Thin film transistor, preparation method of the thin film transistor, array substrate and display apparatus

Abstract

The invention discloses a thin film transistor, a preparation method of the thin film transistor, an array substrate and a display apparatus. After forming of an active layer and before forming of a source electrode and a drain electrode, a first initial ohmic contact layer and a second initial ohmic contact layer are formed on the active layer, and are arranged oppositely; the materials for the first initial ohmic contact layer and the second initial ohmic contact layer are oxide materials; after the source electrode and the drain electrode are formed, high temperature processing of the oxide materials are performed so that the copper atoms in the source electrode and the drain electrode can be diffused to the first initial ohmic contact layer and the second initial ohmic contact layer, so the oxide materials are higher in conductivity. Compared with the prior art, the first initial ohmic contact layer with high conductivity is arranged between the source electrode and the active layer and the second initial ohmic contact layer with high conductivity is arranged between the drain electrode and the active layer so that better ohmic contact can be realized between the source electrode and the active layer, and between the drain electrode and the active layer, and the performance of the thin film transistor can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a thin film transistor, a preparation method thereof, an array substrate and a display device. Background technique [0002] In pixel units of various display devices, thin film transistors (Thin Film Transistor, TFT) that drive the display device by applying a driving voltage are widely used. Amorphous silicon (a-Si) materials with better stability and processability have been used in the active layer of TFTs, but the carrier mobility of a-Si materials is low, which cannot meet the needs of large-scale, high-resolution display devices. requirements, especially the requirements of the next generation of active matrix organic light emitting display devices (ActiveMatrixOrganicLightEmittingDevice, AMOLED). Compared with amorphous silicon (a-Si) thin film transistors, polysilicon, especially low-temperature polysilicon thin film transistors have higher electron mobility, bet...

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Problems solved by technology

[0004] In the above-mentioned polysilicon thin film transistor, since the width-to-length ratio of the channel of the thin-film transistor is defined by a self-alignment process on the gate electrode, the width-to-length ratio is large, and the source electrode and the drain electrode are respectively in ohmic contact with the active layer poor performance

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