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Solar cell and manufacturing method thereof

A technology of solar cells and panels, applied in the field of solar cells, which can solve the problems of inability to fully absorb sunlight and the inability to utilize silicon solar cells, and achieve the effect of high power and increased short-circuit current value

Active Publication Date: 2016-03-16
东莞市喆锠实业有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the fixed band gap (1.12eV) of silicon semiconductors, traditional crystalline silicon solar cells cannot completely absorb and convert natural sunlight energy
The energy in the solar infrared spectrum region that reaches the ground accounts for about 50% of the entire solar spectrum energy, but only sunlight with a wavelength of less than 1100nm can achieve photoelectric conversion in silicon crystals, infrared light with a wavelength greater than 1100nm and ultraviolet light with a wavelength less than 400nm are both Cannot be utilized by silicon solar cells

Method used

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  • Solar cell and manufacturing method thereof
  • Solar cell and manufacturing method thereof
  • Solar cell and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] 1. Preparation of YVO 4 :Eu 3+ ,Sr 2+ Nano phosphor

[0015] (1) Add 1.2mmolNa 3 VO 4 12H 2 O was dissolved in a mixed solution containing 5ml ethylene glycol and 2ml distilled water; (2) The above solution was ultrasonically stirred (80KHz ultrasonic vibration and 300r / min centrifugal speed stirring) and added dropwise with a certain proportion of 1.5mmol Y ( NO 3 ) 3 ·6H 2 O,Eu(NO 3 ) 3 ,Sr(NO 3 ) 2 (0.9:0.03:0.07) in 8ml of ethylene glycol solution, then ultrasonically stirred (80KHz ultrasonic vibration and 300r / min centrifugal speed stirring) for 10min until the solution was clear, then added 20ml of distilled water; (3) Pour the reaction solution into a volume of 50ml In a polytetrafluoroethylene-lined autoclave, in a vacuum environment, 200 o C under heat preservation reaction 1h, down to 150 o C under insulation reaction 1h, after the end of the reaction, cooled to room temperature. The resulting suspension was poured out, centrifuged and washed 3...

Embodiment 2

[0023] On the basis of embodiment 1, the YVO in the step 3 4 :Eu 3+ ,Sr 2+ with YVO 4 :Eu 3+ , Bi 3+ The weight ratio is changed to 1:0.5, and the rest are the same as in Example 1.

Embodiment 3

[0025] On the basis of embodiment 1, the YVO in the step 3 4 :Eu 3+ ,Sr 2+ with YVO 4 :Eu 3+ , Bi 3+ The weight ratio was changed to 1:0.001, and the rest were the same as in Example 1.

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Abstract

The invention discloses a solar cell. The silicon-based solar cell is composed of a silicon-based solar panel, transparent glass covering the silicon-based solar panel and a light conversion glue layer between the silicon-based solar panel and the transparent glass, wherein the light conversion glue layer is an ethyl vinyl acetate transparent polymer filled with a red fluorescent compound and NaYF4:Yb3+, Er3+ nanophosphors; and the red fluorescent compound is YVO4:Eu3+, Sr2+@YVO4:Eu3+, Bi3+ or YVO4:Eu3+, Sr2+@YVO4:Eu3+, and Bi3+@Ag@SiO2 red fluorescent compound. The invention also discloses a silicon-based solar cell manufacturing method. The solar cell adopts the nanoscale red fluorescent compound and the NaYF4:Yb3+, Er3+ nanophosphors, and possibilities are created for realizing high-efficiency silicon-based solar cells. The invention also provides a solar cell manufacturing method.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a solar cell and a preparation method thereof. Background technique [0002] The design of silicon-based solar cells began in the mid-20th century, more specifically in the 1960s, when the near-Earth space was being actively exploited. Active advocates of silicon-based solar cells are scientists and engineers in the United States, Soviet Russia, and Japan. These initial research results are cataloged in monographs (please refer to "Semiconductor Radiative Energy Conversion", page 408, Moscow, Foreign Literature Publishing House, 1959). According to the original classification, the following divisions were made: 1. Photoelectric radiation energy converter; 2. Thermoelectric radiation energy converter; and 3. Semiconductor electromagnetic radiation converter. [0003] Theoretical calculations show that the limit photoelectric conversion rate of traditional silicon cells is 29%, so it i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/055H01L31/048
CPCY02E10/52H01L31/055H01L31/0481
Inventor 严梅霞
Owner 东莞市喆锠实业有限公司
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