A method for bonding compound semiconductors and silicon-based semiconductors

A semiconductor and compound technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of poor bonding effect, less than ideal, and high bonding temperature, and achieve thin dielectric, easy integration, and low bonding temperature. Effect

Active Publication Date: 2020-01-07
江苏矽智半导体科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The technical problem to be solved by the present invention is the problem of high bonding temperature and poor bonding effect of direct bonding. Improve, to realize the combination of the dangling bonds on the two surfaces, so as to improve the bonding effect, this method not only has high temperature, but also the bonding effect is not ideal

Method used

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  • A method for bonding compound semiconductors and silicon-based semiconductors
  • A method for bonding compound semiconductors and silicon-based semiconductors
  • A method for bonding compound semiconductors and silicon-based semiconductors

Examples

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Embodiment Construction

[0027] This embodiment provides a method for bonding a compound semiconductor indium phosphide and a silicon wafer, including the following steps:

[0028] (1) Prepare a 4-inch (100) crystal-oriented circular silicon wafer and perform standard RCA cleaning. The specific steps are as follows

[0029] A) Cleaning solution I, solution II and solution III used for RCA cleaning are configured; solution I is ammonia water (mass concentration 27%): hydrogen peroxide (mass concentration 30%): deionized water=1:1:5 volume ratio configuration; solution II It is configured as hydrofluoric acid (mass concentration 50%): deionized water = 1:50 volume ratio; solution III is hydrochloric acid (mass concentration 37%): hydrogen peroxide (mass concentration 30%): deionized water = 1:1:6 Volume ratio configuration.

[0030] B) Clean the silicon wafers in turn as follows: soak in solution I for 10 minutes at 80°C, put in deionized water for 1 minute, then soak the silicon wafers in solution II,...

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Abstract

The invention discloses a method for bonding a compound semiconductor and a silicon-based semiconductor. The method comprises following steps of (1) cleaning materials of the silicon-based semiconductor and then depositing silicon oxide on the surface of the silicon-based semiconductor; (2) cleaning the compound semiconductor and then depositing aluminum oxide medium thereon; (3) after depositing the aluminum oxide medium, carrying out trimethylaluminum gas blowing on the surface of the compound semiconductor; and (4) carrying out oxygen plasma blowing on the a silicon dioxide surface of materials of the silicon-based semiconductor and then bonding the two semiconductors. According to the low-temperature bonding method of the compound semiconductor and the silicon-based semiconductor, the temperature is lower than 350 degrees; and by bonding the aluminum oxide and the silicon oxide, a bonding step is simple and cost is low.

Description

technical field [0001] The invention relates to a method for bonding compound semiconductors and silicon-based semiconductors, and belongs to the technical field of semiconductor manufacturing. [0002] technical background [0003] Compound semiconductor materials are widely used in many technical fields due to their tailorable energy band structure, high electron mobility and other physical properties. However, silicon-based CMOS technology is the foundation of the modern microelectronics industry and will be applied to compounds in microwave, optoelectronic and other fields. The heterogeneous integration of semiconductor devices and circuits with silicon-based CMOS technology has always been a major technical problem of great concern to the industry and scientific research fields. [0004] In the existing direct bonding technology, the surface treatment temperature is high, the bonding layer is prone to produce voids and non-bonding areas, the bonding rate is low, and the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
CPCH01L21/02104
Inventor 刘丽蓉马莉夏校军
Owner 江苏矽智半导体科技有限公司
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