60 results about "Optical logic gates" patented technology

Systems and methods for modulating light with light in high index contrast waveguides clad with graphene. Graphene exhibits a large nonlinear electro-optic constant χ3. Waveguides fabricated on SOI wafers and clad with graphene are described. Systems and methods for modulating light with light are discussed. Optical logic gates are described. Waveguides having closed loop structures such as rings and ovals, Mach-Zehnder interferometer, grating, and Fabry-Perot configurations, are described. Optical signal processing methods, including optical modulation at Terahertz frequencies, are disclosed. Optical detectors are described. Microelectromechanical and nanoelectromechanical systems using graphene on silicon substrates are described.

Optical logic gates are constructed from Mach-Zehnder Interferometer (MZI) optical circuits. A multi-mode interference (MMI) splitter divides a continuous-wave input into two branches of the interferometer. Each branch has a semiconductor optical amplifier (SOA). When a logic input having a logic-high power level is applied to one of the SOA's, cross-phase modulation occurs in the SOA. The phase shift increases through the SOA. The branch coupled to the logic input has a relative phase shift of pi compared with the other branch. When two branches with the pi phase difference are combined, destructive interference occurs, producing a logic low. An MMI combiner or an equivalent phase shifter is used to combine the two branches. The MMI splitter adds a phase shift of pi / 2 to the upper branch but not to the lower branch, while the MMI combiner also adds pi / 2 shifts.

The invention relates to a full-optical logic gate (10), which can be reused to achieve opposite phase operations of an AND gate, an OR gate, an NOT gate, an NAND gate, an NOR gate, an XOR gate, an XNOR gate and combination thereof, and can also achieve a half adder. The full-optical logic gate comprises light input ports (2, 3) for receiving two control light signals respectively, a light input port (1) for receiving a synchronous light clock signal, a light output port (8) for outputting the result for expressing logic application, and a light output port (9) for outputting opposite phase operation. The full-optical logic gate is characterized by comprising a light combination device (4) and a nonlinear optical device (7), wherein the light combination device (4) is used for combining the two control light signals to generate corresponding combined signals with a wavelength division multiplexer or a polarization beam combiner; and the nonlinear optical device (7) is used for receiving the combined signals and the synchronous light clock signal and emitting two paths of light output signals mutual in opposite phase operations. The full-optical logic function depends on the characteristic of the nonlinear optical device, wherein the characteristic is selected so that the power of the output signals and the light power of the clock signal are redistributed and associated through the selected logic function.

The invention relates to an optical logic gate, which comprises first optical input elements (I1 and I4), second optical input elements (I2 and I5), an optical logic arithmetic device and optical output elements (O1 and O2). The first optical input elements (I1 and I4) and the second optical input elements (I2 and I5) are used for receiving coherent light; and the optical logic arithmetic device performs logical operation on the input coherent light according to a logic function needed to be realized, and outputs an operation result via the optical output elements (O1 and O2). By the invention, pure optical logic operation is realized; since all the elements are optical elements, the introduction of electrical elements is avoided; and the signal switching rate of the optical logic gate ishigh.

An optical logic gate (10) comprises the following components: a first and a second light input ends (11 and 12) which are used for receiving the respective light signals (A and B), and a output end (15) which is used for outputting the optical signal (Pout) that represents the result applied with the necessary logical function. The logic gate is characterized by the light combining device (13) which is used for combining the light signals for generating the corresponding combined signal, the power (Pi) of the combined signal is the combination of the optical signal powers (PA and PB), and the non-linear optical device (14) which is used for receiving the combined signal (Pi) and emitting the optical output signal (Pout). The logical function depends on the characteristic of the non-linear optical device, and the characteristic is selected that the power of the output signal is relevant to the power of the combined signal through the selected logic function.

An all-optical linear feedback circuit for use, for example, as a maximal length pseudo random bit sequence generator includes an all-optical logic circuit that is capable of generating 2N−1 bit maximal length pseudo random bit sequences on an optical channel at high data rates e.g. 80 Gbit / s. In the pseudo random bit sequence generator of the present invention, intensity-dependent phase modulation of at least one included semiconductor optical amplifier (SOA) is implemented. The maximum data rate is limited by the fast gain recovery time of the carriers in the SOA. An optical logic gate of the pseudo random bit sequence generator of the present invention may be constructed using various nonlinear elements that provide ultra-fast intensity-dependent phase modulation.

An optical processing circuit, such as a combinatorial network, comprises an arrangement of optical logic gates suitable for use in combination with a switched optical node of the kind having at least first and second input ports and two output ports, the node being configurable into either a cross or a bar configuration, and in which the optical processing circuit is arranged so as to receive at least three optical input signals which respectively comprise a packet identifier signal PIH which identifies whether or not a first input signal is present at the first input port of the switched optical node, the first input port being assigned a higher priority than the second input port, a first destination address AH indicating the output port of the switched optical node to which a first information carrying signal, received at the first input port, is intended to be passed, and a second destination address AL indicating the output port of the switched optical node to which a second information carrying signal, received at the second input port, is intended to be passed, and in which the processing circuit is configured to generate from these three optical input signals the following optical output signals: a contention resolution control (CRC) signal which has a first value if a routing conflict is present and a second if it is not; and a switch control generation (SCG) signal indicating whether the associated switched optical node is to be set in a cross or bar configuration.

The invention discloses an n-InP-based monolithic integrated optical logic gate. The gate comprises a substrate, an n type diluting waveguide layer, a lower limit layer, a multiple quantum well layer, an upper limit layer, a cover layer, a contact layer, an N type wide bandgap layer, a P type narrow bandgap absorption layer, a P type heavily doped InP electronic barrier layer, a P type heavily doped InGaAs contact layer, an n type metal electrode layer, a silicon nitride or silicon oxide isolating coating, a polymer cladding, a film resistor, a P type microstrip linear metal electrode and a P type electrode board, wherein the n type diluting waveguide layer is manufactured on the substrate; the lower limit layer, the multiple quantum well layer, the upper limit layer, the cover layer and the contact layer are sequentially manufactured on the n type diluting waveguide layer to form an electric absorption modulator structure; the N type wide bandgap layer, the P type narrow bandgap absorption layer, the P type heavily doped InP electronic barrier layer and the P type heavily doped InGaAs contact layer are sequentially manufactured on the n type diluting waveguide layer to form single-row current carrier detector structure; the n type metal electrode layer is manufactured on the n type diluting waveguide layer; the silicon nitride or silicon oxide isolating coating is manufactured on the n type metal electrode layer and covers the side surfaces and surroundings of the electric absorption modulator structure and the single-row current carrier detector structure; the polymer cladding is manufactured on the silicon nitride or silicon oxide isolating coating; the film resistor is manufactured on the polymer cladding; and the P type microstrip linear metal electrode and the P type electrode board are manufactured on the polymer cladding and are connected through the film resistor.

A system, method, and apparatus for delayed optical logic gates based on slow light and enhanced nondegenerate four-wave mixing processes, where a single or multiple delayed optical routers are utilized for dark resonance interactions in which two-color lasers interact with a three-level nonlinear optical medium comprised of two ground states and one excited state through the nondegenerate four-wave mixing processes. The delayed optical logic mechanism is based on combination of single or multiple dark resonance-induced two-photon coherence conversion via slow light phenomenon. The two-photon coherence induced on the ground states is optically detected via nondegenerate four-wave mixing processes. The nondegenerate four-wave mixing generation is enhanced owing to dark resonance or electromagnetically induced transparency. The gating time and bandwidth of the present delayed optical logic gates is invariant to the delayed time of the delayed optical router because IN and OUT bandwidth across the nonlinear medium must be same. The present invention of delayed optical logic gates have potential to keep up ultra-high-bandwidth optical information processing using relatively slow electronic processing devices.

An all-optical linear feedback circuit for use, for example, as a maximal length pseudo random bit sequence generator includes an all-optical logic circuit that is capable of generating 2N−1 bit maximal length pseudo random bit sequences on an optical channel at high data rates e.g. 80 Gbit / s. In the pseudo random bit sequence generator of the present invention, intensity-dependent phase modulation of at least one included semiconductor optical amplifier (SOA) is implemented. The maximum data rate is limited by the fast gain recovery time of the carriers in the SOA. An optical logic gate of the pseudo random bit sequence generator of the present invention may be constructed using various nonlinear elements that provide ultra-fast intensity-dependent phase modulation.

An all optical logical gate of light waveguide consists several input waveguide enabling to input signal and control light pulse, several output waveguide and multimode interference area. It is featured as connecting output waveguide to input waveguide by multimode interference area with its inlet end being connected with input waveguide and its outlet to output waveguide so output waveguide can output different logical gates of OK, NOR, NOT and NAND by placing different combinations of input waveguide in multimode interference area to form different interference states.

An optical data latch is formed on a substrate from a pair of optical logic gates in a cross-coupled arrangement in which optical waveguides are used to couple an output of each gate to an photodetector input of the other gate. This provides an optical bi-stability which can be used to store a bit of optical information in the latch. Each optical logic gate, which can be an optical NOT gate (i.e. an optical inverter) or an optical NOR gate, includes a waveguide photodetector electrically connected in series with a waveguide electroabsorption modulator. The optical data latch can be formed on a III-V compound semiconductor substrate (e.g. an InP or GaAs substrate) from III-V compound semiconductor layers. A number of optical data latches can be cascaded to form a clocked optical data shift register.

The present invention belongs to the analytical chemistry optic logic gate technology field, and relates to a label-free, universal and fast-response fluorescent logic device synthetic method and the application thereof in digit odd-even discrimination. The method comprises: employing graphene oxide and silver nanoclusters protected by single stranded DNA as a detection platform, and adding DNAs with different sequences as signal input so as to obtain output of different fluorescence signals. The method combines nanometer materials to complete odd-even discrimination of decimal digits from 0 to 31 on the molecular level. Compared to the prior art, the serial logic device employs the high fluorescence quantum efficiency feature and the label-free label of noble-metal nanoclusters to combine with novel nanometer materials such as the graphene oxide and the like so as to rapidly realize the operation function of the odd-even discriminator and have latent application values at the aspects of disease diagnosis, molecular biology detection and cell imaging.

The invention is about the La-Mg-Ni alloy and the multiple alloy film which can change the color by the H2. The alloy firm has the low hydriding condition, the quick hidriding speed and the big photo-electricity character, good stability and long life. The alloy material forms the alloy film through the codeposition or deposition separately by the sputter method, then to form the nanometer alloy film after the annealing. The alloy film can be used for the H2 detector, temperature bulb, the building materials, the car back mirror, optical logic door, the satellite and the communication apparatus.

The invention discloses a track type micro-ring 2*4 thermo-optic switch prepared based on SOI material. The switch comprises a straight waveguide, a track type micro-ring waveguide prepared based on SOI material, and a thermal electrode arranged at the top layer. For the track type micro-ring waveguide, a bending waveguide and a short straight waveguide forms a closed track; coupling zones are formed between the track type micro-ring waveguide and direct waveguides; and the intersection parts of the direct waveguides employ multimode waveguide intersected structures. A digital electrical signal loaded by the thermal electrode arranged at the top layer is applied to realize rapid switching of optical channels. Therefore, simultaneous switching of the multi-input and multi-output optical signals can be realized; and the track type micro-ring 2*4 thermo-optic switch can be applied to working state detection of unit devices in the optical switch array, the optical routing, the optical logic gate design, and the integrated optical path.

Optical signal processor (1) comprising an optical waveguide loop (3), and first and second phase modulator loops (6, 7), each of the first and second phase modulator loops is in optical communication with the optical waveguide loop, and the first and second phase modulator loops each comprises a respective control signal input port (8, 9) to control phase modulation applied by the phase modulation loops, and the optical waveguide loop comprising two input ports (20a, 20b) to direct input signals (10, 11) in opposite senses in the optical waveguide loop and further comprising an output port (20c) to output resulting signals. The first and second phase modulator loops may comprise nonlinear optical loop mirrors. The processor may be an optical logic gate device.

The invention discloses an all-optical logic gate device based on resonant ring-MIM waveguide coherent regulation and control. The all-optical logic gate device comprises a silicon dioxide substrate plated with an Ag film, a resonant ring-MIM waveguide combined structure arranged on the substrate and formed by air slits, and at least two ports arranged on an MIM waveguide. Symmetric incident conditions are introduced into a single-side or double-side port, and a reasonable output end is arranged; all-optical coherence regulation and control can be realized on the resonant ring-MIM waveguide byadjusting the phase difference of incident light so as to design different logic gate functions including an AND gate, an OR gate, a NOT gate and an XOR gate, and simple switching between different logic gates under the same structure can be completed. The device has potential application prospects in the fields of optical signal processing technologies, ultra-compact photonic integrated devices,sensing technologies and the like.

The invention provides an optical device, an electronic device and a programmable photon integrated circuit. The optical device comprises: a first coupler with an adjustable beam splitting ratio; a sensing arm and a programmable modulation arm which are connected with the first coupler, wherein the sensing arm is used for generating a first signal from a first light wave beam output by the first coupler through the slot waveguide, the programmable modulation arm is used for obtaining a second signal according to a second light wave beam output by the first coupler by utilizing the diffraction effect of a grating, and the grating is a nano grating generated under a pre-programmed voltage parameter of a programmable piezoelectric transducer of the programmable modulation arm; an input port which is connected with the sensing arm and the programmable modulation arm; and an output port which is connected with the photoelectric detector. The optical logic gate operation can be carried out according to the optical signal, the biosensor detection can also be carried out, the optical logic gate detection device can adapt to various scenes, and the repeated use and sustainable use of the device are promoted.

The invention discloses an optical logic gate based on double parallel microring resonators. The optical logic gate is realized by two parallel microring resonators (MRR) and waveguides of two parallel namometer wires, two inputs are electric pulse sequences to be calculated, and calculated results to be output are optical pulse sequences. By the optical logic gate, the problems of speed bottleneck, power consumption and gate delay and competition and risks brought by the gate delay in a traditional electric logic gate are solved, the optical information processing and the speed of information processing in optical calculation are improved, and the small volume, low power consumption and low cost of devices can be guaranteed.

The invention discloses an SOI-based broadband adjustable beam splitting ratio polarization rotary beam splitter, which comprises a waveguide layer, a thermode, a buffer layer, an input end and an output end, wherein the waveguide layer comprises three sections of tapering ridge waveguides, an S-shaped bent ridge waveguide, a straight waveguide, an Archimedes spiral bent ridge waveguide, a straight ridge waveguide and an output ridge waveguide, the waveguide layer is prepared from an SOI material, the thermode and the buffer layer are sequentially arranged above the waveguide layer, the thermode is prepared from a TiN material, and the temperature of the thermode can be changed by applying a voltage across the thermode. According to the invention, polarization rotation, beam splitting andbeam splitting ratio adjustment of an input optical signal can be realized, and the beam splitter can be applied to a polarization multiplexing system, a coherent light communication system, optical logic gate design and the like, and has the advantages of low insertion loss, simple process, strong reconfigurability, wide working bandwidth and the like.

The invention relates to an integration type full-optical logic gate device and logic operation method thereof based on surface plasmon. The integration type full-optical logic gate device and logic operation method thereof based on surface Plasmon are characterized in that the full-optical logic gate device comprises an input module, an SPP convergence module and an output module. The input module is a three-input gate structure, and the three-input structure is composed of three groups of optical gratings which are of equal structures and are distributed equally and horizontally, that is, an input port A, a control port B and an input port C. When only dual-input ports are needed, the control port B can be left unused; the SPP convergence module comprises wave zone plates under a non-paraxial condition; the output module comprises an output end and an optical detector. The integration type surface plasmon logic circuit realizes a pure optic logic operation, compared with the prior art, the integration type surface plasmon logic circuit is high in integration level, small in volume, low in signal light consumption, far in transmission distance and has a potential of multi-level cascade; meanwhile, the integration type surface plasmon logic circuit covers lights of all wave length ranging from near ultraviolet to intermediate infrared, with 1.55 um communication wave length included.

An optical logic gate includes: a DNA based nanostructure including DNA and metal nanoparticles coupled to the DNA, the DNA based nanostructure being configured to rotate a polarization plane of an incident light; a polarizer to which light passing through the DNA based nanostructure is incident, the polarizer being configured to extract a component in a direction of a predetermined reference axis from light whose polarization plane is rotated by the DNA based nanostructure; and a detection unit to which light passing through the polarizer is incident, the detection unit being configured to generate a logic signal based on a result obtained by comparing the intensity of the component in the reference axis direction extracted by the polarizer with a predetermined threshold value.

The invention belongs to the technical field of optical material devices, and particularly relates to a silicon-based silicon dioxide waveguide, and manufacturing and application methods thereof. With the adoption of the silicon-based silicon dioxide waveguide, and the manufacturing and application methods thereof, a waveguide core area space of which the cross section is rectangular is formed through carrying out a photoetching process on silicon dioxide on a silicon base in the waveguide. Specific geometrical parameters are given to a silicon-based silicon dioxide waveguide structure, various all-optical logic devices can be realized, wherein the all-optical logic devices are as follows: an all-optical divider, an all-optical coupler, an all-optical switch, an all-optical logic gate, an all-optical storage and an all-optical router which can be obtained through processing the silicon-based silicon dioxide waveguide with a specific domain structure; furthermore, the application also comprises an all-optical integrated chip and an all-optical network; and a femtosecond pulse light source of which the wavelength range is 270-1100nm is used as a high-speed input signal of the all-optical logic device. The silicon dioxide domain structure adopted by the invention has the advantages of being compatible with a silicon microelectronic process in manufacturing, and being easily popularized and applied to industries.

Optical logic gate having a second-harmonic generator element that receives a first and a second optical input signal respectively having a first and a second angular frequency and respectively having a first and a second polarization, and which provides a second-harmonic optical signal having a third angular frequency and a third polarization. The third angular frequency is equal to the sum of the first and the second angular frequency. The third polarization is a function of the first and the second polarization. The second-harmonic generator element includes a second-harmonic generator layer in a material having a non-null second-order optical tensor.

The present invention provides an EIT-based photonic logic gate, which is constituted by EIT-based stack layers of periodic array of photonic crystal (PCs) layers and EIT (Electromagnetic Induced Transparent) material layers. The input probe signals are incident on the first photonic crystal layer, passing through one or more than one PCs-EIT interfaces and transmitted out from the last EIT material layer. Control filed as the enable signals are incident on each EIT layer to activate the optical logic gate. By varying the detune frequency of probe field and Rabi frequency of control field, its band gap structure can be adjusted. Henceforth, the tunable optical EIT-based photonic logic gate can be achieved as user required.

The invention discloses an optical logic gate device on the basis of coherent feedback, which comprises a laser, polarization beam splitters, a medium unit, logic control gates, an optical fiber coupling frame and a multimode optical fiber. Pump light emitted by the laser enters a first polarization beam splitter and is reflected to the medium unit; after the pump light is subjected to four-wave mixing in the medium unit, an output light beam is generated and is emitted by a second polarization beam splitter to form a ring-shaped light spot and two bright spots in the vertical direction; two beams of feedback light are generated from the bright spots by a third polarization beam splitter; and the feedback light is controlled by a first logic control gate and a second logic control gate, enters the first polarization beam splitter by the optical fiber coupling frame and the multimode optical fiber and is crossed with the pump light in the medium unit. According to the invention, an optical logic OR gate and an optical logic NOR gate can be simultaneously implemented; and the optical logic gate device has the advantages of high ascending speed, consistent logic level, capability of controlling strong light by weak light and the like. The invention also discloses a working method of the optical logic gate device on the basis of coherent feedback.

An exclusive-or optical logic gate based on an Ag / non-linear material comprises a waveguide substrate, wherein an optical wave incidence channel and an optical wave emergence channel are formed in the waveguide substrate in the direction parallel to a horizontal center axis, a field intensity monitor is arranged on the left side of the optical wave emergence channel in the waveguide substrate, and a left ring cavity and a right ring cavity are formed between the optical wave incidence channel and the optical wave emergence channel in the waveguide substrate. The exclusive-or optical logic gate based on the Ag / non-linear material is simple in structure, small in size and convenient to integrate, the refractive index of the non-linear material is changed through control of light intensity of externally intensified light, then logical conversion is realized, and the exclusive-or optical logic gate based on the Ag / non-linear material can be popularized and applied to the technical field of optical communication devices or equipment.

The invention provides a vortex light coding all-optical logic gate based on binary phase shift keying, and an implementation method thereof. The vortex light coding all-optical logic gate structure based on binary phase shift keying comprises a substrate 1, a nanometer metal film 2, an annular nanometer groove 2-1 and an output port 3. The output port 3 is positioned in the center of the annularnanometer groove 2-1. According to the specific implementation method, two beams of orthogonal vortex light are input from the lower surface of a substrate 1 to serve as input signals, and 1 and 0 ofan input logic state are defined by regulating and controlling the phase shift of the input signals. Vortex light excites surface plasmas (SPPS) in the annular nanometer groove 2-1, and the SPPs are transmitted along the surface of the nanometer metal film 2 and converged at the output port 3. Different SPPs intensity values at the output port 3 are respectively defined as different output logic states. Seven basic logic gate functions can be realized on a single structure by adjusting the relative phase difference of the input signals.