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A kind of preparation method of tetragonal phase bismuth magnesium titanate-lead titanate based piezoelectric single crystal

A technology of bismuth magnesium titanate and lead titanate, which is applied in the field of piezoelectric single crystal and its growth, can solve the problem that it is difficult to meet the requirements of the material's service temperature

Active Publication Date: 2018-05-08
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is also difficult to meet the temperature requirements of materials in many high-temperature fields

Method used

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  • A kind of preparation method of tetragonal phase bismuth magnesium titanate-lead titanate based piezoelectric single crystal

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] The high-purity raw material Bi 2 o 3 , MgO, TiO 2 and Pb 3 o 4 According to the chemical formula 0.50Bi(Mg 1 / 2 Ti 1 / 2 )O 3 -0.50PbTiO 3 After the stoichiometric ratio ingredients are mixed uniformly by a ball mill, they are compacted by cold isostatic pressing. The briquette and the selected seed crystal with the orientation of (110) were placed in a platinum crucible, and the crucible was sealed and then placed in a crucible drop furnace for crystal growth. First, it was kept at a temperature of 700 °C for 20 h, and then continued to heat up to Heat at 1300°C for 15 hours to melt the starting material, and adjust the position of the crucible to melt the top of the seed crystal. The temperature gradient of the growth interface is 20°C / cm, and the crucible is lowered at a rate of 0.1mm / h. Cool down to room temperature at a rate of / h to obtain a complete 0.50Bi(Mg 1 / 2 Ti 1 / 2 )O 3 -0.50PbTiO 3 single crystal;

[0043] The Curie temperature of the sample was ...

Embodiment 2

[0045] The high-purity raw material Bi 2 o 3 , MgO, TiO 2 and PbO according to the chemical formula 0.45Bi(Mg 1 / 2 Ti 1 / 2 )O 3 -0.55PbTiO 3 After the stoichiometric ratio ingredients are uniformly mixed by a ball mill, they are kept at a temperature of 750° C. for 15 hours, crushed and mixed uniformly, and then briquetted by a tablet machine. The briquette and the selected seed crystal with the orientation of (111) were placed in a platinum crucible, and the crucible was sealed and then placed in a crucible descending furnace for crystal growth. First, the temperature was kept at 800°C for 15h, and then the temperature continued to rise to Heat at 1350°C for 12 hours to melt the starting material, and adjust the position of the crucible to melt the top of the seed crystal. The temperature gradient of the growth interface is 30°C / cm, and the crucible is lowered at a rate of 0.3mm / h. Cool down to room temperature at a rate of / h to obtain a complete 0.45Bi(Mg 1 / 2 Ti 1 / 2 )...

Embodiment 3

[0048] The high-purity raw material Bi 2 o 3 , MgO, TiO 2 and PbO and Pb 3 o 4 The mixture according to the chemical formula 0.40Bi(Mg 1 / 2 Ti 1 / 2 )O 3 -0.60PbTiO 3 After the stoichiometric ratio ingredients are uniformly mixed by a ball mill, they are kept at a temperature of 850°C for 10 hours, smashed and mixed uniformly, and then briquetted by cold isostatic pressing. The briquette and the selected seed crystal with the orientation of (211) were placed in a platinum crucible. After the crucible was sealed, it was placed in a crucible descending furnace for crystal growth. It was first kept at a temperature of 1000 ° C for 12 h, and then continued to heat up to Heat at 1380°C for 8 hours to melt the starting material, and adjust the position of the crucible to melt the top of the seed crystal. The temperature gradient of the growth interface is 40°C / cm, and the crucible is lowered at a rate of 0.4mm / h. / h speed cooling to room temperature, the complete 0.40Bi(Mg 1 / 2...

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Abstract

The invention relates to a method for preparing a tetragonal phase bismuth magnesium titanate-lead titanate-based piezoelectric single crystal. The composition chemical formula of the tetragonal phase bismuth magnesium titanate-lead titanate-based piezoelectric single crystal is (1-x) Bi(Mg1 / 2Ti1 / 2)O3‑xPbTiO3, the preparation method includes: 1) weighing MgO, TiO2, Bi2O3 and lead oxides, and mixing them uniformly to obtain the starting material for crystal growth; The starting materials and seed crystals are placed in the crucible and put into the descending furnace. First, keep warm at 700-1250°C, then raise the temperature to 1300-1450°C and keep warm, and then lower the crucible at a speed of 0.1-1.2mm / hour. The temperature gradient is 20-100° C. / cm; 3) Cool the grown crystal to room temperature.

Description

technical field [0001] The invention relates to a piezoelectric single crystal and a growth method thereof, in particular to a method for growing a tetragonal bismuth magnesium titanate-lead titanate-based high-temperature piezoelectric single crystal by crucible descent. Background technique [0002] Piezoelectric materials can realize mutual conversion between mechanical energy and electrical energy. It has become one of the main research directions of high-tech in the 21st century. In the past ten years, with the rapid development of aerospace, petrochemical, geological exploration, nuclear power generation, automobile manufacturing and other industries, electronic equipment needs to work at higher temperatures, and at the same time, higher requirements are placed on piezoelectric materials. , not only requires piezoelectric materials to have excellent performance, but also requires piezoelectric materials to have a higher service temperature. For example, vibration sen...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/32C30B11/00H01L41/41H10N30/01H10N30/095
Inventor 刘锦峰许桂生杨丹凤陈夏夏
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI