Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Monoclinic-phase BiVO4/GO (graphene oxide)/RGO (reduced graphene oxide) crystal and preparation method thereof

A monoclinic phase, crystal technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve problems such as no reports, no patents and literature reports, and achieve the effect of good ionic conductivity

Active Publication Date: 2016-08-10
SHAANXI UNIV OF SCI & TECH
View PDF9 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] So far, the preparation of monoclinic BiVO by sacrificial template method 4 The work on / GO / RGO crystals has not been reported yet, and there are no patents and literature reports on the preparation of monoclinic BiVO by the sacrificial template method. 4 / GO / RGO Crystal

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Monoclinic-phase BiVO4/GO (graphene oxide)/RGO (reduced graphene oxide) crystal and preparation method thereof
  • Monoclinic-phase BiVO4/GO (graphene oxide)/RGO (reduced graphene oxide) crystal and preparation method thereof
  • Monoclinic-phase BiVO4/GO (graphene oxide)/RGO (reduced graphene oxide) crystal and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Step 1, 1mmoL Bi(NO 3 ) 3 ·5H 2 O dissolved in 9 mL of 1mol / L dilute HNO 3 , stirred for 30 minutes, then added 3 mL of oleic acid, 3 mL of n-heptane and 10 mL of acetone dropwise at a rate of 2 drops / second, stirred for 10 minutes, and then added 5 mL of 10 mol / L NaOH solution at a rate of 2 drops / second to form Precursor solution, the precursor solution was stirred at room temperature for 8h to prepare Bi 2 o 3 Precipitate, wash and dry the precipitate for later use;

[0036] Step 2, 115mL of concentrated H 2 SO 4 Put it in a conical flask, place the conical flask in a low-temperature thermostat, cool down to 0°C and keep the temperature for 35min; Add 5g of graphite, 5g of sodium nitrate and 15g of potassium permanganate in turn, stir at 0°C to obtain a mixed solution; then raise the temperature of the mixed solution to 25°C, stir and keep it warm for 3 hours; then raise the temperature of the mixed solution to 35°C, and continue stirring And keep it warm for...

Embodiment 2

[0044] Step 1, 1mmoL Bi(NO 3 ) 3 ·5H 2 O dissolved in 9 mL of 1mol / L dilute HNO 3 , stirred for 30 minutes, then added 3 mL of oleic acid, 3 mL of n-heptane and 10 mL of acetone dropwise at a rate of 2 drops / second, stirred for 10 minutes, and then added 5 mL of 10 mol / L NaOH solution at a rate of 2 drops / second to form Precursor solution, stirring the precursor solution at room temperature for 8.5h, prepared Bi 2 o 3 Precipitate, wash and dry the precipitate for later use;

[0045] Step 2, 115mL of concentrated H 2 SO 4 Put it in a conical flask, place the conical flask in a low-temperature thermostat, cool down to 0°C and keep the temperature for 35min; Add 5g of graphite, 5g of sodium nitrate and 15g of potassium permanganate in turn, stir at 0°C to obtain a mixed solution; then raise the temperature of the mixed solution to 25°C, stir and keep it warm for 3 hours; then raise the temperature of the mixed solution to 35°C, and continue stirring And keep it warm for o...

Embodiment 3

[0053] Step 1, 1mmoL Bi(NO 3 ) 3 ·5H 2 O dissolved in 9 mL of 1mol / L dilute HNO 3 , stirred for 30 minutes, then added 3 mL of oleic acid, 3 mL of n-heptane and 10 mL of acetone dropwise at a rate of 2 drops / second, stirred for 10 minutes, and then added 5 mL of 10 mol / L NaOH solution at a rate of 2 drops / second to form a precursor solution, the precursor solution was stirred at room temperature for 7.5h to prepare Bi 2 o 3 Precipitate, wash and dry the precipitate for later use;

[0054] Step 2, 115mL of concentrated H 2 SO 4 Put it in a conical flask, place the conical flask in a low-temperature thermostat, cool down to 0°C and keep the temperature for 35min; Add 5g of graphite, 5g of sodium nitrate and 15g of potassium permanganate in turn, stir at 0°C to obtain a mixed solution; then raise the temperature of the mixed solution to 25°C, stir and keep it warm for 3 hours; then raise the temperature of the mixed solution to 35°C, and continue stirring And keep it warm...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Lengthaaaaaaaaaa
Login to View More

Abstract

The invention discloses a monoclinic-phase BiVO4 / GO (graphene oxide) / RGO (reduced graphene oxide) crystal and a preparation method thereof. The preparation method comprises the following steps: by using Bi(NO3)3.5H2O as a Bi source, sequentially adding oleic acid, n-heptane and acetone into the Bi(NO3)3.5H2O, and stirring at low temperature for 6-10 hours to synthesize a fibrous Bi2O3 template; and respectively dissolving the prepared Bi2O3 template and NH4VO3 in ethanol and a water solution, mixing the two solutions, adding the dispersed GO suspension to form a precursor solution, and carrying out hydrothermal reaction on the precursor solution at 180 DEG C to obtain the BiVO4 / GO / RGO crystal. The BiVO4 is the monocline phase; the space structure group is I2 / a(15); and as the hydrothermal time is prolonged, the crystal is developed more completely and has better structural stability. In the hydrothermal reaction process, the GO is partially reduced; and as the time is prolonged, the reduction degree of the GO increased. The method is simple to operate and stable in technique, and is mature and feasible.

Description

technical field [0001] The invention belongs to the field of functional materials and relates to a monoclinic phase BiVO 4 / GO / RGO crystal and its preparation method. Background technique [0002] BiVO 4 It is a non-toxic, chemically and biologically stable semiconductor material with visible light responsiveness. In recent years, it has been gradually used in photocatalytic degradation of organic pollutants, photoelectric sensitivity, photoinduced luminescence etc. Thanks to BiVO 4 The surface has disadvantages such as weak adsorption capacity, easy recombination of photogenerated electrons and holes, and difficult separation. Researchers have done a lot of research work on its modification and surface modification. Common modification methods include doping of metal ions and non-metal ions, noble metal deposition, and composite heterojunction. Among them, the composite heterojunction has been widely studied because it can achieve the purpose of effectively separating ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B7/10C30B29/10
CPCC30B7/10C30B29/10
Inventor 谈国强赵程程夏傲任慧君
Owner SHAANXI UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com