Method for Preparing Dense Diffusion Barrier Layer of Limiting Current Type Oxygen Sensor by Co-infiltration
A limiting current type, oxygen sensor technology, applied in the field of sensors, can solve problems such as unevenness, long cycle time, cumbersome preparation process, etc., and achieve the effects of low thermal expansion difference, short production cycle and high sensitivity
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Embodiment 1
[0026] The method for preparing the dense diffusion barrier layer of the limiting current type oxygen sensor by the co-infiltration method in this embodiment is carried out according to the following steps:
[0027] (1) According to La 0.8 Sr 0.2 Ga 0.83 Mg 0.17 o 2.815 (LSGM) stoichiometric ratio, weighed La 2 o 3 , SrCO 3 , Ga 2 o 3 and MgO, fully ground to a particle size of ≤100 μm and then pressed into tablets, kept at 1000°C for 20 hours, crushed after natural cooling, ground again and pressed into tablets, kept at 1200°C for 20 hours, and then crushed for the third time after natural cooling again. After grinding for the first time, press into tablets and keep warm at 1450°C for 20h;
[0028] (2) The prepared La 0.8 Sr 0.2 Ga 0.83 Mg 0.17 o 2.815 The sheet is placed in the lower part of the forming mold, and the upper part of the forming mold is filled with Fe 2 o 3 The powder is kept under a pressure of 10 MPa for 10 minutes, and then sintered at 1450 °...
Embodiment 2
[0030] The method for preparing the dense diffusion barrier layer of the limiting current type oxygen sensor by the co-infiltration method in this embodiment is carried out according to the following steps:
[0031] (1) According to La 0.8 Sr 0.2 Ga 0.83 Mg 0.17 o 2.815 (LSGM) stoichiometric ratio, weighed La 2 o 3 , SrCO 3 , Ga 2 o 3 and MgO, fully ground to a particle size of ≤100 μm and then pressed into tablets, kept at 1000°C for 20 hours, crushed after natural cooling, ground again and pressed into tablets, kept at 1200°C for 20 hours, and then crushed for the third time after natural cooling again. After grinding for the first time, press into tablets and keep warm at 1450°C for 20h;
[0032] (2) The prepared La 0.8 Sr 0.2 Ga 0.83 Mg 0.17 o 2.815 The sheet is placed in the lower part of the forming mold, and the upper part of the forming mold is filled with Co 3 o 4 The powder was kept under a pressure of 10 MPa for 10 minutes, and then sintered at 1550 ...
Embodiment 3
[0035] The method for preparing the dense diffusion barrier layer of the limiting current type oxygen sensor by the co-infiltration method in this embodiment is carried out according to the following steps:
[0036] (1) According to La 0.8 Sr 0.2 Ga 0.83 Mg 0.17 o 2.815 (LSGM) stoichiometric ratio, weighed La 2 o 3 , SrCO 3 , Ga 2 o 3 and MgO, fully ground to a particle size of ≤100 μm and then pressed into tablets, kept at 1000°C for 20 hours, crushed after natural cooling, ground again and pressed into tablets, kept at 1200°C for 20 hours, and then crushed for the third time after natural cooling again. After grinding for the first time, press into tablets and keep warm at 1450°C for 20h;
[0037] (2) The prepared La 0.8 Sr 0.2 Ga 0.83 Mg 0.17 o 2.815 The sheet is placed in the lower part of the forming mold, and the upper part of the forming mold is filled with NiO powder, held at a pressure of 6 MPa for 8 minutes, and then sintered at 1600 ° C for 30 hours. N...
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