High-speed semiconductor laser with beam diffusion structure
A diffusion structure and laser technology, applied in semiconductor lasers, optical waveguide semiconductor structures, lasers, etc., can solve the problems of burning semiconductor lasers and laser end face damage, and achieve the effects of suppressing diffusion, good mode matching, and reducing optical power density.
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[0024] To achieve the above objective, the present invention provides a high-speed semiconductor laser with a beam diffusion structure on the light-emitting end surface. Specifically, it includes an optical waveguide structure including a lower waveguide layer, a multiple quantum well active layer, and an upper waveguide layer that are sequentially stacked from bottom to top. A grating layer is formed on the upper part. The upper waveguide layer is formed as a convex ridge, and has a beam diffusion structure on one side of the light emitting end surface. The so-called beam diffusion structure means that for a laser with a resonant cavity length of L, the projection of the light entrance surface and the light exit surface on the Bragg grating has two parallel sides, and the sides of the two parallel sides The lengths are not equal, and the length direction of the resonant cavity is perpendicular to the two mutually parallel sides. From the incident surface of the cavity to the...
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