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A method for metallizing the surface of a ceramic substrate

A technology of ceramic substrate and surface metal, applied in metal material coating process, superimposed layer plating, coating and other directions, can solve the problems of insufficiency, long production cycle, high defect rate, and improve the final yield and return. The effect of simplifying the plating process and simplifying the production process

Active Publication Date: 2018-07-10
江苏富乐华半导体科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The following problems are often encountered in the process of ceramic metallization: low metallization strength, poor film adhesion, low density, light transmission on the metallized surface, easy oxidation, etc.
[0004] The ceramic substrate completed by the electroplating metallization process, the follow-up production process of this product is relatively complicated and the production cycle is long, the defect rate is high, and it cannot meet the customer's requirement of a line spacing of 0.08 mm.

Method used

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  • A method for metallizing the surface of a ceramic substrate

Examples

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Effect test

Embodiment 1

[0048] S1. Titanium-tungsten-copper plating: Titanium-tungsten and copper plating are performed on the surface of the ceramic substrate (first titanium-tungsten plating, then copper plating), the processing conditions are: vacuum degree 1×10 -8 , substrate temperature 150-200°C, argon pressure 4×10 -3 torr, bias -200V, time 30min, film thickness: titanium tungsten 0.05-0.1um, copper 0.5-1um;

[0049] S2. Degreasing: put the substrate obtained in S1 into the degreasing solution at a temperature of 30°C, take it out after degreasing for 10 minutes, and rinse it with deionized water for 4 times; wherein, each 1L of degreasing agent contains 100ml of acidic degreasing agent FR, 200ml of sulfuric acid, and the rest is water ;

[0050] S3, acidification corrosion: put the substrate obtained in S2 into the corrosion solution, after acidification corrosion at room temperature for 30s, rinse with deionized water twice; wherein, each 1L corrosion solution contains 200g of sodium persul...

Embodiment 2

[0065] S1. Titanium-tungsten-copper plating: Titanium-tungsten and copper plating are performed on the surface of the ceramic substrate (first titanium-tungsten plating, then copper plating), the processing conditions are: vacuum degree 1×10 -8 , substrate temperature 150-200°C, argon pressure 4×10 -3 torr, bias -200V, time 30min, film thickness: titanium tungsten 0.05-0.1um, copper 0.5-1um;

[0066] S2. Degreasing: put the substrate obtained in S1 into the degreasing solution at a temperature of 25°C, take it out after degreasing for 5 minutes, and rinse it with deionized water for 6 times; wherein, each 1L of degreasing agent contains 80ml of acidic degreasing agent FR, 150ml of sulfuric acid, and the rest is water ;

[0067] S3, acidification corrosion: put the substrate obtained in S2 into the corrosion solution, after acidification corrosion at room temperature for 20s, rinse with deionized water for 3 times; wherein, each 1L corrosion solution contains 150g of sodium pe...

Embodiment 3

[0082] S1. Titanium-tungsten-copper plating: Titanium-tungsten and copper plating are performed on the surface of the ceramic substrate (first titanium-tungsten plating, then copper plating), the processing conditions are: vacuum degree 1×10 -8 , substrate temperature 150-200°C, argon pressure 4×10 -3 torr, bias -200V, time 30min, film thickness: titanium tungsten 0.05-0.1um, copper 0.5-1um;

[0083] S2. Degreasing: put the substrate obtained in S1 into the degreasing solution at a temperature of 35°C, take it out after degreasing for 10 minutes, and rinse it with deionized water for 5 times; wherein, each 1L of degreasing agent contains 120ml of acidic degreasing agent FR, 250ml of sulfuric acid, and the rest is water ;

[0084] S3. Acidification corrosion: put the substrate obtained in S2 into the corrosion solution, and after acidification corrosion at room temperature for 40 seconds, wash it with deionized water for 3 times; wherein, each 1L corrosion solution contains 25...

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Abstract

The invention relates to a method for surface metallization of a ceramic substrate. The method for surface metallization of the ceramic substrate specifically comprises the steps of plating of titanium, tungsten and copper, degreasing, acid corrosion, acidizing treatment, film attaching, plating of lower bottom copper, plating of circuit copper, primary nickeling, secondary nickeling, gold preplating, gold plating, film removing, etching, removal of titanium and tungsten, dewatering, and sealing. According to the method for surface metallization of the ceramic substrate, a ceramic substrate metallization film system technique is adjusted, namely an existing gold-chromium-layer metallization film system is adjusted to a titanium-tungsten-layer metallization film system, so that the production cycle of products is shortened, the final yield of the products is increased, and the requirements of customers for fine circuit boards with the circuit distance being 0.08 mm are further met.

Description

technical field [0001] The invention belongs to the technical field of ceramic substrate surface treatment technology, and in particular relates to a method for metallizing the surface of a ceramic substrate. Background technique [0002] The surface metallization of ceramic substrates can connect ceramics and metals to form composite substrates, which combines the excellent mechanical properties of ceramic materials and the excellent thermal and electrical conductivity of metal materials. It is the key technology for the production of electric vacuum ceramic devices. The following problems are often encountered in the process of ceramic metallization: low metallization strength, poor film adhesion, low density, light transmission on the metallized surface, and easy oxidation. These not only lead to a decrease in yield, but also affect product quality. Therefore, continuous research to improve the level of metallization technology is very important for improving product qual...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25D5/14C25D3/38C25D3/12C25D3/48C23C28/02C23F1/44
CPCC23C28/021C23F1/44C25D3/12C25D3/38C25D3/48C25D5/14
Inventor 施士超高小彬贺贤汉王松
Owner 江苏富乐华半导体科技股份有限公司
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