Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Carbon-copper double-doped sapphire crystal and preparing method thereof

A sapphire crystal and carbon-copper technology, applied in crystal growth, chemical instruments and methods, single crystal growth, etc., can solve problems such as difficulty in forming multivalent states and meeting requirements

Inactive Publication Date: 2016-03-02
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
View PDF2 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

On the other hand, the electronic structure of Mg element is [Ne]3s 2 , belongs to the stable electronic structure, and it is difficult to form multivalent states
Therefore, it is impossible to use C:Mg:Al 2 o 3 It is difficult to meet the requirements in color center research and optical function applications.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Carbon-copper double-doped sapphire crystal and preparing method thereof
  • Carbon-copper double-doped sapphire crystal and preparing method thereof
  • Carbon-copper double-doped sapphire crystal and preparing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Weigh C, CuO and Al by x=0.2wt%, y=0.025wt% 2 o 3 Raw material 500g. Combine C and Al 2 o 3 Put it into a molybdenum crucible, put it into a high-temperature firing furnace protected by an inert atmosphere, raise the temperature at 150°C / h to 2050°C, keep it for 2 hours, and then cool it down to room temperature at 200°C / h. Then put CuO into the above-mentioned filled with C and Al 2 o 3 In the crucible of the sintered material, repeat the above-mentioned sintering process. Take out the prepared material from the crucible, place it in a tungsten crucible for crystal growth, and grow C:Cu:Al by temperature gradient method 2 o 3 crystals. A sapphire seed crystal in the direction was put into the bottom of the crucible, and the crystal growth was carried out in an Ar gas environment. The melting rate of the raw material is 100°C / h, the crystallization rate of the melt is 1°C / h, and the cooling rate of the crystal is 30°C / h.

[0028] The C:Cu:Al that embodiment 1...

Embodiment 2

[0035] Weigh C, CuO and Al by x=0.25wt%, y=0.05wt% 2 o 3 Raw material 600g. Combine C and Al 2 o 3 Put it into a molybdenum crucible, put it into a high-temperature firing furnace protected by an inert atmosphere, raise the temperature at 180°C / h to 2050°C, keep it for 2 hours, and then cool it down to room temperature at 200°C / h. Then put CuO into the above-mentioned filled with C and Al 2 o 3 In the crucible of the sintered material, repeat the above-mentioned sintering process. Take out the prepared material from the crucible, place it in a tungsten crucible for crystal growth, and grow C:Cu:Al by temperature gradient method 2 o 3 crystals. A sapphire seed crystal in the orientation was put into the bottom of the crucible, and the crystal growth was carried out in an Ar gas environment. The melting rate of the raw material is 120°C / h, the crystallization rate of the melt is 1.5°C / h, and the cooling rate of the crystal is 25°C / h.

Embodiment 3

[0037] Weigh C, CuO and Al by x=0.5wt%, y=0.08wt% 2 o 3 Raw material 500g. Combine C and Al 2 o 3 Put it into a tungsten crucible, put it into a high-temperature firing furnace protected by an inert atmosphere, raise the temperature to 2030°C at 200°C / h, and cool it down to room temperature at 200°C / h after holding for 2 hours. Then put CuO into the above-mentioned filled with C and Al 2 o 3 In the crucible of the sintered material, repeat the above-mentioned sintering process. Take out the prepared material from the crucible, place it in an iridium gold crucible for crystal growth, and grow C:Cu:Al by pulling method 2 o 3 crystals. A sapphire crystal rod with a direction is selected as the seed crystal, and the crystal growth is carried out in an Ar gas environment. The crystal pulling speed is 1.2mm / h, the rotation speed is 15rpm, and the growth of the convex interface of the crystal is controlled. After loading the furnace → vacuuming → filling Ar gas → heating th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relate to a carbon-copper double-doped sapphire crystal and a preparing method thereof. The chemical formula of the crystal can be expressed as Cx(CuO)y(Al2O3)1-x-y, wherein 0.01wt%<=x<=1wt%, 0.01wt%<=y<=0.5 wt%, and x and y represents weight percentages. A melt method is adopted in growth of the carbon-copper double-doped sapphire crystal. The carbon-copper double-doped sapphire crystal can emit various kinds of colored light within the range from near-infrared waveband to the purple light waveband under the action of ultraviolet band pumping light. The crystal can be used for the fields of thermoluminescence dose detection, colour-center lasers outputting laser (continuous laser, pulse laser and tuning laser) within the range from near-infrared waveband to the purple light waveband and light-emitting display of corresponding wavebands.

Description

technical field [0001] The invention relates to the fields of photofunctional materials and crystal growth, in particular to a carbon-copper double-doped sapphire crystal (chemical formula C x ·(CuO) y ·(Al 2 o 3 ) 1-x-y , abbreviated as C:Cu:Al 2 o 3 ) and its preparation method. Background technique [0002] Sapphire crystal is an extremely important basic material in the current optoelectronic industry and microelectronics industry. As a key component of the semiconductor lighting industry, it is an important substrate for blue and white LEDs. As a light-functional crystal, sapphire and doped sapphire have been researched more than a hundred years ago. The earliest industrialized crystal is chromium-doped sapphire, that is, ruby ​​(Cr:Al 2 o 3 ). In the 1950s, sapphire was found to have thermoluminescent properties, which opened the prelude to its optical functional applications. In order to improve the light-emitting properties of the crystal, the researchers d...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B29/20C30B11/04
Inventor 徐民杭寅洪佳琪王向永陈喆王亚琦
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com