A Composite Channel Organic Field Effect Transistor

A composite channel and organic field technology, which is applied in the manufacturing of electrical components, electrical solid-state devices, semiconductor/solid-state devices, etc., can solve the problems of few interfaces and insufficient number of carriers, and achieve high switching current ratio and high current carrying. The effect of sub-mobility

Inactive Publication Date: 2018-05-04
CHINA JILIANG UNIV
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Problems solved by technology

At present, many OFET active layers are horizontally stacked with N-type active layer and P-type active layer. In this structure, the interface between N-type active layer and P-type active layer is too small, resulting in the number of carriers generated by exciton dissociation. not enough

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  • A Composite Channel Organic Field Effect Transistor

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Embodiment Construction

[0024] Such as figure 1 As shown, an organic field effect transistor with a composite channel, its preparation steps are as follows:

[0025] 1) The heavily doped silicon wafer was ultrasonically cleaned with acetone, ethanol, and deionized water for 30 minutes, and then dried in a glove box for 1 hour to clean the surface of the heavily doped silicon wafer;

[0026] 2) Place the above heavily doped silicon wafer in a UV / ozone environment for 120 minutes to obtain SiO 2 gate dielectric layer;

[0027] 3) On SiO 2 Positive photoresist is coated on the gate dielectric layer, and after pre-baking, exposure, development, and film hardening processes, ③ is obtained by photolithography. Pentacene active layer, control the evaporation rate to a vacuum of 1×10 -4 Pa; remove the glue after evaporation;

[0028] 4) Repeat step 3) to obtain ④ by photolithography, and the channel length is 200nm; then use the vacuum coating method to evaporate a 30nm thick C60 active layer on the hea...

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Abstract

The invention discloses an organic field effect transistor with a composite channel, which belongs to the field of microelectronic organic devices. At this stage, the field effect characteristics of the horizontally superimposed organic field effect transistors are not ideal, and they are far from the requirements of modern integrated circuit technology. The present invention provides an organic field effect transistor with a compound channel. By adopting a photolithography method and a mask method, a horizontal and longitudinally superimposed compound active layer is formed. The drain electrodes are composed and stacked in sequence. The structure increases the number of interfaces between the N-type active layer and the P-type active layer, and increases the number of carriers generated by exciton dissociation, thereby improving the field effect characteristics of the organic field effect transistor. A composite channel organic field effect transistor can provide a new idea for the preparation of organic field effect transistors with good field effect characteristics, which has an important impact on the commercial application of organic field effect transistors.

Description

technical field [0001] The invention belongs to the field of microelectronic organic devices, in particular to an organic field effect transistor with a composite channel. Background technique [0002] Organic Field Effect Transistor (OFET) has a series of advantages: it can be made into a large-area device, it is easy to adjust the performance of many materials, the preparation process is simple, the cost is low, and it has good flexibility. The research of OFET is to lay the foundation for the realization of all-organic circuits, so the research of high-performance OFET is more urgent. Modern integrated circuit technology requires good field effect transistor characteristics, such as high carrier mobility, large switching current ratio, and large subthreshold swing, but the current OFET is far from meeting the requirements of integrated circuit applications. The number of carriers is an important factor affecting the field effect characteristics of organic field effect tr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/05H01L51/10
Inventor 陈真郑亚开唐莹韦一彭应全
Owner CHINA JILIANG UNIV
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