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Organic Photosensitive Devices with Exciton-Blocking Charge Carrier Filtering Layers

An electronic device and organic technology, applied in the field of organic photosensitive optoelectronic devices, can solve problems such as hindering device performance

Inactive Publication Date: 2018-09-21
RGT UNIV OF MICHIGAN +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these materials can hamper device performance if they absorb in the same spectral region as the active layer material

Method used

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  • Organic Photosensitive Devices with Exciton-Blocking Charge Carrier Filtering Layers
  • Organic Photosensitive Devices with Exciton-Blocking Charge Carrier Filtering Layers
  • Organic Photosensitive Devices with Exciton-Blocking Charge Carrier Filtering Layers

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0153] C 60 Mix with bathocuproine (BCP) at various concentrations to form an exciton blocking electron filter layer. BCP is a wide energy gap material with ratio C 60 (singlet 1.86eV, triplet 1.55eV) high singlet (3.17eV) and triplet (2.62eV) energies and LUMO (-1.6eV), making BCP an inert dopant and preventing 60 Both energy and electron transfer. The doped C 60 : BCP films effectively block excitons while still conducting electrons. Based on these properties, the doped film acts as a buffer / filter layer, resulting in improved device performance compared to devices with other buffer layers.

[0154] Effect of BCP doping on fullerene absorption by making various volume ratios of C 60 : BCP film for research. figure 2 shows pure and doped C 60 The absorption spectrum of the film. When C 60 As the fraction decreases, the absorption weakens and approaches that of BCP. However, if figure 2 Depicted in the inset of , the decays of the two absorption peaks at 340 nm an...

Embodiment 2

[0156] The device was fabricated as follows: a glass substrate coated with patterned ITO (patterned stripe width 2mm, thickness=150±10nm; sheet resistance=20±5Ωcm-2; transmittance 84% at 550nm; courtesy of Thin Film Devices, Inc.) Clean with soap and boil in perchloroethylene, acetone and propanol (5 min each). The ITO substrate was exposed to an ozone atmosphere (UVOCS T10X10 / OES) for 10 min, and then immediately loaded into a high vacuum chamber. The deposition rate of a pure material layer is as follows: MoO x (0.02nm / s), NPD (0.1nm / s), C 60 (0.1nm / s), BCP (0.1nm / s) and Al (0.2nm / s). doped film (C 60 : BCP content by volume) deposition rate is as follows: C 60 :BCP(2:1) – codeposited C 60 (0.08nm / s): BCP (0.04nm / s); C 60 :BCP(1:1) – codeposited C 60 (0.06nm / s): BCP (0.06nm / s); C 60 :BCP(1:2) – codeposited C 60 (0.04nm / s): BCP (0.08nm / s). After organic deposition, place a mask with a stripe width of 2 mm on the N 2 down on the substrate and deposit a 100 nm Al cat...

Embodiment 3

[0164] Figure 4 The device shown in was fabricated according to the fabrication method disclosed in Example 2. Figure 4 The J-V curves of the device and the external quantum efficiency curves as a function of wavelength under one solar AM1.5G illumination are shown, and the device structure is in the inset. (x = 10 nm (D7), 20 nm (D6), and 30 nm (D5)). Table 2 provides performance data for this device.

[0165] Table 2: Device Performance Data

[0166]

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Abstract

Disclosed herein are organic photosensitive devices comprising at least one exciton blocking charge carrier filtering layer. The filter layer comprises a mixture of at least one wide gap material and at least one electron or hole conducting material. As described herein, the novel filter layer simultaneously blocks excitons and conducts target charge carriers (electrons or holes).

Description

[0001] Cross-References to Related Applications [0002] This application claims U.S. Provisional Application No. 61 / 811,570, filed April 12, 2013, U.S. Provisional Application No. 61 / 871,452, filed August 29, 2013, U.S. Provisional Application No. 61 / 871,452, filed December 5, 2013 61 / 912,051, which application is hereby incorporated by reference in its entirety. [0003] Statement Regarding Federally Funded Research [0004] Under Contract Nos. DE-SC0000957, DE-SC0001013, and DE-EE0005310 awarded by the U.S. Department of Energy and under Contract FA9550-10-1-0339 awarded by the Air Force Office of Scientific Research , the invention was accomplished with the support of the U.S. government. The government has certain rights in this invention. [0005] joint research agreement [0006] The subject matter of this disclosure was done on behalf of and / or in association with one or more of the following parties under a joint university-industry research agreement: The Rege...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H10K99/00
CPCB82Y10/00Y02E10/549H10K85/211H10K85/215H10K30/353H10K30/50H10K85/621H10K85/626H10K85/631H10K85/633H10K85/6572
Inventor 史蒂芬·R·福里斯特肖新杰拉米·D·齐默尔曼凯文·贝格曼阿努拉格·潘达布赖恩·E·拉希特马克·E·汤普森安德鲁·N·巴尔廷斯科功·祯
Owner RGT UNIV OF MICHIGAN
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