Mode-locked semiconductor laser with stable wavelength

A technology of semiconductors and lasers, applied in the field of semiconductor laser structures, can solve problems such as unstable output light wavelengths, and achieve the effects of simplifying the process flow, improving integration, and reducing errors

Inactive Publication Date: 2016-07-06
BEIJING UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to solve the problem of unstable output light wavelength of general mode-locked semiconductor lasers, the present invention proposes a mode-locked semiconductor laser structure with stable wavelength

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  • Mode-locked semiconductor laser with stable wavelength
  • Mode-locked semiconductor laser with stable wavelength
  • Mode-locked semiconductor laser with stable wavelength

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Embodiment 1

[0019] The chip required for preparing the semiconductor mode-locked laser in the present invention, that is, the epitaxial wafer is grown on the N-type GaAs substrate by the method of low-pressure metal-organic chemical vapor deposition. The semiconductor laser chip, that is, the structure of the epitaxial wafer consists of two InGaAs quantum well active regions and an asymmetric waveguide layer; the double quantum well active region is GaAs / In 0.2 Ga 0.8 As / GaAs / In 0.2 Ga 0.8 As / GaAs structure, the corresponding thicknesses are 18nm / 7nm / 14nm / 7nm / 18nm respectively. The asymmetric waveguide structure leads to lower loss of the N-type doped confinement layer, thereby obtaining higher output power. The asymmetric waveguide structure is made of Al 0.32 Ga 0.68 As lower confinement layer and Al with lower refractive index 0.35 Ga 0.65 As upper limit layer composition.

[0020] The total cavity length of the semiconductor laser chip is 1.5 mm, which includes a saturated abs...

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Abstract

The invention provides a mode-locked semiconductor laser with a stable wavelength, and relates to the technical field of semiconductor optic electronics. The mode-locked semiconductor laser with the stable wavelength comprises a saturated absorption region on the basis of a semiconductor laser chip, a total reflection film, a gain region and an optical grating, wherein the total reflection film is arranged at one side of the saturated absorption region; the optical grating is arranged at the light outlet part of the other side and has a stable wavelength output; and wavelength selection is carried out. The problems of the mode-locked semiconductor laser that wavelength is unstable when light is output, and drift is liable to cause are solved; stabilization of the output wavelength is achieved in multiple wavelength selection processes; the technology is easy to implement; the operation is simple; and the mode-locked semiconductor laser becomes a miniature portable high-efficiency, energy-saving and environment-friendly novel light source.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronics, in particular to a semiconductor laser structure with a stable wavelength mode-locking function. Background technique [0002] A method of fixing the initial phase relationship of each longitudinal mode in a multi-longitudinal mode laser and finally forming a sequence of optical pulses with equal time intervals is mode locking. The longitudinal modes are synchronized and constant in time and frequency interval, so the laser will output ultrashort pulses with narrow pulses and high peak power. It is precisely because semiconductor mode-locked lasers have a series of advantages such as compact structure and high efficiency that the application research of nonlinear imaging in the field of biomedicine has made rapid progress in recent years. However, the output wavelength of the mode-locked laser is not stable. The reason for this phenomenon is that the stimulated emission of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/065
CPCH01S5/0657
Inventor 崔碧峰房天啸郝帅
Owner BEIJING UNIV OF TECH
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