S100: performing surface treatment on the ceramic substrate 101;
[0045] Step S200 : placing the surface-treated ceramic substrate 101 firmly on the tray of the magnetron sputtering machine, and transporting the substrate to the vacuum chamber where the titanium metal target is installed through the conveying device;
[0046] Step S300: close the inlet and outlet of the vacuum chamber, and evacuate to 3×10 -4 —5x10 -4 Pa, enter the mixed gas of argon and nitrogen;
[0047] Step S400: Sputtering is performed under the process conditions of power of 50-200W, bias voltage of 120-160V, target distance of 30-40mm, and substrate temperature of 30-300°C, and the sputtering time is controlled to be 20-60min;
[0048] Step S500: Slowly open the vacuum chamber to communicate with the outdoor air, and then re-...
Embodiment 3
[0052] This embodiment is further optimized on the basis of Embodiment 2. Further, the step S100 specifically refers to the following process:
[0053] Step S110: Put the ceramic substrate 101 into a water area with a water temperature of 60-80°C and let it stand for 1-2 hours;
[0054] Step S120: put the ceramic substrate 101 into a cleaning tank configured with 20-50% acetone solution, and use ultrasonic cleaning for 10-20 minutes;
[0055] Step S130: rinse the ceramic substrate 101 with flowing deionized water to remove the acetone solution;
[0056] Step S140 : take out the ceramic substrate 101 and dry the surface of the ceramic substrate 101 with cold air before use. The other parts of this embodiment are the same as those of Embodiment 2, so they are not repeated here.
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Abstract
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