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A semiconductor device and its manufacturing method and electronic device

A manufacturing method and semiconductor technology, applied in the direction of semiconductor devices, electric solid devices, manufacturing microstructure devices, etc., can solve the problems of incomplete Ge consumption, decline, and influence on electrical connection performance, and achieve the effect of improving reliability and overall performance

Active Publication Date: 2017-05-10
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to reduce the cost, it can be considered not to use the passivation layer and directly form the aluminum pad. However, the problem faced by this method is that during the Al-Ge alloy bonding process, Al is prone to elongation during bonding (such as figure 2 shown), the extended part of the aluminum may affect the work of the MEMS micromechanical movable structure, thereby causing damage to the device or degradation of the overall performance
[0006] Another design scheme is to form a closed cavity through Al / Ge-Al bonding, and at the same time to consume all Ge in the alloy bonding process to form a low-resistance electrical connection, but due to the extension of Al Existence may lead to incomplete consumption of Ge and affect electrical connection performance

Method used

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  • A semiconductor device and its manufacturing method and electronic device
  • A semiconductor device and its manufacturing method and electronic device
  • A semiconductor device and its manufacturing method and electronic device

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Experimental program
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Embodiment 1

[0050] Below, refer to Figure 3A-3D and Figure 4 The method of the embodiment of the present invention is described in detail. in, Figure 3A-3D It shows a schematic cross-sectional view of the device obtained by sequentially implementing the method according to Embodiment 1 of the present invention; Figure 4 A flow chart showing the sequential implementation steps of the method in Embodiment 1 of the present invention is shown.

[0051] First, if Figure 3A As shown, a device wafer 300 is provided, with bonding pads 301 formed on the surface of the device wafer 300 .

[0052] The device wafer 300 includes a semiconductor substrate and components, and the semiconductor substrate may be at least one of the materials mentioned below: silicon, silicon-on-insulator (SOI), silicon-on-insulator (SSOI), Silicon germanium on insulator (S-SiGeOI), silicon germanium on insulator (SiGeOI) and germanium on insulator (GeOI) are laminated. The components are integrated circuits for...

Embodiment 2

[0075] An embodiment of the present invention provides a semiconductor device fabricated by the method in Embodiment 1, a semiconductor device comprising:

[0076] A device wafer, where pads are formed on the device wafer, and side walls are formed on the side walls of the pads;

[0077] Specifically, the device wafer includes a semiconductor substrate and components, and the semiconductor substrate can be at least one of the materials mentioned below: silicon, silicon-on-insulator (SOI), silicon-on-insulator (SSOI) ), silicon germanium on insulator (S-SiGeOI), silicon germanium on insulator (SiGeOI) and germanium on insulator (GeOI), etc. The components are integrated circuits formed by interconnecting metal-oxide-semiconductor field effect transistors (MOSFETs) and other devices such as capacitors and resistors through alloys, and can also be common semiconductor devices in the field of other integrated circuits, such as dual Pole devices or power devices or micro-mechanica...

Embodiment 3

[0086] The present invention also provides an electronic device, which includes the semiconductor device described in the second embodiment.

[0087] The electronic device also has the above advantages due to the excellent performance of the included semiconductor device.

[0088] The electronic device can be any electronic product or equipment such as mobile phone, tablet computer, notebook computer, netbook, game console, TV, VCD, DVD, navigator, camera, video camera, recording pen, MP3, MP4, PSP, etc. It is an intermediate product with the above-mentioned semiconductor device, for example: a mobile phone motherboard with the integrated circuit, etc.

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Abstract

The invention provides a semiconductor device, a manufacturing method thereof and an electronic device. The manufacturing method comprises the following steps: providing a device wafer, and forming a pad on the device wafer; forming side walls on both sides of the pad; providing a cap sealing wafer, wherein bonding layers and grooves positioned among the bonding layers are formed on the cap sealing wafer; and performing a bonding process in order to bond the bonding layers on the cap sealing wafer together with the pad on the device wafer. According to the manufacturing method provided by the invention, aluminum extends transversely after aluminum-germanium bonding layers are molten and pressed in a bonding process, but the extension of aluminum can be prevented in the presence of the side walls on both sides of the aluminum pad, so that the influence on the device in a sealed cavity is prevented. In particular, a movable structure in a micro-mechanical structural area in the sealed cavity is prevented from being influenced, so that the reliability and overall performance of the device are enhanced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device, a manufacturing method thereof, and an electronic device. Background technique [0002] Micro-Electro-Mechanical Systems (MEMS for short) technology is known as a revolutionary high-paying technology in the 21st century, and it is an ingenious combination of microelectronics and micromechanics. Micro-electro-mechanical systems (MEMS) technology will have a revolutionary impact on human life in the future. The basic technologies of MEMS mainly include silicon anisotropic etching technology, silicon / bonding technology, surface micro-mechanical technology, LIGA technology, etc., which have become an indispensable core technology for the development and production of MEMS products. [0003] In the silicon-based MEMS processing technology, some products such as accelerometers, gyroscopes, etc. need to protect the structure of the micromechanical device....

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00B81B7/00
Inventor 陈福成
Owner SEMICON MFG INT (SHANGHAI) CORP