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Multilayer nano-composite film material used for high-density phase-transition memory and preparation method thereof

A phase-change memory and nano-composite technology, applied in the field of multi-layer nano-composite thin film materials, can solve problems such as not disclosed, achieve high data retention temperature, increase storage density, and improve thermal stability

Active Publication Date: 2016-02-24
NINGBO UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, there is no public information about the combination of GaSb and Sb at home and abroad. 4 Related research reports on multi-layer nanocomposite thin film materials and their preparation methods combined with Te for high-density phase-change memory

Method used

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  • Multilayer nano-composite film material used for high-density phase-transition memory and preparation method thereof
  • Multilayer nano-composite film material used for high-density phase-transition memory and preparation method thereof
  • Multilayer nano-composite film material used for high-density phase-transition memory and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0021] A multi-layer nano-composite film material for high-density phase change memory. The chemical structure of the multi-layer nano-composite film material is [GaSb / Sb 4 Te] x , Where the thickness of the single-layer GaSb film is 4nm, and the single-layer Sb 4 The thickness of the Te film is 6nm; x represents a single layer of GaSb and a single layer of Sb 4 For the number of alternating periods or layers of the Te film, x can be any integer between 1-15.

Embodiment 2

[0023] The steps of the method for preparing the multilayer nanocomposite film material used in the high-density phase change memory in the above embodiment 1 are as follows:

[0024] In the magnetron sputtering coating system, a cleaned quartz wafer or silicon oxide wafer substrate is used to install the GaSb alloy target in the magnetron radio frequency sputtering target, and the Sb 4 Te alloy target is installed in a DC sputtering target, and the sputtering chamber of the magnetron sputtering coating system is evacuated until the indoor vacuum reaches 2.0×10 -4 Pa, then the GaSb alloy target and Sb 4 The Te alloy target was pre-sputtered for 10 minutes, and the sputtering power of the GaSb alloy target was controlled to 20W, Sb 4 The sputtering power of Te alloy target is 15W, and GaSb film and Sb are sputtered alternately at room temperature 4 Te film, until the total thickness of sputtering is 120nm, GaSb / Sb is obtained 4 Te multilayer nanocomposite film material, its chemical ...

Embodiment 3

[0027] The specific steps of the preparation method of the multilayer nanocomposite film material in the above specific embodiment 2 are as follows:

[0028] 1. Cleaning SiO 2 / Si(100) substrate, clean the surface and back, remove dust particles, organic and inorganic impurities

[0029] a) Ultrasonic cleaning in acetone solution for 3-5 minutes, rinse with deionized water;

[0030] b) Ultrasonic cleaning in ethanol solution for 3-5 minutes, rinse with deionized water, high purity N 2 Dry the surface and back;

[0031] c) Dry the water vapor in an oven at 80℃ for about 20 minutes;

[0032] 2. Using magnetron sputtering method to prepare GaSb / Sb 4 Preparation of Te multilayer composite film

[0033] a) Install GaSb and Sb 4 Te sputtering target material, the purity of the target material reaches 99.999% (atomic percentage), and the background vacuum is pumped to 2.0×10 -4 Pa;

[0034] b) Set the sputtering power of the radio frequency target to 20W and the sputtering power of the DC target...

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Abstract

The invention discloses a multilayer nano-composite film material used for a high-density phase-transition memory and a preparation method thereof. The multilayer nano-composite film material is characterized in that the multilayer nano-composite film material is a GaSb / Sb4Te multilayer composite film, and the structure accords with the following general formula: [GaSb / Sb4Te]x, wherein the thickness of a single GaSb film is 4nm, the thickness of a single Sb4Te film is 6nm, x stands for the alternating period number or alternating layer number of the single GaSb films and the single Sb4Te films, and x is an integer from 1-15. The preparation method comprises the steps of: cleaning a substrate, and installing sputtering target materials; firstly carrying out sputtering on GaSb target materials, then carrying out sputtering on Sb4Te target materials, and then carrying out sputtering on the GaSb films and the Sb4Te films alternatively. The multilayer nano-composite film material has the advantages that multi-level storage is realized, and the storage density of the memory is greatly improved; in addition, a decade data retention temperature is relatively high, and the heat stability of the memory is improved.

Description

Technical field [0001] The invention relates to a material in the technical field of microelectronics, in particular to a multilayer nanocomposite film material for high-density phase change memory. Background technique [0002] In recent years, phase change memory (PCRAM) has received more and more attention from researchers, and it is a hot spot in memory research at present, and it is considered to be the most promising next-generation mainstream memory. The principle of phase change memory is to use the Joule heat generated by the storage medium under the action of electric pulses to make the storage medium convert between the crystalline state (low resistance) and the amorphous state (high resistance) to realize the writing and erasing of information , The reading of information is realized by measuring the resistance of the memory. PCRAM has the advantages of high storage density, low power consumption, fast reading speed, strong stability, and compatibility with tradition...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00H01L27/24B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H10B63/00H10N70/00
Inventor 吕业刚王苗沈祥王国祥戴世勋
Owner NINGBO UNIV
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