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Method for stabilizing the initial state of nozzle-type mocvd, chlorine-resistant double-layer nozzle and its manufacturing method

An initial state and nozzle technology, applied in chemical instruments and methods, coatings, gaseous chemical plating, etc., can solve problems such as increased chlorine corrosion and difficulty in nozzle cleaning

Active Publication Date: 2018-07-10
NANCHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Chlorine online cleaning method is common in the semiconductor industry. In order to enhance the chlorine cleaning effect, the temperature of chlorine corrosion needs to be increased. The disadvantage is that the vertical air flow type nozzle is water-cooled, which is a cold wall, and the heat conduction to the surface of the nozzle is mainly gas convection , unlike AIXTRON horizontal flow MOCVD, the "ceiling" to be cleaned is not water-cooled, but a hot wall, so it is much more difficult to clean the vertical air flow nozzle
In addition, when cleaning with chlorine in the semiconductor industry, there are also lamps used to heat the graphite base. Of course, the light from the lamps will also shine on the surface to be cleaned, so chlorine cleaning is relatively easy

Method used

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  • Method for stabilizing the initial state of nozzle-type mocvd, chlorine-resistant double-layer nozzle and its manufacturing method
  • Method for stabilizing the initial state of nozzle-type mocvd, chlorine-resistant double-layer nozzle and its manufacturing method
  • Method for stabilizing the initial state of nozzle-type mocvd, chlorine-resistant double-layer nozzle and its manufacturing method

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Embodiment 1

[0052] Embodiment 1: The method for stabilizing the initial state of the near-coupled nozzle type MOCVD reaction tube and the chlorine-resistant double-layer nozzle and its production method

[0053] A method for stabilizing the initial state of a close-coupled nozzle-type MOCVD reaction tube is as follows (taking manual operation as an example):

[0054] A. After completing a furnace of epitaxial growth each time, open the reaction tube, that is, the lower flange 16 of the nozzle is disengaged from the reaction tube flange 17, and take out the graphite disk 24 filled with the epitaxial substrate 6 with randomly configured calipers;

[0055] B. Replace the "dirty" graphite disc 24 that was not cleaned in the previous furnace; place a porous heat conducting plate 5 on the surface of the "dirty" graphite disc 24. In this embodiment, the material of the plate is graphite, and chlorine can pass through multiple holes Diffusion to the surface of the graphite disc 24, thereby ensuri...

Embodiment 2

[0067] The structure of embodiment 2 is basically the same as that of embodiment 1, the difference lies in:

[0068] A method for stabilizing the initial state of a close-coupled nozzle-type MOCVD reaction tube, using a manipulator to operate:

[0069] (1) After each batch of epitaxial growth is completed, the manipulator takes out the graphite disk 24 filled with the epitaxial substrate 6;

[0070] (2) The manipulator is replaced with the "dirty" graphite disk 24 that has not been cleaned from the previous furnace, and the porous heat conducting plate 5 of the graphite disk has been placed on the surface;

[0071] (3) Charge dry hydrogen chloride with a concentration of 5% from the chlorine channel 7 into the reaction tube for online cleaning. The total charge depends on the molar concentration of chlorine, the thickness and area of ​​the deposited layer, and of course the cleaning temperature to achieve clean But slightly over the head shall prevail; the temperature of grap...

Embodiment 3

[0075] The structure of embodiment 3 is basically the same as that of embodiment 1, the difference lies in:

[0076] Before chlorine filling and cleaning, the porous heat conduction plate 5 is canceled; at this time, the working principle is to directly shorten the distance between the graphite disc base 24 and the lower surface of the nozzle main body 4 by mechanical means, and reset it to the lower surface by mechanical means after cleaning. growth state;

[0077] The welding between the partition plate 12 between the III group source and the V group source and the many square small columns in the V group source chamber 2 adopts brazing, because these brazing materials do not directly contact with chlorine, so brazing is allowed; The slit 32 is selected to be located on the lower surface opening of the shower head body 4 processed by EDM. At this time, the advantage is that the argon arc welding method is used to block these slits without being hindered by many small square ...

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Abstract

The invention discloses a method for stabilizing the initial state of a nozzle-type MOCVD, a chlorine-resistant double-layer nozzle and a manufacturing method. The nozzle uses electric sparks to directly punch nozzle holes of Group III sources and Group V sources, and these nozzle holes replace those with rough inner surfaces. The stainless steel capillary nozzle greatly reduces the inner surface area of ​​the jet hole, thereby reducing the memory effect of the extension; the vacuum brazing process of the stainless steel capillary tube that is not resistant to chlorine corrosion is abandoned during the production of the nozzle, so the nozzle can withstand chlorine gas online cleaning, thus ensuring The initial state of each furnace epitaxial growth is constant and controllable, so that the close-coupled nozzle MOCVD can be perfectly used in the mass production of the third-generation semiconductor optoelectronic devices with high aluminum components; the cooling water channel of the nozzle and the group III source and V source The air jet holes are all processed by EDM, which eliminates the hidden danger of water leakage due to thin capillary walls, and can meet the strict sealing requirements of the semiconductor industry.

Description

technical field [0001] The invention relates to a metal organic chemical vapor deposition (MOCVD) method and equipment, in particular to a method for stabilizing the initial state of a nozzle-type MOCVD, a chlorine-resistant double-layer nozzle and a manufacturing method. Background technique [0002] Metal-organic compound vapor deposition growth equipment (MOCVD) has been widely used to grow nitride semiconductor materials. This type of material belongs to the third-generation semiconductor material. At present, light-emitting diodes (LEDs) based on this type of material have been widely used in human society. It has brought high-efficiency, long-life, mercury-free semiconductor lighting, and will open up a new and broader world in energy conversion and wireless high-speed interconnection in the future. [0003] Nozzle-type MOCVD is classified as vertical airflow type in the industry. At present, there are mainly two types of commercial MOCVD in this form. One is the close...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/455C30B25/14C23C16/02C30B25/02
Inventor 方文卿王小兰莫春兰汤绘华佟金山朱绪元
Owner NANCHANG UNIV