Mode-locked semiconductor laser with stable wavelength
A technology of semiconductors and lasers, applied in the field of semiconductor laser structures, can solve problems such as unstable output light wavelengths, and achieve the effects of simplifying the process flow, improving integration, and reducing errors
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[0019] The chip required for preparing the semiconductor mode-locked laser in the present invention, that is, the epitaxial wafer is grown on the N-type GaAs substrate by the method of low-pressure metal-organic chemical vapor deposition. The semiconductor laser chip, that is, the structure of the epitaxial wafer consists of two InGaAs quantum well active regions and an asymmetric waveguide layer; the double quantum well active region is GaAs / In 0.2 Ga 0.8 As / GaAs / In 0.2 Ga 0.8 As / GaAs structure, the corresponding thicknesses are 18nm / 7nm / 14nm / 7nm / 18nm respectively. The asymmetric waveguide structure leads to lower loss of the N-type doped confinement layer, thereby obtaining higher output power. The asymmetric waveguide structure is made of Al 0.32 Ga 0.68 As lower confinement layer and Al with lower refractive index 0.35 Ga 0.65 As upper limit layer composition.
[0020] The total cavity length of the semiconductor laser chip is 1.5 mm, which includes a saturated abs...
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