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IGBT power module used for new energy vehicle

A technology for power modules and new energy vehicles, applied in electrical components, electric solid devices, circuits, etc., can solve problems such as reducing the output performance of IGBT power modules, increasing contact thermal resistance, and increasing the difficulty of system assembly

Active Publication Date: 2016-05-18
CHINA FIRST AUTOMOBILE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] Patent 02159368.X (name of invention: semiconductor power device) describes a structure of an IGBT power module including a semiconductor chip (12), a first heat sink (13), a second heat sink (14), and a molding resin (17 ), the module adopts double-sided indirect liquid cooling, direct copper-bonded power connection and no DBC liner structure. Although this structure improves heat dissipation and connection, it increases the difficulty of system assembly, and at the same time, it needs to increase Improper assembly of heat sink and external heat sink during assembly will lead to increased contact thermal resistance and reduce the output performance of the IGBT power module

Method used

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  • IGBT power module used for new energy vehicle
  • IGBT power module used for new energy vehicle
  • IGBT power module used for new energy vehicle

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Embodiment Construction

[0025] The technical solutions of the present invention will be further described below in conjunction with the accompanying drawings.

[0026] Such as figure 1 As shown in the cross-sectional view of the IGBT power module, the IGBT power module consists of the following parts: thick copper power terminal 1, cooling substrate 2, solder layer 3, thick copper buffer pad 4, solder layer 5, solder layer 6, thick copper buffer pad 7. Binding wire 8, thermal insulation layer 9, thick copper power terminal 10, Diode (diode) chip 11, solder layer 12, thick copper buffer pad 13, solder layer 14, solder layer 15, IGBT (insulated gate bipolar Type transistor) chip 16, thick copper buffer block 17, solder layer 18, solder layer 19, heat conduction insulating layer 20, cooling substrate 21 and molding resin 22.

[0027] IGBT (insulated gate bipolar transistor) chips 16 and Diode (diode) chips 11 are connected to thick copper buffer pads 4, 7, 13, 17 through solder layers 3, 5, 6, 12, 15, ...

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PUM

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Abstract

The invention relates to an IGBT power module used for a new energy vehicle. The IGBT power module is composed of IGBT chips, Diode chips, thick copper buffer cushion blocks, power terminals, signal terminals, cooling substrates, heat conduction insulating layers and moulded resin. The IGBT chips and the Diode chips are connected with the thick copper buffer cushion blocks through solder layers. The thick copper buffer cushion blocks are connected with the thick copper power terminals through the solder layers so as to realize power connection. The thick copper power terminals are connected with the cooling substrates through the heat conduction insulating layers. An IGBT power module is formed after resin injection moulding. The IGBT power module is characterized in that single-end pins or the cooling substrates with single-end fins are disposed in double surfaces to realize double-surface direct liquid cooling of the power module, and the forced heat dissipation capability of the power module is improved; the connection between the chips and the thick copper power terminals is realized by means of the thick copper buffer cushion blocks, the heat dissipation thermal capacitance of the chips are increased, and the thermal shock resistance of the chips under limiting conditions is improved; and the IGBT power module is internally provided with insulating heat conduction sheets, and the problem of decreased module performance or module damages caused by increased thermal resistance due to poor contact or vibration drop of external insulating sheets is eliminated.

Description

technical field [0001] The invention relates to the field of power semiconductor packaging and power modules, in particular to a high-power IGBT power module with a new packaging structure for new energy vehicles. Background technique [0002] Facing the increasingly depleted oil resources and the huge pressure of environmental protection, new energy vehicles have shown great advantages and broad development prospects. [0003] The rapid development of new energy vehicles has driven the rapid application of vehicle inverters. The key core component in the automotive inverter is the IGBT power module, which realizes electric power conversion through switching action, converts DC power into AC power, or converts AC power into DC power. [0004] IGBT (InsulatedGateBipolarTransistor), insulated gate bipolar transistor, is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor), ...

Claims

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Application Information

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IPC IPC(8): H01L25/11H01L23/473H01L23/367H01L23/538
CPCH01L23/3672H01L23/473H01L23/538H01L25/112H01L23/3677H01L23/49537H01L25/072H01L2224/2612H01L2224/32245H01L2224/33181H01L2224/73215H01L2224/73265
Inventor 刘志强张功文彦东苏瑞涛赵慧超
Owner CHINA FIRST AUTOMOBILE
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