Wafer processing method

Abstract

A wafer processing method is provided. When a wafer is divided into various devices, implementation can be performed in a condition that side faces and front faces of the devices are not polluted. The wafer processing method comprises the following steps: a modified layer forming step that a converged spot is positioned in the wafer, a laser light ray having a permeable wavelength irradiates along a segment predetermined line, and then a modifier layer is formed in the wafer along the segment predetermined line; and a back face grinding step that grinding water is supplied on one and a back face is grinded at the same time so that a specified thickness is formed, and the wafer is divided into various device chips along the segment predetermined line taking the modified layer as a fracture starting point. The wafer processing method further comprises a protection film forming step that, before the back face grinding step is implemented, a liquid resin hardening caused by irradiation of ultraviolet light wraps the front face of the wafer, and then a protection film is formed; a protection film hardening step that the protection film is irradiated by the ultraviolet light to harden the protection film; and a protection tap bonding step that a protection tap is bonded to a surface of the protection film.

Description

technical field

[0001] The present invention relates to a method of processing a wafer in which a plurality of planned dividing lines are formed in a grid pattern on the front surface, and devices are formed in a plurality of regions divided by the plurality of planned dividing lines, along which Divide the wafer. Background technique

[0002] In the manufacturing process of semiconductor devices, a plurality of regions are divided by dividing lines arranged in a grid pattern on the front surface of a substantially disk-shaped semiconductor wafer, and devices such as ICs and LSIs are formed in the divided regions. The semiconductor wafer formed in this manner is cut along planned dividing lines to divide the regions where the devices are formed to manufacture individual device chips.

[0003] The above-mentioned cutting along the planned dividing line of the semiconductor wafer is usually performed by a cutting device called a dicing saw. The cutting device has: a chuck ta...

Examples

Embodiment Construction

[0032] Hereinafter, preferred embodiments of the wafer processing method of the present invention will be described in detail with reference to the drawings.

[0033] figure 1 A perspective view of a semiconductor wafer processed according to the invention is shown in . figure 1 The illustrated semiconductor wafer 2 is composed of a silicon wafer with a thickness of, for example, 500 μm. On the front surface 2 a, a plurality of planned dividing lines 21 are formed in a grid pattern, and are formed in a plurality of regions divided by the plurality of planned dividing lines 21 . There are devices 22 such as ICs and LSIs. Hereinafter, a wafer processing method for dividing the semiconductor wafer 2 into individual devices 22 along the planned dividing lines 21 will be described.

[0034] First, a protective film forming step is performed to form a protective film by coating the front surface 2 a of the semiconductor wafer 2 with a liquid resin that is hardened by irradiation o...

technical field

[0001] The present invention relates to a method of processing a wafer in which a plurality of planned dividing lines are formed in a grid pattern on the front surface, and devices are formed in a plurality of regions divided by the plurality of planned dividing lines, along which Divide the wafer. Background technique

[0002] In the manufacturing process of semiconductor devices, a plurality of regions are divided by dividing lines arranged in a grid pattern on the front surface of a substantially disk-shaped semiconductor wafer, and devices such as ICs and LSIs are formed in the divided regions. The semiconductor wafer formed in this manner is cut along planned dividing lines to divide the regions where the devices are formed to manufacture individual device chips.

[0003] The above-mentioned cutting along the planned dividing line of the semiconductor wafer is usually performed by a cutting device called a dicing saw. The cutting device has: a chuck ta...

Examples

Embodiment Construction

[0032] Hereinafter, preferred embodiments of the wafer processing method of the present invention will be described in detail with reference to the drawings.

[0033] figure 1 A perspective view of a semiconductor wafer processed according to the invention is shown in . figure 1 The illustrated semiconductor wafer 2 is composed of a silicon wafer with a thickness of, for example, 500 μm. On the front surface 2 a, a plurality of planned dividing lines 21 are formed in a grid pattern, and are formed in a plurality of regions divided by the plurality of planned dividing lines 21 . There are devices 22 such as ICs and LSIs. Hereinafter, a wafer processing method for dividing the semiconductor wafer 2 into individual devices 22 along the planned dividing lines 21 will be described.

[0034] First, a protective film forming step is performed to form a protective film by coating the front surface 2 a of the semiconductor wafer 2 with a liquid resin that is hardened by irradiation o...

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