Preparation method for bismuth telluride quantum point
A technology of bismuth telluride and quantum dots is applied in the field of preparation of bismuth telluride quantum dots and bismuth telluride quantum dots, which can solve the problems of high cost and complicated process, achieve high yield, good application prospect and simple preparation process Effect
Inactive Publication Date: 2016-08-03
YUNNAN NORMAL UNIV
View PDF6 Cites 12 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, the bismuth telluride currently prepared is mostly nanosheets and nanoparticles, and the process is cumbersome and the cost is high.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0016] Weigh 0.5 g of bismuth telluride powder with a balance, place it in an agate mortar and grind it thoroughly, transfer the ground powder to a beaker, add 50 ml of nitrogen-methylpyrrolidone (NMP), and place it in an ultrasonic instrument for cumulative ultrasonication for 4 hours. After sonication, transfer the suspension to a centrifuge for centrifugation. After centrifugation, the supernatant liquid can be collected to obtain bismuth telluride quantum dots.
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more PUM
Login to view more Abstract
The invention provides a method for preparing bismuth telluride quantum dots by ultrasonic technology, which comprises the steps of: 1) taking a certain amount of solid bismuth telluride powder and fully grinding it in an agate mortar. 2) Add an appropriate amount of nitrogen-methylpyrrolidone (NMP) solution to the ground powder and mix, and place the above-mentioned mixture in an ultrasonic instrument for ultrasonication for a cumulative time of 4 hours. 3) Centrifuge the suspension system after ultrasonication, and collect the supernatant liquid to obtain the bismuth telluride quantum dot solution. The present invention adopts a very simple and low-cost preparation process to successfully obtain bismuth telluride quantum dots. The obtained quantum dots have good dispersion and can fluoresce under the irradiation of ultraviolet lamps. They are expected to be used in thermoelectric power generation, thermoelectric refrigeration and sensors, etc. fields are applied.
Description
technical field [0001] The invention relates to a method for preparing bismuth telluride quantum dots, in particular to a method for preparing bismuth telluride quantum dots with bismuth telluride powder as a raw material and nitrogen methylpyrrolidone (NMP) as a solvent, and adopts an ultrasonic process to prepare quantum dots with uniform size and good dispersibility, and Bismuth telluride quantum dots with fluorescent properties belong to the technical field of nanometer material preparation. Background technique [0002] In recent years, with people's emphasis on global environmental pollution and energy crisis, thermoelectric conversion, as a green energy conversion technology that can convert waste heat and waste heat into electrical energy, has attracted people's attention. Bismuth telluride, as a thermoelectric functional material, not only has good electrical conductivity, high temperature resistance and remarkable topological insulator properties, but also has good...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more Application Information
Patent Timeline
Login to view more Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/04B82Y30/00C09K11/88
Inventor 李学铭唐利斌钱福丽杨培志施光辉鲁朝宇
Owner YUNNAN NORMAL UNIV
Who we serve
- R&D Engineer
- R&D Manager
- IP Professional
Why Eureka
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Social media
Try Eureka
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap