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Electro-optical logic gate with SOI-based structure

An electro-optic logic gate and electrical technology, applied in the field of electro-optic logic gate, can solve the problems of bandwidth limitation, severe crosstalk, high power consumption, etc., and achieve the effect of reducing the area

Active Publication Date: 2016-06-01
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the existing communication network based on electronic technology, each node of the network needs to complete the optical-electrical-optical conversion, and the electronic devices in it are limited by the upper limit rate of 40Gb / s. , there are shortcomings such as bandwidth limitation, clock skew, serious crosstalk, high power consumption, etc., resulting in the phenomenon of "electronic bottleneck" in the communication network, and it is difficult to complete the transmission and switching processing of high-speed broadband integrated services
Since the real all-optical network cannot be realized at this stage, the photoelectric conversion efficiency has become the key to high-speed networks

Method used

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  • Electro-optical logic gate with SOI-based structure
  • Electro-optical logic gate with SOI-based structure
  • Electro-optical logic gate with SOI-based structure

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Embodiment Construction

[0021] The present invention will be further described below in conjunction with the accompanying drawings.

[0022] The present invention is a silicon-based electro-optical logic gate designed based on SOI materials. In order to achieve the best design effect, the size requirements for the single-mode ridge waveguide also vary according to the design purpose; the size design of the single-mode ridge waveguide in this case is as follows : Top Si thickness is 340nm, SiO 2 The thickness is 2um.

[0023] Such as figure 1 As shown, it is an electro-optic logic gate with SOI-based structure, including a single-mode ridge waveguide made based on SOI material. The single-mode ridge waveguide includes two parts: a straight waveguide 1 and a hook waveguide. The hook waveguide is located in the straight waveguide 1; the hook-type waveguide includes a curved waveguide 6, a first coupling region 3-1, a first half-ring waveguide 2-1, an auxiliary straight waveguide 5, an S-Bend4, and a f...

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Abstract

The invention discloses an electro-optical logic gate with an SOI-based structure. The electro-optical logic gate comprises a straight waveguide and a hooked waveguide made on the basis of SOI material, wherein the hooked waveguide comprises a first coupling area, a first semi-ring waveguide, an S-Bend, a second coupling area and a second semi-ring waveguide which are connected in sequence with end faces; the S-Bend is of central symmetric structure; the first coupling area and the second coupling area are in the same straight line; both the first semi-ring waveguide and the second semi-ring waveguide are semi-rings, and the ring openings of the first and second semi-ring waveguides directly face each other; and the hooked waveguide is positioned on one side of the direct waveguide, and the first coupling area and the second coupling area of the hooked waveguide is parallel to the direct waveguide. According to the electro-optical logic gate with the SOI-based structure, the high-speed modulation can be achieved while completing the coupling, the conversion from analog electrical signals to digital optical signals can be rapidly completed, the ultrafast operation of the electro-optical logic gate can be achieved, and applications in the high-speed communication networks can be obtained.

Description

technical field [0001] The invention relates to a silicon-based photonics and chip-level optical interconnection technology, in particular to a novel SOI-based electro-optic logic gate. Background technique [0002] With the increasing expansion of the Internet and the continuous advancement of information technology, the requirements for information processing speed are also increasing. Although the calculation speed of the all-optical information processing system is much higher than that of the electronic system, the current digital communication system has not penetrated into the field of optics. However, in the existing communication network based on electronic technology, each node of the network needs to complete the optical-electrical-optical conversion, and the electronic devices in it are limited by the upper limit rate of 40Gb / s. , there are disadvantages such as bandwidth limitation, clock skew, severe crosstalk, high power consumption, etc., resulting in the ph...

Claims

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Application Information

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IPC IPC(8): H03K19/14
CPCH03K19/14
Inventor 胡国华李磊戚志鹏恽斌峰张若虎钟嫄崔一平
Owner SOUTHEAST UNIV
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