Internal matching power tube

Abstract

The invention discloses an internal matching power tube. The power tube comprises an input matching circuit, a die and an output matching circuit; the input matching circuit is a monolithic integrated circuit integrated on a GaAs substrate; the output matching circuit is an internal matching circuit prepared on a ceramic substrate. The power tube disclosed by the invention is combined with the advantages of the monolithic integrated circuit and the internal matching circuit; the prepared internal matching power tube is advantaged by wide bandwidth, stability, high efficiency, small size, high power added efficiency and high power; moreover, the application fields of the internal matching power tube are extended; the assembly difficulty is reduced; and the product uniformity is improved.

Description

Technical field: [0001] The invention relates to a microwave power device, in particular to an internal matching power tube which integrates the advantages of monolithic integration design technology and internal matching circuit design technology. Background technique: [0002] High-power solid-state microwave devices are the core devices of modern electronic equipment and communication systems. Their performance directly determines the core performance indicators of solid-state radar, electronic warfare and communication systems, and is of vital significance in the fields of national defense and communication. The development of electronic equipment and communication systems and other fields requires wider and wider communication frequency bands, smaller and smaller volumes, and higher reliability. As one of the important modules, the power amplifier realizes high frequency, broadband, miniaturization, high efficiency, and higher power is very important to the whole system...

AI Technical Summary

Problems solved by technology

[0004] The second-generation semiconductor material GaAs has good high-frequency characteristics, high electron mobility, large band gap, high injection efficiency, high reliability and mature technology, and is widely used in microwave and millimeter waves. The limitations in electrical and thermal performance are increasingly unable to meet the needs of future systems

Power MMIC has the advantages of small size, wide bandwidth, and high consistency, but the development cost is relatively high, and more importantly, it is due to the limitation of assembly on the chip area, the large output matching loss of the circuit, and the limited thinning of the chip thickness. output power is limited

Since the matching circuit of the internal matching power amplifier is made on a ceramic substrate or a gallium arsenide substrate, the power loss is greatly reduced compared with the power MMIC, which is conducive to improving the power added efficiency of the device and increasing the output power. However, the internal matching power amplifier It is difficult to widen the bandwidth, especially in the high-frequency X and Ku bands. Due to parasitic effects, the bandwidth can only be narrowed

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