Controllable method for preparing orthogonal-phase stannous sulfide two-dimensional monocrystalline nanosheet

A single crystal nano, stannous sulfide technology, applied in chemical instruments and methods, single crystal growth, single crystal growth and other directions, can solve the problems of uneven SnS morphology, reduced carrier mobility, and small nanosheet area. , to achieve the effect of low synthesis cost, easy development and application, and good repeatability

Active Publication Date: 2016-03-23
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For example, the exfoliation method, although high-quality SnS single crystal nanosheets can be obtained, but the repeatability of this method is poor, the area of ​​the prepared nanosheets is relatively small, th...

Method used

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  • Controllable method for preparing orthogonal-phase stannous sulfide two-dimensional monocrystalline nanosheet
  • Controllable method for preparing orthogonal-phase stannous sulfide two-dimensional monocrystalline nanosheet
  • Controllable method for preparing orthogonal-phase stannous sulfide two-dimensional monocrystalline nanosheet

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] (1) Preparation of fluorine phlogopite sheet substrate:

[0040] 1) Use scissors to cut the mica sheet into small rectangular pieces with a size of 2cm*4cm.

[0041] 2) Cleavage the fluorophlogopite sheet naturally into two pieces from the middle with fine tweezers, and use the newly split side as the growth substrate.

[0042] (2) Place the fluorine phlogopite sheet substrate sequentially on the downstream of the heating center of the tube furnace, 8-20cm away from the center of the heating source. Weigh 0.1 g of high-purity SnS powder (purity not less than 99%) into a ceramic boat, and then place the ceramic boat in the heating zone of the tube furnace.

[0043] (3) Turn on the mechanical pump to evacuate. When the pressure in the tube furnace cavity drops to 0.1Pa, fill in high-purity argon to bring the pressure in the tube furnace cavity back to 80 Torr, and keep the argon flow rate at 60 sccm.

[0044] (4) The heating center of the tube furnace is heated to 600° ...

Embodiment 2

[0052] (1) Preparation of fluorine phlogopite sheet substrate:

[0053] 1) Use scissors to cut the mica sheet into small rectangular pieces with a size of 2cm*4cm.

[0054] 2) Cleavage the fluorophlogopite sheet naturally into two pieces from the middle with fine tweezers, and use the newly split side as the growth substrate.

[0055] (2) Place the fluorine phlogopite sheet substrate sequentially on the downstream of the heating center of the tube furnace, 8-20cm away from the center of the heating source. Weigh 0.1 g of high-purity SnS powder (purity not less than 99%) into a ceramic boat, and then place the ceramic boat in the heating zone of the tube furnace.

[0056] (3) Turn on the mechanical pump for vacuuming. When the pressure in the tube furnace chamber drops to 0.1 Pa, fill in high-purity argon to bring the pressure in the tube furnace chamber back to 80 Torr, and keep the argon flow rate at 60 sccm.

[0057] (4) The heating center of the tube furnace is heated to ...

Embodiment 3

[0061] (1) Preparation of fluorine phlogopite sheet substrate:

[0062] 1) Use scissors to cut the mica sheet into small rectangular pieces with a size of 2cm*4cm.

[0063] 2) Cleavage the fluorophlogopite sheet naturally into two pieces from the middle with fine tweezers, and use the newly split side as the growth substrate.

[0064] (2) Place the fluorine phlogopite sheet substrate sequentially on the downstream of the heating center of the tube furnace, 8-20cm away from the center of the heating source. Weigh 0.1 g of high-purity SnS powder (purity not less than 99%) into a ceramic boat, and then place the ceramic boat in the heating zone of the tube furnace.

[0065] (3) Turn on the mechanical pump to evacuate. When the pressure in the tube furnace chamber drops to 0.1Pa, fill in high-purity argon to bring the pressure in the tube furnace chamber back to 300 Torr, and keep the argon flow rate at 80 sccm.

[0066] (4) The heating center of the tube furnace is heated to 80...

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Abstract

The invention discloses a controllable method for preparing an orthogonal-phase stannous sulfide (SnS) two-dimensional monocrystalline nanosheet. The method includes the steps that a substrate is arranged on the downstream of a heating center of a horizontal tubular furnace and is 8-20 cm away from the heating center, SnS powder is placed in a high-temperature-resistant container, and the container is placed in the heating center of the horizontal tubular furnace; the tubular furnace is vaccumized, when the pressure intensity in the furnace is reduced to 0.1 Pa, inactive gas is injected into the furnace so that the pressure intensity in the tubular furnace can be 20-300 Torr again, and the flow speed of the gas is kept between 20 sccm to 200 sccm; the temperature of the heating center of the horizontal tubular furnace is raised to 600-800 DEG C, reaction time is 5-30 min, the substrate is taken out after the temperature in a cavity of the tubular furnace is naturally lowered to room temperature, and the stannous sulfide two-dimensional monocrystalline nanosheet grows on the surface of the substrate. The method is easy to operate, low in cost and high in controllability. Obtained SnS has the advantages of being large in size, good in uniformity and high in crystallinity, and the method has important research value and wide application prospects in the fields of field effect transistors, photoelectric detectors, photocatalytic hydrogen generation, lithium ion batteries and the like.

Description

technical field [0001] The invention relates to the field of two-dimensional semiconductor technology. More specifically, it relates to a method for the controllable preparation of orthorhombic stannous sulfide (SnS) two-dimensional single-crystal nanosheets. Background technique [0002] Van der Waals crystal is a new type of material emerging in recent years. Its remarkable feature is that the molecular layers are bound by strong covalent bonds, while the molecular layers are linked by weaker Van der Waals forces. together. This feature makes it easy for such materials to form ultra-thin two-dimensional structures, and their thickness can even reach the thickness of a single molecular layer or several molecular layers. The ultra-thin two-dimensional structure and atomic-level smooth plane make it more conducive to electrostatic regulation than bulk materials, which is conducive to the development of electronic devices with shorter channels and smaller gates, and ultimate...

Claims

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Application Information

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IPC IPC(8): C30B29/46C30B29/64C30B23/00
CPCC30B23/00C30B29/46C30B29/64
Inventor 孟祥敏夏静李玄泽朱丹丹王磊
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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