Reaction chamber and semiconductor processing equipment

Abstract

The invention discloses a reaction chamber and semiconductor processing equipment. According to the reaction chamber, a back blowing air feeding system comprises an upper back blowing air path and a lower back blowing air path respectively supplying back blowing air for an upper back blowing chamber and a lower back blowing chamber, wherein the upper back blowing air path and the lower back blowing air path respectively have an upper back blowing pumping bypass and a lower back blowing pumping bypass, the upper back blowing pumping bypass is connected with the reaction chamber and is used for transmitting redundant back flowing air of the upper back blowing air path to the reaction chamber, and the lower back blowing pumping bypass is connected with a chamber pumping system and is used for transmitting redundant back flowing air of the lower back blowing air path to the chamber pumping system. The reaction chamber can not only avoid influence of the lower back flowing path on the process, but also can prolong the cold pump regeneration period, and thereby capacity can be improved.

Description

technical field [0001] The invention relates to the technical field of microelectronics, and more specifically, to a reaction chamber and semiconductor processing equipment. Background technique [0002] In the integrated circuit (IC) manufacturing process, especially in the plasma etching (ETCH), physical vapor deposition (PVD), chemical vapor deposition (CVD) and other processes, in order to fix, support and transfer wafers and other processed devices, To avoid movement or dislocation of the processed device, a wafer clamping device such as an Electro Static Chuck (ESC for short) or a mechanical clamp is often used. [0003] At present, a high temperature electrostatic chuck is usually introduced into the manufacturing process of a hard mask (Hardmask) to fix the wafer while controlling the temperature of the wafer. see figure 1 , which shows a common wafer holding device in the prior art. The wafer clamping device includes an electrostatic chuck 1 and a heating base 2 ...

AI Technical Summary

Problems solved by technology

[0006] One, because the lower back-blowing air path 202 needs to supply the back-blowing gas to the back-blowing cavity 15 all the time, and the excess back-blowing gas in the lower back-blowing air path 202 flows into the reaction chamber 100 from the bypass air path, and then It is extracted from the air extraction path, which will affect the pressure rise rate and process pressure of the reaction chamber 100 during the process, thereby affecting the process result;

[0007] Second, due to the limitation of the pumping capacity of the cold pump, it needs to stop the process operation for regeneration when the pumping capacity reaches the set value, and the lower back-blowing air circuit 202 has been supplying the back-blowing cavity 15 to the bottom. Gas reduces the time it takes for the cold pump to reach pumping capacity, causing more cold pump regenerations and impacting capacity

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