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A kind of zno/pvk-tfb hybrid LED and its preparation method

A LED device and hybridization technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve problems such as weak luminous intensity, achieve enhanced luminous efficiency, low equipment and raw material prices, simple and safe method process Effect

Inactive Publication Date: 2017-03-01
CHANGAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the luminous intensity of ZnO / PVK-TFB hybrid LEDs reported so far is still weak, and it is urgent to improve

Method used

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  • A kind of zno/pvk-tfb hybrid LED and its preparation method
  • A kind of zno/pvk-tfb hybrid LED and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0022] The existing process of preparing ZnO / PVK-TFB hybrid LED is to spin-coat PEDOT:PSS material on a glass substrate, then spin-coat PVK-TFB material, then grow a zinc oxide matrix layer on it by hydrothermal method, and finally Metal electrodes are prepared on top of the zinc oxide matrix layer. The present invention also changes the original method of making ZnO / PVK-TFB hybrid LEDs, first spin-coating a layer of graphene doped with N on the ITO glass, followed by a zinc oxide layer and a graphene layer grown on the zinc oxide layer Zinc oxide matrix, fill the graphene material doped with N in the matrix, then spin-coat PVK-TFB layer and PEDOT:PSS layer on the top of the zinc oxide matrix to obtain the IED device of the present invention, this preparation method utilizes ITO as the substrate It is also a conductive layer. Since ITO is a transparent material and does not affect the light output, it can be in contact with the zinc oxide matrix in a large area. Compared with ...

Embodiment 1

[0026] Step 1: Utilize redox method to prepare the graphene powder doped with N, the steps are as follows: add 50g / L graphite powder and 20g / L potassium permanganate to obtain mixed solution in the concentrated sulfuric acid of mass fraction 98%, mix solution successively in After stirring for 1 hour at 10 / 30 / 90 degrees Celsius, add an equal volume of 30% hydrogen peroxide, take out the precipitated graphite oxide after standing for 5 days, add an equal mass of melamine to mix, ultrasonicate for 2 hours, and then dry it to obtain Solid matter, the solid matter is heat-treated for 1 hour under the protection of nitrogen at 1000 degrees Celsius to obtain N-doped graphene powder, and then the graphene powder is dissolved in alcohol to obtain a graphene suspension with a mass percentage of 20%;

[0027] Step 2: Spin-coat the graphene suspension prepared in step 1 onto the ITO glass with part of the electrode mask reserved, repeat twice, and obtain a graphene functional layer with a...

Embodiment 2

[0036] The preparation method and test are the same as in Example 1, but the step of adding a graphene functional layer in Step 2 is omitted. figure 2 The EL emission spectrum of the ZnO / PVK-TFB hybrid LED prepared in this implementation is given in , and it can be seen that its luminous intensity is lower than that of Example 1.

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Abstract

The invention relates to a ZnO / PVK-TFB hybrid LED and a preparation method thereof. The method includes two links using graphene, respectively using nitrogen-doped graphene as a functional layer and nitrogen-doped graphene As a filler; specifically, using nitrogen-doped graphene as a functional layer refers to the graphene functional layer obtained by spin-coating a nitrogen-doped graphene suspension onto the ITO glass with a part of the electrode mask reserved. The thickness is about 50 nm. Using nitrogen-doped graphene as a filler means that the nitrogen-doped graphene suspension is spin-coated into the gaps of ZnO nanoarrays; using the method of the present invention, the ZnO / The luminous intensity of PVK‑TFB hybrid LEDs is several times higher.

Description

technical field [0001] The invention relates to the field of semiconductor materials and preparation thereof, in particular to a ZnO / PVK-TFB hybrid LED and a preparation method thereof. Background technique [0002] Light-emitting diodes (LED for short) have been recognized as the next-generation lighting technology by countries all over the world. LED is called the fourth-generation lighting source or green light source. It has the characteristics of energy saving, environmental protection, long life, and small size. It can be widely used in various indications, displays, decorations, backlights, general lighting and urban night scenes. LED devices composed of inorganic semiconductors and organic semiconductors are called hybrid LEDs. Compared with pure inorganic LEDs or organic LEDs, hybrid LEDs can overcome the difficulties in doping of inorganic semiconductors and organic semiconductors, and can obtain lower energy consumption than inorganic LEDs. Lower production costs...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K71/12H10K50/115H10K71/00
Inventor 段理樊继斌于晓晨田野程晓姣何凤妮
Owner CHANGAN UNIV