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High-speed semiconductor laser with beam diffusion structure

A diffusion structure and laser technology, applied in semiconductor lasers, optical waveguide semiconductor structures, lasers, etc., can solve the problems of burning semiconductor lasers and laser end face damage, and achieve the effects of suppressing diffusion, good mode matching, and reducing optical power density.

Active Publication Date: 2016-06-29
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
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  • Application Information

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Problems solved by technology

However, increasing the injection current will easily cause irreversible damage to the end face of the laser, or even burn the semiconductor laser

Method used

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  • High-speed semiconductor laser with beam diffusion structure

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Embodiment Construction

[0024] In order to achieve the above object, the present invention provides a high-speed semiconductor laser with a beam diffusion structure on the light emitting end surface. Specifically, it includes an optical waveguide structure, the optical waveguide structure includes a lower waveguide layer, a multi-quantum well active layer and an upper waveguide layer stacked in sequence from bottom to top, and the multi-quantum well active layer in the multi-quantum well active layer A grating layer is formed on the upper part. The upper waveguide layer is formed as a convex ridge, and has a beam diffusing structure on the side of the light-emitting end surface. The so-called beam diffusion structure means that for a laser with a resonant cavity length L, the projection of the light incident surface and the light exit surface on the Bragg grating has two mutually parallel sides, and the sides of the two mutually parallel sides The lengths are not equal, and the length direction of t...

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Abstract

The invention discloses a semiconductor laser, comprising an optical waveguide structure, wherein the optical waveguide structure comprises a lower waveguide layer (2), a MQW (multiple quantum wells) active layer (3) and an upper waveguide layer (5), which are overlapped in sequence from bottom to top; a grating layer (4) is formed at the upper part of the MQW active layer (3); the upper waveguide layer (5), a wrapping layer 6 and a contact layer 7 form a ridge; the ridge is provided with an incident end face and an emergent end face and has a beam diffusion structure at the side of the emergent end face; the beam diffusion structure has a beam diffusion part which is of a shape gradually shrinking from the emergent end face to the inside; the horizontal divergence angle of the beam diffusion part is 5 DEG-20 DEG preferably. The semiconductor laser can restrain the light diffusion in the horizontal direction and improve the quality of a beam so that better mode matching between the beam and optical fibers can be achieved; the output power of the laser can be enhanced and the high-frequency response characteristic of the laser can be improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a high-speed semiconductor laser with a beam diffusion structure on the light-emitting end surface. Background technique [0002] High-speed semiconductor lasers are the core devices of high-speed communication systems. The high-performance transmitter uses a high-power, low-noise DFB laser as a light source, and realizes data loading through direct modulation or external modulation. External modulation technology can achieve a wide modulation frequency range (>75GHz), but there are also some shortcomings, such as large volume, high cost, high driving voltage, and large insertion loss (6-7dB). Directly modulated semiconductor laser superimposes the modulation signal on the DC bias current, which can modulate the amplitude of the laser output optical signal. It is a method to achieve high-efficiency light emission. and other unique advantages. [0003] Dir...

Claims

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Application Information

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IPC IPC(8): H01S5/20
CPCH01S5/2018H01S5/1039H01S5/3434H01S5/124H01S2301/166H01S5/1014H01S5/22H01S5/04254H01S5/026H01S5/028H01S5/10H01S5/1003
Inventor 祝宁华刘建国郭锦锦陈伟
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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