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Carbon nanotube fabric with multi-scale pore structure and preparation method thereof

A technology of carbon nanotubes and carbon nanotube fibers, which is applied in the field of nanometers, can solve the problems of small specific surface area, poor flexibility, high substrate strength, high flexibility, high conductivity and high specific surface area, and achieve high specific surface area, high flexibility, The effect of high conductivity

Inactive Publication Date: 2016-07-20
DONGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But these wires and carbon fiber fabrics are less flexible than natural fibers or chemical fiber fabrics, and the specific surface area is also smaller than natural fibers or chemical fiber fabrics.
[0004] Therefore, looking at the existing patents and literature reports, there is no substrate with high strength, high flexibility, high conductivity, high specific surface area and good permeability.

Method used

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  • Carbon nanotube fabric with multi-scale pore structure and preparation method thereof
  • Carbon nanotube fabric with multi-scale pore structure and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] A carbon nanotube fabric with a multi-scale hole structure is composed of carbon nanotube yarns, the carbon nanotube yarns are composed of carbon nanotube fibers, and the carbon nanotube fibers are composed of carbon nanotubes. The preparation method is as follows: holes with a diameter of 5-8 nm are formed between the carbon nanotube fibers in the carbon nanotube fiber, and holes with a diameter of 50-100 nm are formed between the carbon nanotube fibers in the carbon nanotube yarn. holes, the carbon nanotube yarns form holes of 5-10 μm.

[0026] (1) Growth of carbon nanotubes by chemical vapor deposition:

[0027] Sequential deposition of Al on silicon substrates by electron beam evaporation process 2 o 3 layer and Fe layer, Al 2 o 3 layer is located between the Si substrate and the Fe layer, the Al 2 o 3 The layer thickness is 5nm, as a buffer layer, and the Fe layer thickness is 1.2nm, as a catalyst; by chemical vapor deposition, ethylene is used as carbon sour...

Embodiment 2

[0035] A carbon nanotube fabric with a multi-scale hole structure is composed of carbon nanotube yarns, the carbon nanotube yarns are composed of carbon nanotube fibers, and the carbon nanotube fibers are composed of carbon nanotubes. The preparation method is as follows: holes with a diameter of 8-10 nm are formed between the carbon nanotubes in the carbon nanotube fiber, and holes with a diameter of 100-200 nm are formed between the carbon nanotube fibers in the carbon nanotube yarn. holes, the holes of 10-20 μm are formed between the carbon nanotube yarns.

[0036] (1) Growth of carbon nanotubes by chemical vapor deposition:

[0037] Sequential deposition of Al on silicon substrates by electron beam evaporation process 2 o 3 layer and Fe layer, Al 2 o 3 layer is located between the Si substrate and the Fe layer, the Al 2 o 3 The layer thickness is 5nm, as a buffer layer, and the Fe layer thickness is 1.2nm, as a catalyst; by chemical vapor deposition, ethylene is used...

Embodiment 3

[0045] A carbon nanotube fabric with a multi-scale hole structure is composed of carbon nanotube yarns, the carbon nanotube yarns are composed of carbon nanotube fibers, and the carbon nanotube fibers are composed of carbon nanotubes. The preparation method is as follows: holes with a diameter of 10-15 nm are formed between the carbon nanotubes in the carbon nanotube fiber, and holes with a diameter of 200-400 nm are formed between the carbon nanotube fibers in the carbon nanotube yarn. holes, the carbon nanotube yarns form holes of 20-40 μm.

[0046] (1) Growth of carbon nanotubes by chemical vapor deposition:

[0047] Sequential deposition of Al on silicon substrates by electron beam evaporation process 2 o 3 layer and Fe layer, Al 2 o 3 layer is located between the Si substrate and the Fe layer, the Al 2 o 3 The layer thickness is 5nm, as a buffer layer, and the Fe layer thickness is 1.2nm, as a catalyst; by chemical vapor deposition, ethylene is used as carbon source...

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Abstract

The invention provides a carbon nanotube fabric with a multi-scale pore structure and a preparation method thereof. The carbon nanotube fabric with the multi-scale pore structure is characterized by consisting of carbon nanotube yarns, wherein each carbon nanotube yarn consists of carbon nanotube fiber; the carbon nanotube fiber consists of carbon nanotubes. The built carbon nanotube fabric has the multi-scale pore structure including several nanometers to tens of nanometers of pores between the carbon nanotubes, tens of nanometers to several hundreds of nanometers of pores between the carbon nanotube fiber and several micrometers to tens of micrometers of pores between the carbon nanotube yarns. The carbon nanotube fabric has the advantages of high strength, high flexibility, high electric conductivity, high specific surface area and good transparency, and is hopeful to be used in the fields of composite materials, flexible electronics and the like, such as flexible energy sources and sensing devices.

Description

technical field [0001] The invention belongs to the field of nanotechnology, and in particular relates to a carbon nanotube fabric with a multi-scale pore structure and a preparation method thereof. Background technique [0002] Flexible electronic devices, such as flexible energy devices, flexible sensor devices, flexible displays, flexible cameras, etc., have broad application prospects in the fields of national defense, military, medical and environmental protection, culture and sports, and have attracted great attention from academia and industry. Just as integrated electronics are built on silicon substrates, flexible electronics need to be built on flexible substrates. The current common practice is to use thin metal or flexible plastic substrates, but these substrates are poorly flexible and cannot withstand torsional deformation, resulting in limited use of the fabricated flexible electronic devices, such as being difficult to wear on the human body. And these subst...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): D03D1/00D03D15/00D04B1/14D01D5/42C23C16/26C23C16/02D03D15/275D03D15/533D03D15/573
CPCC23C16/0272C23C16/26D01D5/426D03D1/0088D03D15/00D04B1/14D10B2101/122
Inventor 翁巍朱美芳杨俊杰成艳华梁云霞许明洁
Owner DONGHUA UNIV
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