Photomask blank, resist pattern forming process, and method for making photomask

A photomask and resist film technology, applied in the field of photomask blanks, can solve problems such as difficulty in meeting aging stability and resolution, and achieve the effect of improving aging stability

Active Publication Date: 2016-06-01
SHIN ETSU CHEM IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is then difficult to satisfy all factors including the aging stability and resolution of the resist film and effective coating of the antistatic film

Method used

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  • Photomask blank, resist pattern forming process, and method for making photomask
  • Photomask blank, resist pattern forming process, and method for making photomask
  • Photomask blank, resist pattern forming process, and method for making photomask

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0288] Synthesis examples, preparation examples, examples, reference examples and comparative examples are given below to further illustrate the present invention, although the present invention is not limited thereto. Mw is the weight average molecular weight determined by GPC using tetrahydrofuran solvent relative to polystyrene standards. pass 1 The compositional ratio of the polymer was analyzed by H-NMR.

[0289] The polymerizable monomer (monomer 1-6) used in the synthesis example has the following structural formula.

[0290]

[0291] Monomers 1, 2, 4 and 5 were synthesized according to the teachings of JP-A2007-204385, JP-A2007-204448, JP-A2012-032762 and JP-A2008-111103. Monomers 3 and 6 are commercially available from Tokyo Chemical Industry Co., Ltd.

Synthetic example 1

[0293] Synthesis of Polymer A1

[0294] In a nitrogen atmosphere, 87 g of monomer 1, 13 g of monomer 2 and 4.3 g of dimethyl 2,2'-azobisisobutyrate were dissolved in 155 g of methyl ethyl ketone and toluene in 7 / 3 in the mixture. This solution was added dropwise to 78 g of a 7 / 3 mixture of methyl ethyl ketone and toluene under stirring at 80° C. over 4 hours in a nitrogen atmosphere. At the end of the dropwise addition, the solution was aged at 80° C. for 2 hours. The polymerization solution was cooled to room temperature and added dropwise to 1,500 g of hexane. The solid precipitate was filtered, washed with 600 g of hexane, and vacuum dried at 60° C. for 20 hours to obtain a white solid powdery polymer. A polymer having the following formula is denoted as Polymer A1. Quantity 70g, yield 70%.

[0295]

Synthetic example 2、3

[0296] Synthesis Examples 2, 3 and Comparative Synthesis Examples 1, 2

[0297] Synthesis of polymers A2, A3 and comparative polymers A4, A5

[0298] Polymers A2, A3 and comparative polymers A4, A5 were synthesized by the same procedure as in Synthesis Example 1, except that the types and ratios of the monomers and the ratio of the solvent mixture were changed.

[0299]

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Abstract

A photomask blank has a chemically amplified positive resist film comprising (A) a polymer comprising recurring units having a specific substituent group on aromatic ring and recurring units having at least one fluorine atom, (B) a base resin which is decomposed under the action of acid to increase its solubility in alkaline developer, (C) an acid generator, and (D) a basic compound. The resist film is improved in age stability and antistatic film-receptivity.

Description

[0001] Cross References to Related Applications [0002] This nonprovisional application claims priority under 35 U.S.C. §119(a) to Patent Application No. 2014-237282 filed in Japan on November 25, 2014, the entire contents of which are hereby incorporated herein by reference. technical field [0003] The present invention relates to a photomask blank having a chemically amplified positive resist film, a method of forming a resist pattern, and a method of preparing a photomask from the photomask blank. Background technique [0004] The recent trend towards higher integration in integrated circuit technology has created a need for finer feature size patterns. In the processing of patterns having a size smaller than 0.2 μm, acid-catalyzed chemically amplified resist compositions are used in most cases. Light sources used for exposure in processing are high-energy radiation, including UV, deep UV, electron beam (EB), X-ray, excimer laser, gamma-ray, and synchrotron radiation. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/039G03F1/76
CPCG03F7/0046G03F7/0392G03F1/80G03F1/78G03F1/20
Inventor 阿达铁平渡边聪土门大将增永惠一
Owner SHIN ETSU CHEM IND CO LTD
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