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60 results about "Optical logic gates" patented technology

Full-optical logic gate

InactiveCN101526715AReduce the incident light powerReduce Sagnac loop lengthLogic circuits using opto-electronic devicesNon-linear opticsControl signalNOR gate
The invention relates to a full-optical logic gate (10), which can be reused to achieve opposite phase operations of an AND gate, an OR gate, an NOT gate, an NAND gate, an NOR gate, an XOR gate, an XNOR gate and combination thereof, and can also achieve a half adder. The full-optical logic gate comprises light input ports (2, 3) for receiving two control light signals respectively, a light input port (1) for receiving a synchronous light clock signal, a light output port (8) for outputting the result for expressing logic application, and a light output port (9) for outputting opposite phase operation. The full-optical logic gate is characterized by comprising a light combination device (4) and a nonlinear optical device (7), wherein the light combination device (4) is used for combining the two control light signals to generate corresponding combined signals with a wavelength division multiplexer or a polarization beam combiner; and the nonlinear optical device (7) is used for receiving the combined signals and the synchronous light clock signal and emitting two paths of light output signals mutual in opposite phase operations. The full-optical logic function depends on the characteristic of the nonlinear optical device, wherein the characteristic is selected so that the power of the output signals and the light power of the clock signal are redistributed and associated through the selected logic function.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

All optical processing circuit for conflict resolution and switch configuration in a 2x2 optical node

An optical processing circuit, such as a combinatorial network, comprises an arrangement of optical logic gates suitable for use in combination with a switched optical node of the kind having at least first and second input ports and two output ports, the node being configurable into either a cross or a bar configuration, and in which the optical processing circuit is arranged so as to receive at least three optical input signals which respectively comprise a packet identifier signal PIH which identifies whether or not a first input signal is present at the first input port of the switched optical node, the first input port being assigned a higher priority than the second input port, a first destination address AH indicating the output port of the switched optical node to which a first information carrying signal, received at the first input port, is intended to be passed, and a second destination address AL indicating the output port of the switched optical node to which a second information carrying signal, received at the second input port, is intended to be passed, and in which the processing circuit is configured to generate from these three optical input signals the following optical output signals: a contention resolution control (CRC) signal which has a first value if a routing conflict is present and a second if it is not; and a switch control generation (SCG) signal indicating whether the associated switched optical node is to be set in a cross or bar configuration.
Owner:TELEFON AB LM ERICSSON (PUBL)

N-InP-based monolithic integrated optical logic gate and manufacturing method thereof

The invention discloses an n-InP-based monolithic integrated optical logic gate. The gate comprises a substrate, an n type diluting waveguide layer, a lower limit layer, a multiple quantum well layer, an upper limit layer, a cover layer, a contact layer, an N type wide bandgap layer, a P type narrow bandgap absorption layer, a P type heavily doped InP electronic barrier layer, a P type heavily doped InGaAs contact layer, an n type metal electrode layer, a silicon nitride or silicon oxide isolating coating, a polymer cladding, a film resistor, a P type microstrip linear metal electrode and a P type electrode board, wherein the n type diluting waveguide layer is manufactured on the substrate; the lower limit layer, the multiple quantum well layer, the upper limit layer, the cover layer and the contact layer are sequentially manufactured on the n type diluting waveguide layer to form an electric absorption modulator structure; the N type wide bandgap layer, the P type narrow bandgap absorption layer, the P type heavily doped InP electronic barrier layer and the P type heavily doped InGaAs contact layer are sequentially manufactured on the n type diluting waveguide layer to form single-row current carrier detector structure; the n type metal electrode layer is manufactured on the n type diluting waveguide layer; the silicon nitride or silicon oxide isolating coating is manufactured on the n type metal electrode layer and covers the side surfaces and surroundings of the electric absorption modulator structure and the single-row current carrier detector structure; the polymer cladding is manufactured on the silicon nitride or silicon oxide isolating coating; the film resistor is manufactured on the polymer cladding; and the P type microstrip linear metal electrode and the P type electrode board are manufactured on the polymer cladding and are connected through the film resistor.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI

Integration type surface plasmon logic circuit

The invention relates to an integration type full-optical logic gate device and logic operation method thereof based on surface plasmon. The integration type full-optical logic gate device and logic operation method thereof based on surface Plasmon are characterized in that the full-optical logic gate device comprises an input module, an SPP convergence module and an output module. The input module is a three-input gate structure, and the three-input structure is composed of three groups of optical gratings which are of equal structures and are distributed equally and horizontally, that is, an input port A, a control port B and an input port C. When only dual-input ports are needed, the control port B can be left unused; the SPP convergence module comprises wave zone plates under a non-paraxial condition; the output module comprises an output end and an optical detector. The integration type surface plasmon logic circuit realizes a pure optic logic operation, compared with the prior art, the integration type surface plasmon logic circuit is high in integration level, small in volume, low in signal light consumption, far in transmission distance and has a potential of multi-level cascade; meanwhile, the integration type surface plasmon logic circuit covers lights of all wave length ranging from near ultraviolet to intermediate infrared, with 1.55 um communication wave length included.
Owner:BEIJING NORMAL UNIVERSITY

Silicon-based silicon dioxide waveguide, and manufacturing and application methods thereof

ActiveCN103364873AStrong contrastMature micromachining processOptical waveguide light guideLogic gateSilicon dioxide
The invention belongs to the technical field of optical material devices, and particularly relates to a silicon-based silicon dioxide waveguide, and manufacturing and application methods thereof. With the adoption of the silicon-based silicon dioxide waveguide, and the manufacturing and application methods thereof, a waveguide core area space of which the cross section is rectangular is formed through carrying out a photoetching process on silicon dioxide on a silicon base in the waveguide. Specific geometrical parameters are given to a silicon-based silicon dioxide waveguide structure, various all-optical logic devices can be realized, wherein the all-optical logic devices are as follows: an all-optical divider, an all-optical coupler, an all-optical switch, an all-optical logic gate, an all-optical storage and an all-optical router which can be obtained through processing the silicon-based silicon dioxide waveguide with a specific domain structure; furthermore, the application also comprises an all-optical integrated chip and an all-optical network; and a femtosecond pulse light source of which the wavelength range is 270-1100nm is used as a high-speed input signal of the all-optical logic device. The silicon dioxide domain structure adopted by the invention has the advantages of being compatible with a silicon microelectronic process in manufacturing, and being easily popularized and applied to industries.
Owner:TSINGHUA UNIV

Optical logic gate device on basis of coherent feedback and working method thereof

InactiveCN102955323ARealize optical logic\"Achieve\" gateLogic circuits using opto-electronic devicesNon-linear opticsLight spotNOR gate
The invention discloses an optical logic gate device on the basis of coherent feedback, which comprises a laser, polarization beam splitters, a medium unit, logic control gates, an optical fiber coupling frame and a multimode optical fiber. Pump light emitted by the laser enters a first polarization beam splitter and is reflected to the medium unit; after the pump light is subjected to four-wave mixing in the medium unit, an output light beam is generated and is emitted by a second polarization beam splitter to form a ring-shaped light spot and two bright spots in the vertical direction; two beams of feedback light are generated from the bright spots by a third polarization beam splitter; and the feedback light is controlled by a first logic control gate and a second logic control gate, enters the first polarization beam splitter by the optical fiber coupling frame and the multimode optical fiber and is crossed with the pump light in the medium unit. According to the invention, an optical logic OR gate and an optical logic NOR gate can be simultaneously implemented; and the optical logic gate device has the advantages of high ascending speed, consistent logic level, capability of controlling strong light by weak light and the like. The invention also discloses a working method of the optical logic gate device on the basis of coherent feedback.
Owner:EAST CHINA NORMAL UNIV
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