Unlock instant, AI-driven research and patent intelligence for your innovation.

Preparation method for high-temperature-resistant flexible thermoelectric device based on graphene

A thermoelectric device, high-temperature flexible technology, applied in the manufacture/processing of thermoelectric devices, thermoelectric device node lead-out materials, etc., can solve the problems of high-temperature-resistant flexible inorganic thermoelectric materials and devices that cannot be realized, and achieve fast preparation speed, Conducive to production promotion and simple assembly process

Active Publication Date: 2016-04-13
DONGHUA UNIV
View PDF3 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Grossman et al. predicted from a theoretical point of view that graphene has great advantages as a thermoelectric energy conversion material (J.Y.Kim, et al. NanoLett. 2015, 15, 2830), and Hossain et al. studied in detail the excellent performance of single-layer graphene as a thermoelectric material (M.S. Hossain, etal.Sci.Rep.2015,5,11297), however, the high-temperature-resistant flexible inorganic thermoelectric materials and devices based on macroscopic graphene films have not been realized

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method for high-temperature-resistant flexible thermoelectric device based on graphene
  • Preparation method for high-temperature-resistant flexible thermoelectric device based on graphene

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] (i) Disperse 0.5g of graphite oxide in 50mL of deionized water, mechanically stir for 15min, ultrasonicate in a water bath for 60min, and probe ultrasonically for 30min to obtain a uniformly dispersed graphene oxide gel;

[0031] (ii) Prepare graphene oxide film by scraping coating on 1000-mesh sandpaper substrate with automatic scraping machine, adjust the thickness of scraping coating to 50 μm, dry at room temperature for 6 hours, freeze with liquid nitrogen for 120 seconds, freeze-dry for 24 hours, and peel off from the substrate to obtain Self-supporting three-dimensional graphene oxide film;

[0032] (iii) cutting the obtained film in (ii) into rectangular strips of 7×90 mm, and annealing at 500° C. for 30 min at a flow rate of 15 mL / min in an ammonia gas atmosphere to obtain an n-type graphene conductive film material;

[0033] (iv) cutting the obtained film in (ii) into a rectangular strip of 7 × 90mm, and reducing it for 1h in 55% hydroiodic acid at room tempera...

Embodiment 2

[0039] (i) Disperse 1.5g of graphite oxide in 100mL of deionized water, mechanically stir for 15min, ultrasonicate in a water bath for 80min, and probe ultrasonically for 60min to obtain a uniformly dispersed graphene oxide gel;

[0040] (ii) Prepare graphene oxide film by scraping coating on 1000-mesh sandpaper substrate with automatic scraper coating machine, adjust the thickness of scraping coating to 100 μm, dry at room temperature for 8 hours, freeze with liquid nitrogen for 120 seconds, freeze-dry for 15 hours, and peel off from the substrate to obtain Self-supporting three-dimensional graphene oxide film;

[0041] (iii) cutting the obtained film in (ii) into rectangular strips of 10×100 mm, and annealing at 600° C. for 20 min at a flow rate of 15 mL / min in an ammonia gas atmosphere to obtain an n-type graphene conductive film material;

[0042] (iv) cutting the obtained film in (ii) into a rectangular strip of 10 × 100mm, and reducing it for 1.5h in 55% hydroiodic acid ...

Embodiment 3

[0046] (i) Disperse 0.75g of graphite oxide in 50mL of deionized water, mechanically stir for 15min, ultrasonicate in a water bath for 60min, and ultrasonically probe for 45min to obtain a uniformly dispersed graphene oxide gel;

[0047](ii) Prepare a graphene oxide film by scraping coating on a copper foil substrate with an automatic scraper coating machine, adjust the scraping thickness to 30 μm, dry at room temperature for 8 hours, freeze with liquid nitrogen for 60 seconds, freeze-dry for 15 hours, peel off from the substrate, and obtain a self- Supported three-dimensional graphene oxide film;

[0048] (iii) cutting the obtained film in (ii) into rectangular strips of 7×90 mm, and annealing at 800° C. for 10 min at a flow rate of 10 mL / min in an ammonia gas atmosphere to obtain an n-type graphene conductive film material;

[0049] (iv) cutting the obtained film in (ii) into a rectangular strip of 7 × 90mm, and reducing it for 2h in 55% hydroiodic acid at room temperature t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a preparation method for a high-temperature-resistant flexible thermoelectric device based on graphene. The preparation method comprises the steps of dispersing graphite oxide into deionized water, and performing mechanical stirring, water bath ultrasonic processing, and probe ultrasonic processing to obtain graphene oxide gel; then blade coating a substrate with the graphene oxide gel, and performing drying, liquid nitrogen freezing, and peeling off to obtain a self-supported three-dimensional graphene oxide thin film; then cutting the thin film into rectangular strips, and performing annealing under an ammonia atmosphere to obtain an n type graphene conductive thin film material; enabling the rectangular strips to be subjected to a reduction reaction in hydroiodic acid to obtain a p type graphene conductive thin film material; and alternatively fixing the graphene conductive thin film materials on a flexible substrate to be connected in series to obtain the flexible thermoelectric device. The preparation method is simple in process and low in cost; the prepared flexible thermoelectric device has the excellent flexibility of an organic thermoelectric material as well as has the high-temperature-resistant characteristics of an inorganic thermoelectric material; and therefore, the prepared flexible thermoelectric device can be applied to waste-heat recycling of industrial machines having complex shapes, such as curved surfaces and the like.

Description

technical field [0001] The invention belongs to the field of preparation of thermoelectric devices, in particular to a method for preparing graphene-based high-temperature-resistant flexible thermoelectric devices. Background technique [0002] The energy crisis has always been the core problem that plagues human development. However, in the process of energy utilization, most of the energy is lost in the environment in the form of waste heat. Therefore, improving the utilization efficiency of existing energy is very important for alleviating the energy crisis and reducing environmental pollution. The emergence of thermoelectric materials provides a feasible solution for the effective utilization of waste heat in industries and other fields. Traditional inorganic thermoelectric materials have excellent conversion efficiency, but they have been criticized for their rigidity, bulkiness, difficulty in bending, harsh processing conditions, high cost (containing rare elements su...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/34H01L35/22H10N10/01H10N10/855
CPCH10N10/855H10N10/01
Inventor 李耀刚郭洋王宏志张青红侯成义
Owner DONGHUA UNIV