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A method of fabricating LED vertical chips using wafer-level Si pattern substrates

A graphics substrate, wafer-level technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of chip processing changes, Si light absorption, etc., achieve good compatibility, simplify processes, and solve Si light absorption effect of the problem

Active Publication Date: 2018-07-24
HEYUAN CHOICORE PHOTOELECTRIC TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the existence of grooves on the Si patterned substrate, the subsequent chip processing process has been greatly changed. Currently, there are few reports on the chip production based on the Si patterned substrate LED epitaxial film.
At the same time, the problem of Si light absorption still exists

Method used

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  • A method of fabricating LED vertical chips using wafer-level Si pattern substrates
  • A method of fabricating LED vertical chips using wafer-level Si pattern substrates
  • A method of fabricating LED vertical chips using wafer-level Si pattern substrates

Examples

Experimental program
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Effect test

Embodiment 1

[0041] Such asfigure 1 As shown, a method of using a wafer-level Si pattern substrate to make an LED vertical chip in this embodiment includes the following steps:

[0042] 1) The making of Si pattern substrate: Adopt conventional gluing, exposure, etching process to realize the transfer of pattern on Si substrate, obtain Si pattern substrate; The pattern on described Si pattern substrate includes several matrixes Arranged square bumps, grooves are arranged between every two adjacent square bumps; the side length L=1mm of the square bumps, the width d=15 μm of the grooves, and the depth h=5 μm of the grooves ; The layout of the graphics is as follows image 3 shown.

[0043] 2) Growth of LED epitaxial layer: Si pattern substrate was cleaned by HF ultrasonic for 3min, N 2 After drying, the LED epitaxial layer is grown on the Si pattern substrate by thin film deposition method; the LED epitaxial layer includes AlN buffer layer, AlGaN step buffer layer, n-GaN layer, light emitt...

Embodiment 2

[0054] Except for the following features, this embodiment has the same or similar characteristics as Embodiment 1.

[0055] In step 1), the side length of the square bump on the Si substrate is L=0.5 mm, the groove width d=10 μm, and the groove depth h=10 μm.

Embodiment 3

[0057] Except for the following features, this embodiment has the same or similar characteristics as Embodiment 1.

[0058] The growth of the LED epitaxial layer in step 2) adopts the combination of metal-organic chemical vapor deposition and molecular beam epitaxy, and grows the LED epitaxial layer on the Si pattern substrate. The epitaxial layer includes an AlN buffer layer, an AlGaN step buffer layer, and an n-GaN layer. , a light emitting layer and a p-GaN layer.

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Abstract

The invention discloses a method for manufacturing an LED vertical chip through adoption of a wafer-level Si patterned substrate. The method comprises the following steps of 1, making of a Si patterned substrate; 2, growing of an LED epitaxial layer; 3, making of a Sio[2] barrier layer; 4, making of an anticorrosive layer; 5, filling of photoresist in groove portions; 6, electroplating of a Cu supporting layer; 7, corrosion of the Si patterned substrate; 8, making of N electrodes; and 9 segmenting of the vertical chip. According to the invention, the Si substrate is peeled off to radically solve problems of Si light adsorption; meanwhile, the Sio[2] barrier layers are introduced into the groove portions, so that detection of photoelectric properties of the vertical chip at the dimension of a wafer can be realized without cutting of the chip; and the method is suitable for making of vertical chips of Si patterned substrates of any wafer-level, and has advantages of a simplified detection procedure and good compatibility.

Description

technical field [0001] The invention relates to the manufacture of LED vertical chips, in particular to a method for manufacturing LED vertical chips by using a wafer-level Si pattern substrate. Background technique [0002] LED is a product under the social background of advocating energy saving and emission reduction. It has good environmental protection, energy saving and anti-seismic performance, and has broad prospects in the future lighting market. It is known as the fourth-generation green lighting source. As one of the representatives of the third-generation semiconductor materials, GaN has excellent properties such as direct band gap, wide band gap, high saturation electron drift velocity, high breakdown electric field, and high thermal conductivity, and has attracted extensive attention in microelectronic applications. Since I. Akasaki successfully obtained p-GaN for the first time and achieved a new breakthrough in blue LEDs, GaN-based compounds have been the main...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/20H01L33/00H01L21/78
CPCH01L21/78H01L33/0066H01L33/0075H01L33/0093H01L33/20
Inventor 李国强
Owner HEYUAN CHOICORE PHOTOELECTRIC TECH CO LTD
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