Method for preparing high-purity topological insulator YbB6 single crystal

A topological insulator and single crystal technology, which is applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of affecting topological properties, small single crystal size, easy to bring in impurity aluminum elements, etc., to achieve high quality and high purity Effect

Inactive Publication Date: 2016-02-24
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the rare earth boride YbB is usually prepared by the aluminum solvent method 6 Single crystal, but the size of the single crystal prepared by this method is small, and it

Method used

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  • Method for preparing high-purity topological insulator YbB6 single crystal
  • Method for preparing high-purity topological insulator YbB6 single crystal
  • Method for preparing high-purity topological insulator YbB6 single crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] 1) YbB 6 Put the powder into a graphite mold after ball milling and mixing; place the mold in the sintering chamber of a plasma activation sintering machine, and sinter under a vacuum condition with a total pressure lower than 5Pa; heat up to 1300°C at a heating rate of 80°C / min, Insulate for 15 minutes, and cool to room temperature with the furnace to obtain YbB 6 polycrystalline rod;

[0019] 2) Using an optical zone melting furnace, YbB with a diameter of 5mm 6 The polycrystalline rod is used as the seed crystal and the material rod for the first zone melting purification; after the equipment is vacuumed below 1Pa, it is rushed into the flowing H 2 The content (volume content, the same below) is 5% H 2 / Ar reduction mixed gas until the pressure rises to 0.2MPa, the gas flow rate is 1.5L / min, and the power of the furnace in the 20min zone is increased to melt the seed crystal and material rod and form a stable melting zone. In order to make the melting zone more un...

Embodiment 2

[0022] 1) YbB 6 Put the powder into a graphite mold after ball milling and mixing; place the mold in the sintering chamber of a plasma activation sintering machine, and sinter under vacuum conditions with a total pressure lower than 5Pa; heat up to 1350°C at a heating rate of 100°C / min, Keep it warm for 12 minutes, and cool down to room temperature with the furnace to get YbB 6 polycrystalline rod;

[0023] 2) Using an optical zone melting furnace, YbB with a diameter of 8mm 6 The polycrystalline rod is used as the seed crystal and the material rod for the first zone melting purification; after the equipment is vacuumed below 1Pa, it is rushed into the flowing H 2 5% H 2 / Ar reduction mixed gas until the pressure rises to 0.2MPa, the gas flow rate is 1.8L / min, and the power of the furnace in the 20min zone is increased to melt the seed crystal and material rod and form a stable melting zone. In order to make the melting zone more uniform, the seed crystal and material The ...

Embodiment 3

[0026] 1) YbB 6 Put the powder into a graphite mold after ball milling and mixing; place the mold in the sintering chamber of a plasma activation sintering machine, and sinter under a vacuum condition with a total pressure lower than 5Pa; heat up to 1100°C at a heating rate of 120°C / min, Insulate for 10 minutes, and cool to room temperature with the furnace to obtain YbB 6 polycrystalline rod;

[0027] 2) Using an optical zone melting furnace, YbB with a diameter of 10mm 6 The polycrystalline rod is used as the seed crystal and the material rod for the first zone melting purification; after the equipment is vacuumed below 1Pa, it is rushed into the flowing H 2 5% H 2 / Ar reduction mixed gas until the pressure rises to 0.2MPa, the gas flow rate is 1.8L / min, and the power of the furnace in the 20min zone is increased to melt the seed crystal and material rod and form a stable melting zone. In order to make the melting zone more uniform, the seed crystal and material The rod ...

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Abstract

The invention discloses a method for preparing a high-purity topological insulator YbB6 single crystal, and belongs to the technical field of topological insulator materials. At present, preparation and study on the high-purity topological insulator YbB6 single crystal are rarely carried out, the preparation process is complex, and the single crystal is poor in quality, low in purity and small in size, and can hardly be actually applied. The method of combining plasma activated sintering and suspension zone melting is adopted, and the high-quality, high-purity and large-size YbB6 single crystal is prepared in the high vacuum environment. High-purity YbB6 powder is adopted as initial raw materials, the prepared YbB6 single crystal is a cylinder with phi of 4.5 mm*20 mm, and it is shown through the testing result of a single-crystal diffractometer that the quality of the single crystal is good.

Description

technical field [0001] The invention belongs to the technical field of topological insulator materials, and in particular relates to a method for preparing YbB by using an optical region melting method 6 Methods for single crystal materials. Background technique [0002] Topological insulators are a new quantum state of matter. Under the action of strong spin-orbit coupling, the bulk energy state is insulator, and the surface is metallic. This gapless surface state is a spin-resolved electronic state protected by time-reversal symmetry and described by the massless Dirac equation. These exotic features make topological insulators have important application prospects in the fields of spintronics and quantum computing in the future. In recent years, studies have found that SmB 6 and YbB 6 Single crystals are an important class of three-dimensional topological insulators, thus receiving more and more attention. Yb element is widely used as an important rare earth element,...

Claims

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Application Information

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IPC IPC(8): C30B29/10C30B13/00
CPCC30B13/00C30B29/10
Inventor 张忻刘洪亮王杨李录录江浩张久兴
Owner BEIJING UNIV OF TECH
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