Thin film transistor substrate and manufacturing method thereof

Abstract

The invention provides a thin film transistor substrate and a manufacturing method thereof. The method comprises the steps that a gate electrode is formed on the substrate; a gate insulation layer is formed on the substrate to cover the gate electrode; a semiconductor layer is formed on the gate insulation layer; the semiconductor layer is converted into plasma to form an ohmic contact layer with the predetermined thickness; a metal layer is formed on the gate insulation layer to cover the ohmic contact layer; patterning is conducted on the metal layer and the ohmic contact layer to form a source electrode and a drain electrode and expose the area, between the source electrode and the drain electrode, of the semiconductor layer; a passivation layer is formed on the source electrode, the drain electrode and the exposed semiconductor layer; a contact hole used for exposing the drain electrode is formed in the passivation layer; a pixel electrode is formed on the passivation layer and connected to the drain electrode through the contact hole. According to the method for manufacturing the thin film transistor substrate, additional arrangement of an etching barrier layer between the thin film transistor substrate and the source electrode and the drain electrode is not needed, so that the production cost is reduced, and the manufacturing technology is simplified.

Description

technical field [0001] The invention belongs to the technical fields of wafer manufacturing and flat panel display. Specifically, it relates to a thin film transistor (TFT) substrate and a manufacturing method thereof. Background technique [0002] Generally, the semiconductor layer in a thin film transistor (TFT) is composed of a metal oxide film, and the metal oxide film is very sensitive to acid, and even a weak acid can quickly corrode the oxide semiconductor layer, thereby etching the oxide semiconductor layer. The oxide semiconductor layer itself is easily damaged when the source and drain electrodes are metal. [0003] In addition, since the oxide semiconductor layer is relatively thin (usually between 30nm and 50nm), even with hydrofluoric acid (HF) diluted at a concentration of 500:1, it only takes a few seconds to etch the oxide semiconductor layer. In the prior art, an etch stop layer (ESL) is usually added between the oxide semiconductor layer and the source an...

AI Technical Summary

Problems solved by technology

In the prior art, an etch stop layer (ESL) is usually added between the oxide semiconductor layer and the source and drain electrodes to protect the oxide semiconductor layer at the bottom from the etching used to form the source and drain electrodes. However, it is necessary to add an additional photolithography process to make an additional layer of etching barrier layer. A photolithography process includes film formation, exposure, development, etching, stripping and other processes, which will greatly increase the production cost and reduce the production yield. Rate

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