Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor sensor and testing circuit of hydrogen sulfide gas

A semiconductor, hydrogen sulfide technology, applied in the direction of material resistance, can solve the problems of environmental temperature sensitivity and unfavorable detectors

Inactive Publication Date: 2016-07-13
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
View PDF4 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Its main disadvantages are: On the one hand, since the metal oxide-based gas sensor is very sensitive to the ambient temperature, this is due to the fact that the carrier concentration generated by the intrinsic excitation of the semiconductor is determined by the ambient temperature
This is also very unfavorable for the practical application of the detector

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor sensor and testing circuit of hydrogen sulfide gas
  • Semiconductor sensor and testing circuit of hydrogen sulfide gas
  • Semiconductor sensor and testing circuit of hydrogen sulfide gas

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Weigh 2.1gNa 2 WO 4 ·H 2 O, add 30ml of distilled water, stir well to make it all dissolve. Then use a peristaltic pump to add an equal volume of 2MH dropwise at a rate of 1 rap / min. 2 SO 4, fully stirred, the solution gradually changed from colorless to golden yellow. Take 15ml of the golden-yellow precursor solution, add it into a 25ml reaction kettle, and conduct a hydrothermal reaction at 180°C for 12 hours. Centrifuge, pour off the supernatant, wash with water and ethanol three times respectively, and finally dry at 60°C to obtain a yellow powder, which is a pure-phase tungsten trioxide cube, see figure 1 .

Embodiment 2

[0035] The specific experimental details of the second step of hydrothermal synthesis of tungsten trioxide nano-square and copper oxide particle heterojunction structure for the preparation of the gas-sensitive material for the hydrogen sulfide gas test sensor in the present invention are as follows:

[0036] Weigh 0.232gWO 3 Nano cubes, evenly dispersed in 50ml ethanol, then add 10ml different concentrations of (CH 3 COO) 2 Cu ethanol solution (0.0025M, 0.005M, 0.01M, 0.02M respectively) was stirred thoroughly to make it evenly mixed. Water heating at 140°C for 4h. Centrifuge, discard the supernatant, wash twice with water and ethanol, and finally dry at 60°C to obtain a yellow to brown powder. Finally, calcined at 500°C for 1 hour, and finally obtained WO whose color gradually transitioned from yellow to dark yellow. 3 / CuO composite structure powder (corresponding to pure molar ratio; 100:2.5; 100:5; 100:10; 100:20), see figure 1 , figure 2 .

Embodiment 3

[0038] The details of the second method of the second hydrothermal synthesis of the heterojunction structure of tungsten trioxide nanocubes and copper oxide particles in the present invention are as follows:

[0039] Weigh 5g (CH 3 COO) 2 Cu was dispersed in 50ml of ethanol, mixed evenly, heated in water at 140°C for 4h, washed, and calcined to obtain CuO particle powder. Weigh 15.8, 7.9, 3.95, 1.975mg CuO powder respectively, and then weigh five parts of 2.1gNa 2 WO 4 ·H 2 O, add 30ml of distilled water respectively, stir well to make it all dissolve. Then use a peristaltic pump to add an equal volume of 2MH dropwise at a rate of 1 rap / min. 2 SO 4 , stir well. Take 15ml of the golden-yellow precursor solution, add it into a 25ml reaction kettle, and conduct a hydrothermal reaction at 180°C for 12 hours.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a semiconductor sensor and a testing circuit of hydrogen sulfide gas.A tungsten trioxide nano material prepared by a chemical method is adopted as a precursor of the semiconductor sensor, and a composite structure of copper oxide nanoparticles is modified on the surface of the precursor.a gas-sensitive element is of a heater-type structure, sensitivity of the semiconductor sensor is 105 at 55 DEG C, and the semiconductor sensor has high selectivity.Through single phase to modulate voltage, response restoration time can be controlled within 65 seconds.The semiconductor sensor has high sensitivity, high selectivity and capability of realizing quick response and restoration at low temperature.

Description

technical field [0001] The invention relates to a semiconductor sensor, in particular to a semiconductor gas sensor highly sensitive to sulfide gas, which has high selectivity to hydrogen sulfide gas, and realizes rapid response-recovery of devices at low temperature. Background technique [0002] Hydrogen sulfide gas, colorless and flammable, has a strong pungent smell of rotten eggs. It is a highly toxic air pollutant. It is commonly found in the oil and gas industry, leather dye chemical industry, sewage treatment, and even food processing. The acceptable concentration for general healthy people is 20-100ppb, and the average allowable concentration limit for 8 hours in the workplace is 10ppm. Exceeding this concentration will generally cause corrosion damage to the eyes, nose and throat, and once it exceeds 250ppm, it will be fatal. The explosive concentration range of hydrogen sulfide is relatively wide, about 4-46%. Hydrogen sulfide Hydrogen sulfide is a chemical neuro...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01N27/04
CPCG01N27/04
Inventor 俞伟伟赵强孙艳陈鑫张天宁戴宁
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com