A kind of perovskite mica photovoltaic material and preparation method thereof

A photovoltaic material and perovskite technology, applied in photovoltaic power generation, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of low light absorption by the perovskite absorber layer and low photoelectric conversion rate of solar cells, etc. To achieve the effects of excellent crystal form, improved transmission speed, and strong electrical insulation

Active Publication Date: 2017-12-01
毛志岳
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The disadvantages of the existing technology are: the perovskite absorbing layer does not have a high light absorption, and the photoelectric conversion rate of the assembled solar cell is not high.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] (1) Preparation of TiO 2 dense layer

[0030] Screen printing a layer of TiO on FTO glass 2 Thin film layer, after heating at 450°C for 30 minutes, a dense layer with a thickness of 50nm is obtained;

[0031] (2) Preparation of nano mica powder

[0032] The mica particles were vacuum-dried, the drying temperature was 105°C, and the drying time was 25h. The dried mica was ground and pulverized in a high-speed pulverizer for 7 hours. Finally, 400nm nanoscale mica particles are obtained;

[0033] (3) Preparation of nano-mica mesoporous layer

[0034] The mica particles obtained in step (2) and isopropanol were made into a slurry at a weight ratio of 1:3.5, spin-coated onto the dense layer obtained in step (1), dried at 100°C, and then transferred to a muffle furnace for Perform annealing treatment for 30 minutes at a temperature of 350°C to obtain a nano-mica mesoporous layer attached to the dense layer;

[0035] (4) Preparation of perovskite-mica photovoltaic mater...

Embodiment 2

[0039] Step (1) is the same as above;

[0040] (2) Preparation of nano mica powder

[0041] The mica particles were vacuum-dried, the drying temperature was 100°C, and the drying time was 25h. The dried mica was ground and pulverized in a high-speed pulverizer for 6 hours. Finally, 450nm nanoscale mica particles are obtained;

[0042] (3) Preparation of nano-mica mesoporous layer

[0043]The mica particles obtained in step (2) and isopropanol were made into a slurry at a weight ratio of 1:3.2, spin-coated onto the dense layer obtained in step (1), dried at 100°C, and then transferred to a muffle furnace for Perform annealing treatment for 30 minutes at a temperature of 350°C to obtain a nano-mica mesoporous layer attached to the dense layer;

[0044] (4) Preparation of perovskite-mica photovoltaic materials

[0045] Spin-coat the nano-mica mesoporous layer obtained in step (3) with a concentration of 1.0mol / L lead iodide, lead chloride or lead bromide solution, and then ...

Embodiment 3

[0048] Step (1) is the same as above;

[0049] (2) Preparation of nano mica powder

[0050] The mica particles were vacuum-dried, the drying temperature was 80°C, and the drying time was 30h. The dried mica was ground and pulverized in a high-speed pulverizer for 8 hours. Finally, 300nm nanoscale mica particles are obtained;

[0051] (3) Preparation of nano-mica mesoporous layer

[0052] The mica particles obtained in step (2) and isopropanol were made into a slurry at a weight ratio of 1:4, spin-coated onto the dense layer obtained in step (1), dried at 200°C, and then transferred to a muffle furnace for Annealing for 60 minutes at a temperature of 600°C to obtain a nano-mica mesoporous layer attached to the dense layer;

[0053] (4) Preparation of perovskite-mica photovoltaic materials

[0054] Spin-coat the nano-mica mesoporous layer obtained in step (3) with a concentration of 1.2mol / L lead iodide, lead chloride or lead bromide solution, and then 3 NH 3 After soakin...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a perovskite-mica photovoltaic material and a preparation method thereof. The invention adopts the nano-mica material as the inert support of the perovskite light-absorbing material, prevents the support material from interfering with electron activities, forces electrons to quickly pass through the perovskite absorber layer, and significantly increases the electron transmission speed. By using the perovskite-mica photovoltaic material provided by the present invention to assemble solar cells, the photoelectric conversion efficiency of the solar cells can reach up to 13.8%.

Description

technical field [0001] The invention relates to the technical field of photovoltaic materials, in particular to a perovskite-mica photovoltaic material and a preparation method thereof. Background technique [0002] After more than 60 years of development of solar cell materials, there are many different types. Mainly include monocrystalline / polycrystalline silicon, gallium arsenide, cadmium telluride, copper indium gallium selenide, dye sensitization, etc. At present, only monocrystalline / polycrystalline silicon solar cells have been widely used, and other types of solar cells are limited in practical application due to the shortcomings of scarce raw materials, toxicity, low efficiency, and poor stability. However, the production cost of monocrystalline / polycrystalline silicon solar cells is high, and the search for new solar cells is still a research hotspot. [0003] Perovskite-type organometallic halide materials have excellent photoelectric properties and are easy to ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K71/12H10K85/113H10K30/00Y02E10/549
Inventor 饶琳
Owner 毛志岳
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products