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LDMOS (lateral double-diffused MOSFET) device and formation method therefor

A device and well region technology, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problem of LDMOS transistor performance to be improved, etc., to prevent the influence of gate turn-on voltage and output current, prevent aggregation, prevent The effect of an increase in body potential

Active Publication Date: 2016-02-17
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology

[0005] The performance of LDMOS transistors formed on existing silicon-on-insulator substrates still needs to be improved

Method used

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  • LDMOS (lateral double-diffused MOSFET) device and formation method therefor
  • LDMOS (lateral double-diffused MOSFET) device and formation method therefor
  • LDMOS (lateral double-diffused MOSFET) device and formation method therefor

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Embodiment Construction

[0035] Existing LDMOS transistors formed on silicon-on-insulator substrates have problems such as reduced source-drain breakdown and hot carriers.

[0036] After research, it is found that the LDMOS transistor is formed on the second substrate of the silicon-on-insulator substrate. The LDMOS transistor forms a capacitor relative to the first substrate, and the charge accumulates on the capacitor, which causes an adverse effect. This effect is the floating body effect. Take the N-type LDMOS transistor as an example. The specific mechanism is: the strong electric field in the drain region accelerates the channel electrons. After the accelerated electrons gain enough energy, they generate new electron-hole pairs through impact ionization. The electron-hole pairs are struggling under the action of the cavity electric field, the electrons are collected by the drain, and the holes are accumulated in the buried layer close to the source region. As the accumulated holes increase, the l...

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Abstract

A LDMOS (lateral double-diffused MOSFET) device and a formation method therefor are disclosed. The LDMOS device comprises a silicon on insulator, a LDMOS transistor positioned on the second substrate, a first doping region in a well region at the bottom of a source region, a first through hole penetrating through a buried layer, the first doping region, the well region and the source region, and a first metal plug, wherein the silicon on insulator comprises the buried layer and a second substrate on the buried layer; the LDMOS transistor comprises the well region in the second substrate, and the source region and a drain region in the well region; the depth of the source region and the drain region is less than that of the well region; the doping type of the source region and the drain region is opposite to the doping type of the well region; the doping type of the first doping region is the same as the doping type of the well region; and the first thorough hole is fully filled with the first metal plug. The LDMOS device overcomes the influences of a floating body effect.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an LDMOS device and a forming method thereof. Background technique [0002] The power field effect transistor mainly includes two types: a vertical double-diffused field effect transistor (VDMOS, Vertical Double-Diffused MOSFET) and a lateral double-diffused field effect transistor (LDMOS, Lateral Double-Diffused MOSFET). Among them, compared with the vertical double diffused field effect transistor (VDMOS), the lateral double diffused field effect transistor (LDMOS) has many advantages, for example, the latter has better thermal stability and frequency stability, higher gain and durability stability, lower feedback capacitance and thermal resistance, as well as constant input impedance and simpler bias current circuitry. [0003] A silicon-on-insulator (SOI, Silicon On Insulator) substrate is a substrate used in the manufacture of integrated circuits. Compared with b...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/06H01L21/336
Inventor 李海艇
Owner SEMICON MFG INT (SHANGHAI) CORP
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