AlN template, preparation method of AlN template and semiconductor device on AlN template

Abstract

The invention discloses an AlN template, a preparation method of the AlN template and a semiconductor device on the AlN template, and belongs to the field of semiconductor technology. The AlN template comprises a substrate and an AlN thin film deposited on the substrate. The AlN thin film comprises a first AlN layer deposited on the substrate. The first AlN layer is mixed with oxygen. The content of the oxygen in the first AlN layer is gradually reduced from an interface of the first AlN layer and the substrate to the surface of the first AlN layer. The semiconductor device comprises the AlN template and a nitride semiconductor layer. The AlN template comprises the substrate and the AlN thin film deposited on the substrate. The nitride semiconductor layer is deposited on the AlN thin film. The AlN template is the aforesaid AlN template. The method comprises steps of providing the substrate; and depositing the AlN thin film on the substrate. The AlN thin film comprises a first AlN layer deposited on the substrate. The first AlN layer is mixed with oxygen. The content of the oxygen in the first AlN layer is gradually reduced from an interface of the first AlN layer and the substrate to the surface of the first AlN layer.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an AlN template, a preparation method of the AlN template and a semiconductor device on the AlN template. Background technique [0002] Currently, most GaN-based blue light emitting diodes (English: light emitting diode, abbreviation: LED) and GaN-based white light LEDs use sapphire substrates. Since sapphire and GaN materials have always had lattice mismatch and thermal mismatch problems, and there is only a small lattice mismatch between AlN materials, GaN materials, and sapphire substrates, AlN is placed on the sapphire substrate as a buffer layer and GaN. Specifically, an AlN buffer layer is first grown on a sapphire substrate to make an AlN template, and then GaN epitaxy is grown on the AlN template to make an LED epitaxial wafer. [0003] In the process of realizing the present invention, the inventor finds that there are at least the following problems in the prio...

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Problems solved by technology

[0005] In order to solve the problems that when GaN epitaxy is grown on the existing AlN template, the compressive stress in the GaN epitaxy is too large, the epitaxial wafer has a large warp, and the wavelength uniformity of the epitaxial wafer is poor, the embodiment of the present invention provides a A kind of AlN template, the preparation method of AlN template and the semiconductor device on AlN template

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