IGBT (insulated gate bipolar transistor) based bidirectional solid-state switch and switching method therefor

Abstract

The invention relates to an IGBT (insulated gate bipolar transistor) based bidirectional solid-state switch and a switching method therefor. The bidirectional solid-state switch comprises an IGBT module turn-off absorption circuit, an IGBT module main circuit, an IGBT driving module and a matched control system that are connected in sequence, wherein the IGBT module main circuit comprises at least a pair of IGBT modules connected in series reversely to form a bidirectional through-flow circuit; and the two ends of the circuit are the two terminals of the bidirectional solid-state switch. The IGBT based bidirectional solid-state switch is a solid-state direct current switch device with a bidirectional through-flow function; and in addition, the IGBT based bidirectional solid-state switch has good thermal dissipation function and driving function, and a perfect protection function.

Description

technical field [0001] The invention belongs to the technical field of power electronics, and in particular relates to a topology of a bidirectional solid-state switch technology based on an IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor), and a switching method thereof. Background technique [0002] With the development of multi-terminal DC transmission and distribution technology and the continuous increase of the capacity of modern power systems, once a short-circuit fault occurs in the power system, the short-circuit current will rapidly increase to more than the maximum value that the power electronic devices can withstand, thus causing the entire power system Major damage. DC circuit breaker, as a switchgear carrying the normal current and various fault currents of the DC operating branch, can improve the reliability of the DC power distribution system, and is also the basis for the operation, control and protection of the DC transmission an...

AI Technical Summary

Problems solved by technology

Since the parameter design of the LC circuit is closely related to the turn-off current value of the main thyristor, the parameters of the LC circuit that can normally break the short-circuit fault current cannot quickly complete the breaking of the small current of the system

In addition, the parameters of the LC circuit determine the reverse voltage duration after the main thyristor current is zero. In order to provide sufficient reverse voltage duration to realize the reliable shutdown of the main thyristor, it is necessary to reduce the shutdown current or increase the initial storage capacity of the capacitor. Energy, which will reduce the breaking capacity of the circuit breaker, or make it larger

However, the direct breaking solid-state circuit breaker uses semiconductor devices that can be turned off to quickly break the short-circuit current. When the devices are connected in series and parallel, it is difficult to reliably complete the breaking of the large fault current, which hinders the further development of the circuit breaker in the direction of high voltage and high current.

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