A new energy vehicle igbt power module

Abstract

The invention relates to an IGBT power module for a new energy vehicle, which is composed of an IGBT chip, a Diode chip, a thick copper buffer block, a power terminal, a signal terminal, a cooling substrate, a thermally conductive insulating layer and resin injection molding. The IGBT chip and The diode chip is connected to the thick copper buffer pad through the solder layer, and the thick copper buffer pad is connected to the thick copper power terminal through the solder layer to realize the power connection. IGBT power module. The IGBT power module realizes double-sided direct liquid cooling of the power module through the cooling substrate with single-ended pins or single-ended fins on both sides, which improves the forced heat dissipation capability of the power module; the connection between the chip and the thick copper power terminal is realized through the buffer block, increasing The heat dissipation capacity of the chip improves the thermal shock resistance of the chip in extreme working conditions; through the built-in insulating heat conducting sheet, it eliminates the poor contact of the external insulating sheet or the increase of thermal resistance caused by vibration and drop, which causes module performance degradation or module damage.

Description

technical field [0001] The invention relates to the field of power semiconductor packaging and power modules, in particular to a high-power IGBT power module with a new packaging structure for new energy vehicles. Background technique [0002] Facing the increasingly depleted oil resources and the huge pressure of environmental protection, new energy vehicles have shown great advantages and broad development prospects. [0003] The rapid development of new energy vehicles has driven the rapid application of vehicle inverters. The key core component in the automotive inverter is the IGBT power module, which realizes electric power conversion through switching action, converts DC power into AC power, or converts AC power into DC power. [0004] IGBT (Insulated Gate Bipolar Transistor), Insulated Gate Bipolar Transistor, is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (Bipolar Transistor) and MOS (Insulated Gate Field Effect Transistor...

AI Technical Summary

Problems solved by technology

[0009] Patent 02159368.X (name of invention: semiconductor power device) describes a structure of an IGBT power module including a semiconductor chip (12), a first heat sink (13), a second heat sink (14), and a molding resin (17 ), the module adopts double-sided indirect liquid cooling, direct copper-bonded power connection and no DBC liner structure. Although this structure improves heat dissipation and connection, it increases the difficulty of system assembly, and at the same time, it needs to increase Improper assembly of heat sink and external heat sink during assembly will lead to increased contact thermal resistance and reduce the output performance of the IGBT power module

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