si/ge superlattice quantum cascade laser and its preparation method

Abstract

The invention discloses a Si / Ge superlattice quantum cascade laser and a preparation method thereof. The laser successively comprises a silicon substrate, an Si0.5Ge0.5 buffer layer, Ge / Si superlattice and SiO2 from bottom to top; aluminum electrodes are deposited on the top of the Si / Ge superlattice and on the Si0.5Ge0.5 buffer layer; the thickness of the Si0.5Ge0.5 buffer layer is 300 nm; the Si0.5Ge0.5 buffer layer is a Ge / Si superlattice structure formed by 5nm silicon and 5nm germanium growing interactively; the Ge / Si proportion of the Si0.5Ge0.5 buffer layer is 1:1. The Si / Ge superlattice quantum cascade laser is compatible with a CMOS process, meets the germanium light source demand for light of different wavelengths, has the characteristics of higher photoelectric conversion efficiency and light stability, and simple and convenient processing, and provides a concrete structure and enforcement scheme for realizing an on-chip light source.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronics, in particular to a Si / Ge superlattice quantum cascade laser and a preparation method thereof. Background technique [0002] With the increasing technical requirements, the limit of the microfabrication of information processing hardware began to appear, which constrains the development of technology. In the past decades of development, microelectronics technology has been progressing according to Moore's law. The most notable feature of progress is that the size of the process is getting smaller and smaller, the degree of integration is getting higher and higher, and the cost is getting lower and lower. However, as the size of the microelectronics process advances to the nanometer level, the bottlenecks brought about by various physical effects are becoming more and more obvious. In order to break through the bottleneck, researchers have focused on the field of combining microelectr...

AI Technical Summary

Problems solved by technology

This creates stability issues and is not conducive to industrial mass production and manufacturing

Epitaxial III-V lasers on silicon wafers are limited in lifetime and their fabrication process is quite complex

Limitations when bonding III-V lasers to silicon due to mismatch issues between silicon and III-V materials

Furthermore, the throughput of III-V lasers is quite low compared to silicon CMOS technology

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