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Method for removing graphene

A kind of graphene, a specific technology, applied in the field of chemical material production, can solve the problems of difficult application processing requirements, small processing area, small processing area, etc., and achieve the effect of low-cost mask, simple process, and wide mask range

Inactive Publication Date: 2016-06-29
WUXI GRAPHENE FILM +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Plasma etching is divided into plasma etching under vacuum and low pressure environment, and plasma etching under normal pressure. Vacuum or low pressure environment has higher requirements on equipment, and the parts to be processed need to be placed in the equipment chamber before processing, and the relative cost High, cumbersome process
Atmospheric pressure plasma can only achieve a small processing area at present, generally a point-shaped processing area, and the efficiency is relatively low, so it is difficult to apply to large-area processing requirements
The laser sweeping process also has the problem of small processing area and point-like processing range, which has the problem of low efficiency

Method used

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  • Method for removing graphene

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Coating photoresist on the surface of a layer of graphene film, and making it into a photoresist mask through exposure and development. Then use ultraviolet light with a wavelength of 150nm, place the ultraviolet light tube in the atmospheric environment, and pass nitrogen gas around the lamp tube, so that the content of nitrogen in the environment reaches 90%-97%, and then treat the graphene film with ultraviolet light for 30 Seconds, the photoresist layer is removed after the treatment is completed, and a graphene film pattern is made.

[0030] Graphene patterns observed by optical microscopy and scanning electron microscopy.

Embodiment 2

[0032] A layer of 15-20nm thick chromium layer is deposited on the surface of a layer of graphene by evaporation, and then a layer of photoresist is coated on the surface of the chromium layer, exposed and developed to make the photoresist form a hollow pattern, and then wet through Etching patterns the chromium layer and removes the photoresist, creating a very thin chromium mask layer. Place the ultraviolet light tube in the atmospheric environment, and pass argon gas around the lamp tube, so that the total content of nitrogen / argon in the environment reaches 85%-95%. Subsequently, the graphene film was treated with 185nm ultraviolet light for 1 minute, and the remaining chromium layer was removed by wet etching to form a graphene film pattern.

[0033] Graphene patterns observed by optical microscopy and scanning electron microscopy.

Embodiment 3

[0035] One to three layers of graphene films placed on silicon and silicon dioxide wafers are filled with 3% chlorine gas in a nitrogen environment, and the graphene surface is irradiated with 170nm ultraviolet light for one minute to remove the graphene on the surface.

[0036] The complete removal of graphene was detected by optical microscopy and scanning electron microscopy.

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Abstract

The invention discloses a method for removing graphene. According to the method, a graphene thin film is processed by using ultraviolet light with particular wavelength in a particular environment, and the graphene in a specified region is removed. The method is suitably used for a removing or patterning process of a single-layer or multi-layer graphene thin film. The method has the advantages that: 1, the graphene thin film is processed by using the ultraviolet light with the particular wavelength in the particular environment, and compared with a traditional process, the method is simple and is high in efficiency and low in cost; 2, the fabrication of a high-accuracy graphene pattern can be achieved, a mask which can be selected and used is wide in range, a low-cost mask can be achieved, and the method is suitably used for processing and application of the graphene thin film in different fields and different industries; and 3, the processing method adopted by the method is easily applied to industrial production at a large scale.

Description

technical field [0001] The invention relates to the field of chemical material production, in particular to a method for removing graphene. Background technique [0002] Graphene thin films have received a lot of attention from academia and industry, and have already had preliminary industrial applications. During the processing and production of graphene film-related products, it is inevitable that there will be a demand for graphene film patterning, or in some cases, the need for the entire surface of graphene to be removed. According to the existing process, it is mainly removed by plasma etching, laser sweeping and other methods. Plasma etching is divided into plasma etching under vacuum and low pressure environment, and plasma etching under normal pressure. Vacuum or low pressure environment has higher requirements on equipment, and the parts to be processed need to be placed in the equipment chamber before processing, and the relative cost High, and the process is cu...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/027C01B31/04G03F7/00
CPCH01L21/02G03F7/00H01L21/027
Inventor 王炜谭化兵刘海滨秦喜超
Owner WUXI GRAPHENE FILM