Preparation method of submicron spherical silica powder

Abstract

The present invention is a preparation method of submicron spherical silica powder, which uses silicon-containing inorganic compound powder as a raw material, and the ratio of D90 to D10 is less than 15; Using oxygen or air as the carrier gas, liquefied natural gas as the combustible gas, and oxygen as the combustion aid, the liquefied natural gas and oxygen are respectively introduced into the combustion furnace and ignited. The raw materials enter the combustion furnace under the protection of the carrier gas and are spheroidized to obtain Silica powder with average particle size D50=0.3‑3μm. The silicon dioxide micropowder prepared by the invention has a high sphericity and can obtain an average particle diameter D50=0.3-3 μm, so the filling amount and fluidity are good, the preparation method is simple, and the preparation process is safe and environment-friendly.

Description

Technical field [0001] The invention relates to a method for preparing silicon dioxide, in particular to a method for preparing submicron spherical silicon dioxide powder using silicon-containing inorganic compound powder as a raw material. Background technique [0002] With the development of electronic equipment in the direction of miniaturization and thinning, the particle size of the filler for semiconductor packaging is expected to be smaller and smaller. In order to improve the filling amount and fluidity of the filler in the semiconductor packaging, it is necessary to prepare submicron fillers with high sphericity. [0003] In the prior art: The patent No. 200410012854.8 is based on the reaction of silicate or alkaline silica sol with acid, stirring, standing and aging, then separating, washing and drying to obtain a particle size of 5μm -10nm submicron and nanometer Spherical silica powder; [0004] The patent with application number 201410015493.6 is based on organosilicate...

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Problems solved by technology

[0007] The first two patents belong to the reaction in the solution. The organic matter, acid, alkali and the waste materials and waste water produced are relatively polluting to the environment. They are not suitable for large-scale production and do not meet the current environmental protection requirements. The third patent product is spherical Carbon, one of the raw materials used, is easily mixed into SiO gas, resulting in a decrease in product purity, and the conductivity of carbon causes serious failure of semiconductor packaging. The fourth patent uses metal silicon to prepare submicron spherical silica powder. During the process Explosion will occur, the temperature will rise sharply, and the requirements for equipment are high. At the same time, it will also cause dust explosion, and the safety is poor.